Photo-Emf Peculiarities of Ge Nanocluster Structures Formed on Oxidized Si Surface
Ge nanocluster systems on SiOх are paid much interest of scientists today as far as introduction of an insulting SiOх layer can modify essentially the electrical properties of well examined Ge on Si structures making such systems prospective in the view of their possible application to new nanoelec...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Chuiko Institute of Surface Chemistry of NAS of Ukraine
2011-11-01
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| Series: | Хімія, фізика та технологія поверхні |
| Online Access: | https://cpts.com.ua/index.php/cpts/article/view/122 |
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