An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement
An extraction method to obtain the noise model parameter <inline-formula> <tex-math notation="LaTeX">$T_{\mathrm { d}}$ </tex-math></inline-formula> in deep submicron MOSFETs directly from radio frequency (RF) scattering parameters and noise figure measurements is p...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10663413/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832583203540434944 |
|---|---|
| author | Hanqi Gao Jing Jin Jianjun Zhou |
| author_facet | Hanqi Gao Jing Jin Jianjun Zhou |
| author_sort | Hanqi Gao |
| collection | DOAJ |
| description | An extraction method to obtain the noise model parameter <inline-formula> <tex-math notation="LaTeX">$T_{\mathrm { d}}$ </tex-math></inline-formula> in deep submicron MOSFETs directly from radio frequency (RF) scattering parameters and noise figure measurements is presented. A simplified noise equivalent circuit, along with closed-form solutions to calculate the RF noise figure of MOSFET is developed. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for <inline-formula> <tex-math notation="LaTeX">$16\times 1\times 2{{\mu }\rm m}$ </tex-math></inline-formula> (number of gate fingers <inline-formula> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> unit gatewidth <inline-formula> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> cells) gatelength MOSFETs. |
| format | Article |
| id | doaj-art-02b55cebd8d141a9b12ea111a5698449 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-02b55cebd8d141a9b12ea111a56984492025-01-29T00:00:32ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011269269710.1109/JEDS.2024.345340810663413An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure MeasurementHanqi Gao0https://orcid.org/0009-0006-7921-9655Jing Jin1https://orcid.org/0000-0003-3584-5559Jianjun Zhou2https://orcid.org/0000-0001-9898-7285Center for Analog/RF Integrated Circuits, School of Microelectronics, Shanghai Jiao Tong University, Shanghai, ChinaCenter for Analog/RF Integrated Circuits, School of Microelectronics, Shanghai Jiao Tong University, Shanghai, ChinaCenter for Analog/RF Integrated Circuits, School of Microelectronics, Shanghai Jiao Tong University, Shanghai, ChinaAn extraction method to obtain the noise model parameter <inline-formula> <tex-math notation="LaTeX">$T_{\mathrm { d}}$ </tex-math></inline-formula> in deep submicron MOSFETs directly from radio frequency (RF) scattering parameters and noise figure measurements is presented. A simplified noise equivalent circuit, along with closed-form solutions to calculate the RF noise figure of MOSFET is developed. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for <inline-formula> <tex-math notation="LaTeX">$16\times 1\times 2{{\mu }\rm m}$ </tex-math></inline-formula> (number of gate fingers <inline-formula> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> unit gatewidth <inline-formula> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> cells) gatelength MOSFETs.https://ieeexplore.ieee.org/document/10663413/Equivalent circuitsMOSFETparameter extractionnoise modelsmall signal modelnoise figure measurement |
| spellingShingle | Hanqi Gao Jing Jin Jianjun Zhou An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement IEEE Journal of the Electron Devices Society Equivalent circuits MOSFET parameter extraction noise model small signal model noise figure measurement |
| title | An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement |
| title_full | An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement |
| title_fullStr | An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement |
| title_full_unstemmed | An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement |
| title_short | An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement |
| title_sort | approach to determine noise model parameter for submicron mosfet from rf noise figure measurement |
| topic | Equivalent circuits MOSFET parameter extraction noise model small signal model noise figure measurement |
| url | https://ieeexplore.ieee.org/document/10663413/ |
| work_keys_str_mv | AT hanqigao anapproachtodeterminenoisemodelparameterforsubmicronmosfetfromrfnoisefiguremeasurement AT jingjin anapproachtodeterminenoisemodelparameterforsubmicronmosfetfromrfnoisefiguremeasurement AT jianjunzhou anapproachtodeterminenoisemodelparameterforsubmicronmosfetfromrfnoisefiguremeasurement AT hanqigao approachtodeterminenoisemodelparameterforsubmicronmosfetfromrfnoisefiguremeasurement AT jingjin approachtodeterminenoisemodelparameterforsubmicronmosfetfromrfnoisefiguremeasurement AT jianjunzhou approachtodeterminenoisemodelparameterforsubmicronmosfetfromrfnoisefiguremeasurement |