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    Existence of Periodic Solutions for Nonlinear Fully Third-Order Differential Equations by Yunfei Zhang, Minghe Pei

    Published 2020-01-01
    “…In this paper, we study the existence of periodic solutions to nonlinear fully third-order differential equation x‴+ft,x,x′,x″=0,t∈ℝ≔−∞,∞, where f:ℝ4⟶ℝ is continuous and T-periodic in t. …”
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    A Bark Thickness Model for White Spruce in Alaska Northern Forests by Thomas Malone, Jingjing Liang

    Published 2009-01-01
    “…Here we developed a simple linear model to estimate white spruce bark thickness in the northern forests of Alaska. Data were collected from six areas throughout interior and southcentral Alaska. …”
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    The Evaluation of Conceptual Learning and Epistemological Beliefs on Physics Learning by Think-Pair-Share by Tolga Gok

    Published 2018-01-01
    “…The purpose of the research was to investigate the effects of think pair share (TPS) instructional strategy on students' conceptual learning and epistemological beliefs on physics and physics learning. …”
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    Characteristics and Risk Factors for Spontaneous Closure of Idiopathic Full-Thickness Macular Hole by Xida Liang, Wu Liu

    Published 2019-01-01
    “…Idiopathic full-thickness macular hole is a severe visual impairment disease. …”
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  14. 554

    High-energy dual-energy computed tomography for the characterization of large and thick objects by Alix Sardet, Daniel Eck, Nicolas Estre, Frédéric Moutet, Emmanuel Payan, Cécilia Tarpau

    Published 2025-02-01
    “…While the second technique is relatively convenient to set-up, it is not completely energy-independent. The third technique has proven rather efficient; however, it raises the question of the choice of material base used for decomposition. …”
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    The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications by Qian Yu, Sheng Wu, Meng Zhang, Ling Yang, Xu Zou, Hao Lu, Chunzhou Shi, Wenze Gao, Mei Wu, Bin Hou, Gang Qiu, Xiaoning He, Xiaohua Ma, Yue Hao

    Published 2024-12-01
    “…In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with different thicknesses of unintentional doping GaN (UID-GaN) channels were compared and discussed. …”
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