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    Relationship between Ce3+ 5d1 level, conduction-band bottom, and shallow electron trap level in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals studied via pump-probe absorption spectroscopy by Mamoru Kitaura, Heishun Zen, Shinta Watanabe, Hirokazu Masai, Kei Kamada, Kyoung-Jin Kim, Akira Yoshikawa, Jumpei Ueda

    Published 2025-02-01
    “…Analysis of the thermally stimulated luminescence (TSL) glow curve determined the trap depth of the electrons in Gd3Al1Ga4O12:Ce. Based on positron annihilation lifetime spectroscopy (PALS), the generation of electron traps was linked to the introduction of vacancy complexes or vacancy aggregates with a negative charge, namely nonstoichiometric compositions. …”
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