Ternary amorphous oxide semiconductor of In–Ga–O system for three-dimensional integrated device application
In2O3-based oxide semiconductors are potential materials for supporting the development of next-generation integrated devices with low power consumption, such as back-end-of-line-compatible transistors and ferroelectric memories. Currently, these are standard semiconductor materials used in display...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0243670 |
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