An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement
An extraction method to obtain the noise model parameter <inline-formula> <tex-math notation="LaTeX">$T_{\mathrm { d}}$ </tex-math></inline-formula> in deep submicron MOSFETs directly from radio frequency (RF) scattering parameters and noise figure measurements is p...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10663413/ |
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| Summary: | An extraction method to obtain the noise model parameter <inline-formula> <tex-math notation="LaTeX">$T_{\mathrm { d}}$ </tex-math></inline-formula> in deep submicron MOSFETs directly from radio frequency (RF) scattering parameters and noise figure measurements is presented. A simplified noise equivalent circuit, along with closed-form solutions to calculate the RF noise figure of MOSFET is developed. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for <inline-formula> <tex-math notation="LaTeX">$16\times 1\times 2{{\mu }\rm m}$ </tex-math></inline-formula> (number of gate fingers <inline-formula> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> unit gatewidth <inline-formula> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> cells) gatelength MOSFETs. |
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| ISSN: | 2168-6734 |