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Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy
Published 2012-01-01“…Nanowires, with a diameter of 50–300 nm and with a length of up to 10 μm, have been grown along the 〈111〉B or 〈111〉A crystallographic orientation from lithography-defined SiO2 mask openings on a group III-V semiconductor substrate surface. …”
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