High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets by Hyun Jung Kim, Yeonjoon Park, Hyung Bin Bae, Sang H. Choi

“…High-quality strain-relaxed SiGe films with a low twin defect density, high electron mobility, and smooth surface are critical for device fabrication to achieve designed performance. …”
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Modeling Reorientation Dynamics of Electrically Assisted Light-Induced Gliding of Nematic Liquid-Crystal Easy Axis by S. V. Pasechnik, A. V. Dubtsov, D. V. Shmeliova, D. A. Semerenko, V. G. Chigrinov, M. A. Sinenko, Alexei D. Kiselev

“…The phenomenological torque balance model previously introduced to describe the electrically assisted light-induced gliding is generalized to study the reorientation dynamics of the nematic liquid crystal easy axis at photoaligned azo-dye films under the combined action of in-plane electric field and reorienting UV light linearly polarized at varying polarization azimuth, φp. …”
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A Comparative Analysis of Asymmetric (BaTiO3) 1−xΛ/(BaZrO3)xΛ Superlattices via X-Ray Diffraction and Raman Spectroscopy by O. A. Maslova, Yu. I. Yuzyuk, S. A. Barannikova

“…The thicknesses of BT (ferroelectric) and BZ (paraelectric) layers were varied so that х ranged from 0 to 1 at a modulation period Λ of about 80 Å. The films were 400 nm thick. The out-of-plane lattice parameters of constituents were assessed using X-ray diffraction. …”
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