A–102-dBm Sensitivity Multichannel Heterodyne Wake-Up Receiver With Integrated ADPLL by Linsheng Zhang, Divya Duvvuri, Suprio Bhattacharya, Anjana Dissanayake, Xinjian Liu, Henry L. Bishop, Yaobin Zhang, Travis N. Blalock, Benton H. Calhoun, Steven M. Bowers

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La “Nuit de la Nation” : culture jeune, rock’n’roll et panique morale dans la France des années 1960 by Florence Tamagne

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Bioeffects of EM Radiation on Human Skin Health: A Theoretical SAR Analysis by Rockey Choudhary, Vijay Kumar, Soni Mishra

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Talking to Your Teens About Dating by Kate Fogarty, Donna Davis

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Talking to Your Teens About Dating by Kate Fogarty, Donna Davis

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Analysis and suggestions on the development of IoT technology by Wenke YU, Yuan CHENG, Fang LI, Qi ZHAO

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Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance by Ria Bose, Jatindra Nath Roy

“…A simulation‐based study of these TFET devices has been carried out with the help of 2D TCAD (Technology Computer Aided Design) Sentaurus device simulator for different channel length values in order to validate our proposed mathematical model. The source side n + pocket in the proposed triple metal (TM) TFET device enhances tunnelling probability thus increasing on current and off current is controlled by another n‐pocket near drain side. …”
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