Design of resonant cavity-enhanced InAs/GaSb superlattice LWIR photodetector by Ruixin Gong, Lianqing Zhu, Lidan Lu, Qingsong Feng, Yang Chen, Bingfeng Liu, Yuhao Chen, Yuanbo Zhang, Shiya Zhang, Zhiying Liu

“…Moreover, we have designed a resonant cavity-enhanced “Φ” structure for the 14/7 ML InAs/GaSb SLs infrared detector. …”
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Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy by A. Gilbert, M. Ramonda, G. Patriarche, E. Tournié, J.‐B. Rodriguez

“…APB‐free buffer layers as thin as 215/400 nm have been obtained using the first method, which represents a factor of 2/4 thickness reduction compared to the previous results for both 0.5° and 0.2° miscut angles.…”
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High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design by Juntian Cao, Chengao Yang, Yihang Chen, Hongguang Yu, Jianmei Shi, Haoran Wen, Zhengqi Geng, Zhiyuan Wang, Hao Tan, Yu Zhang, Donghai Wu, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu

Subjects: “…GaSb-based diode lasers…”
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13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD by Richard Brown, Chen Liu, George Seager, Francisco Alvarado, Ka Ming Wong, Adam P. Craig, Richard Beanland, Andrew R. J. Marshall, J. Iwan Davies, Qiang Li

“…At 77 K and −0.1 V, the photodetector showed a dark current density of 2.2 × 10−2 A cm−2 and a 100% cutoff wavelength of 13 µm. …”
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New materials and sensors for semiconductor gas analysis by I. A. Kirovskaya, T. A. Kirovskaya, A. O. Ekkert

“…Using the complex of up-to-date methods, the acid-base and adsorption (with regard to NH3 , NO2 ) properties of binary and multicomponent semiconductors of equitably chosen systems InSb-ZnTe, InSb-CdTe, GaSb-ZnTe, GaSb-CdTe have been studied. …”
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