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    Rapid and low‐temperature synthesis of MoAlB MAB phase by using stress‐induced Al‐particles by Maharshi Dey, Quan Tran, Jin Zhang, Godswill Ngige, Sabah Javaid, Michelle Pantoya, Surojit Gupta

    Published 2025-01-01
    “…The stress‐altering of Al particles (i.e., Al [TT‐treated]) was effective in producing >95 wt.% MoAlB after reaction at only 700°C for 10 min, a significant reduction in temperature. …”
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    HARİZMİ’NİN MEFATİHU’L-ULUM’UNDA MANTIK by İbrahim Çapak

    Published 2010-10-01
    Subjects: “…al-khawârizmî…”
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    Virtual choir as a kind of digital musical art by Xinbin Fu

    Published 2024-12-01
    Subjects: “…musical art…”
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    Crystal structure of Al-rich fluorophlogopite, K1.0(Mg2.8Al0.2)(Si2.8Al1.2)O10F2 by Aiqing Chen, Lixue Zhang

    Published 2021-09-01
    “…K1.0(Mg2.8Al0.2)(Si2.8Al1.2)O10F2, monoclinic, C2/m (no. 12), a = 5.3040(11Å, b = 9.2288(18Å, c = 10.1286(20Å, β = 100.173(3)°, V = 488.00(17Å3, Z = 2, Rgt(F) = 0.0387, wRref(F2) = 0.1086, T = 298 K.…”
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    Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics by Liwei Jin, Zhiqun Cheng, Qingna Wang

    Published 2013-01-01
    “…This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructure high-mobility transistors (HEMTs) on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation frequency. …”
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    Artificial intelligence in education: Current challenges by Fabijanić Gagro Sandra

    Published 2024-01-01
    Subjects: “…artificial intelligence (ai)…”
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