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    SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network by Xiping Niu, Ling Sang, Xiaoling Duan, Shijie Gu, Peng Zhao, Tao Zhu, Kaixuan Xu, Yawei He, Zheyang Li, Jincheng Zhang, Rui Jin

    Published 2024-12-01
    “…However, the static and dynamic characteristics of this device are influenced by a multitude of parameters, and traditional TCAD simulation methods are often characterized by their complexity. …”
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