ASKAP Observations of the Radio Shell in the Composite Supernova Remnant G310.6-1.6 by Wenhui Jing, Jennifer L. West, Xiaohui Sun, Wasim Raja, Xianghua Li, Lingxiao Dang, Ping Zhou, Miroslav D. Filipović, Andrew M. Hopkins, Roland Kothes, Sanja Lazarević, Denis Leahy, Emil Lenc, Yik Ki Ma, Cameron L. Van Eck

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A CNN-LSTM Phase Compensation Method for Unidirectional Two-way Radio Frequency Transmission System by Jiahui Cheng, Zhengkang Wang, Yaojun Qiao, Hao Gao, Chenxia Liu, Zhuoze Zhao, Jie Zhang, Baodong Zhao, Bin Luo, Song Yu

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Deep Searches for Radio Pulsations and Bursts from Four Magnetar and a Magnetar-like Pulsar with FAST by Juntao Bai, Na Wang, Shi Dai, Shuangqiang Wang, Jianping Yuan, Wenming Yan, Lunhua Shang, Xin Xu, Shijun Dang, Zhen Zhang

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A–102-dBm Sensitivity Multichannel Heterodyne Wake-Up Receiver With Integrated ADPLL by Linsheng Zhang, Divya Duvvuri, Suprio Bhattacharya, Anjana Dissanayake, Xinjian Liu, Henry L. Bishop, Yaobin Zhang, Travis N. Blalock, Benton H. Calhoun, Steven M. Bowers

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Bioeffects of EM Radiation on Human Skin Health: A Theoretical SAR Analysis by Rockey Choudhary, Vijay Kumar, Soni Mishra

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Talking to Your Teens About Dating by Kate Fogarty, Donna Davis

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Talking to Your Teens About Dating by Kate Fogarty, Donna Davis

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WALLABY Pilot Survey: Star Formation Enhancement and Suppression in Gas-rich Galaxy Pairs by Qifeng Huang, Jing Wang, Xuchen Lin, Se-Heon Oh, Xinkai Chen, B. Catinella, N. Deg, H. Dénes, B. -Q. For, B. S. Koribalski, K. Lee-Waddell, J. Rhee, A. X. Shen, Li Shao, K. Spekkens, L. Staveley-Smith, T. Westmeier, O. I. Wong, A. Bosma

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Designing a Ring-VCO for RFID Transponders in 0.18 μm CMOS Process by Jubayer Jalil, Mamun Bin Ibne Reaz, Mohammad Arif Sobhan Bhuiyan, Labonnah Farzana Rahman, Tae Gyu Chang

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Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance by Ria Bose, Jatindra Nath Roy

“…A simulation‐based study of these TFET devices has been carried out with the help of 2D TCAD (Technology Computer Aided Design) Sentaurus device simulator for different channel length values in order to validate our proposed mathematical model. The source side n + pocket in the proposed triple metal (TM) TFET device enhances tunnelling probability thus increasing on current and off current is controlled by another n‐pocket near drain side. …”
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