An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement
An extraction method to obtain the noise model parameter <inline-formula> <tex-math notation="LaTeX">$T_{\mathrm { d}}$ </tex-math></inline-formula> in deep submicron MOSFETs directly from radio frequency (RF) scattering parameters and noise figure measurements is p...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10663413/ |
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