Showing 321 - 340 results of 1,967 for search 'Lagaan~', query time: 3.36s Refine Results
  1. 321

    Lignans from Patrinia scabiosaefolia improve insulin resistance by activating PI-3K/AKT pathway and promoting GLUT4 expression by Zhenhua Liu, Mengke Wang, Lijun Meng, Yixiao Chen, Qiuyi Wang, Yan Zhang, Xuefeng Xi, Wenyi Kang

    Published 2023-11-01
    “…Based on our ongoing research on chemical constituents and hypoglycemic activity of P. scabiosaefolia, 4 lignan compounds, (+)-isolariciresinol (1), 7R,7'R,8S,8'S-(+)-neo-olivil-4-O-β-D-glucopyranoside (2), 4-O-methylcedrusin (3) and patrinian A (4), were isolated and identified. …”
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    Karakteristik Pasien Tonsilitis Kronis pada Anak di Bagian THT-KL RSUP Dr. M. Djamil Padang Tahun 2013 by Ivan Maulana Fakh, Novialdi ., Elmatris .

    Published 2016-08-01
    “…Populasi adalah data pasien tonsilitis kronis dengan usia <18  tahun yang datang ke bagian poliklinik THT RSUP Dr. M. Djamil Padang sejak Januari sampai Desember 2013. …”
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    Balthasar, Tarkowski i „theatrum mundi” by Grzegorz Nadgrodkiewicz

    Published 2013-12-01
    Subjects: “…Michał Legan…”
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    Psychology : an introduction / by Kagan, Jerome

    Published 1984
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    Book
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    DAGAN: A Domain-Aware Method for Image-to-Image Translations by Xu Yin, Yan Li, Byeong-Seok Shin

    Published 2020-01-01
    “…To tackle this problem, we propose a generative framework DAGAN (Domain-aware Generative Adversarial etwork) that enables domains to learn diverse mapping relationships. …”
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    INVESTIGATION OF POLARIZATION IN HETEROSTRUCTURES WITH THE QUANTUM WELL AlGaN / GaN USING CAPACITANCE-VOLTAGE CHARACTERISTICS by O. A. Ruban, P. P. Maltsev

    Published 2016-10-01
    “…In the present study, the degree of relaxation of tension in the barrier layer of heterostructures AlGaN / GaN on the basis of measurements of the capacitance-voltage characteristics GaNHEMT is determined. …”
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  19. 339

    Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET by Ramnish Kumar, Sandeep K. Arya, Anil Ahlawat

    Published 2014-01-01
    “…A new two-dimensional analytical model for the capacitance-voltage and noise characteristics of a AlGaN/GaN MODFET is developed. The two-dimensional electron gas density is calculated as a function of device dimensions. …”
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