New Coefficients of the Minority Carrier Lifetime and Bandgap Narrowing Models in the Transparent Emitter of Thin Film Silicon Solar Cells by M. Benosman, A. Zerga, F. Dujardin, B. Benyoucef, J-P. Charles

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New Coefficients of the Minority Carrier Lifetime and Bandgap Narrowing Models in the Transparent Emitter of Thin Film Silicon Solar Cells by A. Zerga, M. Benosman, F. Dujardin, B. Benyoucef, J-P. Charles

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Comparing silicone-coated self-adhesive absorbent polyurethane films with transparent absorbent films for bilateral hip dressing: a prospective randomized controlled trial by Chirathit Anusitviwat, Varah Yuenyongviwat

“…Abstract Background Silicone-coated self-adhesive absorbent (SSA) and transparent films with absorbent (TFA) dressings are reportedly effective postoperative knee surgery dressings; however, there have been no direct comparative studies on these two innovative dressings over the hip areas. …”
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A Minor Modification of Direct Browplasty Technique in a Patient with Brow Ptosis Secondary to Facial Paralysis: Copy-Paste-Excise and Stitch by Arzu Taskiran Comez, Baran Gencer, Selcuk Kara, Hasan Ali Tufan

“…Purpose. This report aimed to describe a minor modification of the traditional direct browplasty technique that aids in surgical planning for patients with brow ptosis secondary to facial paralysis without changing the shape of the brow. …”
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High-performance hysteresis-free perovskite transistors through anion engineering by Huihui Zhu, Ao Liu, Kyu In Shim, Haksoon Jung, Taoyu Zou, Youjin Reo, Hyunjun Kim, Jeong Woo Han, Yimu Chen, Hye Yong Chu, Jun Hyung Lim, Hyung-Jun Kim, Sai Bai, Yong-Young Noh

“…Abstract Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI3) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm2 V−1 s−1, current on/off ratios exceeding 107, and threshold voltages of 0 V along with high operational stabilities and reproducibilities. …”
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