Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS₂ Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments by Khalil Tamersit, Abdellah Kouzou, José Rodriguez, Mohamed Abdelrahem

Subjects: Get full text

AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach by Alberto Gullino, Valerio Torrelli, Martino D'Alessandro, Alberto Tibaldi, Francesco Bertazzi, Michele Goano, Pierluigi Debernardi

“…Our comprehensive VCSEL solver VENUS is augmented with a non-equilibrium Green's function (NEGF) approach to extract the band-to-band tunneling rate across the TJ. …”
Get full text

Rectification properties of gold–alkanedithiol–graphene hybrid junctions: Enhancing performance through molecular engineering by Mohammad Norouzi, Ehsan Rahimi

“…By optimizing the alkanedithiol chain length and the edge configuration of the GNR electrode, we aim to enhance the rectification ratio (RR) and current–voltage (I–V) characteristics. Utilizing density functional tight-binding (DFTB) combined with the non-equilibrium Green’s function (NEGF) method, we analyze the transmission spectra and I–V properties of these hybrid junctions. …”
Get full text