Showing 1 - 2 results of 2 for search 'INAS 300', query time: 0.03s Refine Results
  1. 1

    Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy by K. Hiruma, K. Tomioka, P. Mohan, L. Yang, J. Noborisaka, B. Hua, A. Hayashida, S. Fujisawa, S. Hara, J. Motohisa, T. Fukui

    Published 2012-01-01
    “…Nanowires, with a diameter of 50–300 nm and with a length of up to 10 μm, have been grown along the 〈111〉B or 〈111〉A crystallographic orientation from lithography-defined SiO2 mask openings on a group III-V semiconductor substrate surface. …”
    Get full text
    Article
  2. 2