Ferromagnetic Nickel as a Sustainable Reducing Agent for Tin–Lead Mixed Perovskite in Single‐Junction and Tandem Solar Cells by Doyun Im, Passarut Boonmongkolras, Yeonghun Yun, Sung Woong Yang, Sunwoo Kim, Jungchul Yun, Rajendra Kumar Gunasekaran, You‐Hyun Seo, Nam Joong Jeon, Gill Sang Han, Sangwook Lee

“…The unique bandgap tunability of halide perovskites enables optimal tandem configurations of wide‐bandgap (WBG) and NBG subcells. …”
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Unveiling the nexus between irradiation and phase reconstruction in tin-lead perovskite solar cells by Wenbo Li, Zhe Li, Shun Zhou, Yanzhuo Gou, Guang Li, Jinghao Li, Cheng Wang, Yan Zeng, Jiakai Yan, Yan Li, Wei Dai, Yaoguang Rong, Weijun Ke, Ti Wang, Hongxing Xu

“…Abstract Tin-lead perovskites provide an ideal bandgap for narrow-bandgap perovskites in all-perovskite tandem solar cells, fundamentally improving power conversion efficiency. …”
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Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1−x)O2 during suboxide molecular beam epitaxy by Wenshan Chen, Kingsley Egbo, Joe Kler, Andreas Falkenstein, Jonas Lähnemann, Oliver Bierwagen

“…Rutile GeO2 is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO2 enables bandgap engineering and the formation of heterostructure devices. …”
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Design of Multijunction Photovoltaic Cells Optimized for Varied Atmospheric Conditions by C. Zhang, J. Gwamuri, R. Andrews, J. M. Pearce

“…Indium gallium nitride and other PV materials offer the opportunity for limited bandgap engineering to match spectra. The effects of atmospheric conditions such as aerosols, cloud cover, water vapor, and air mass have been shown to cause variations in spectral radiance that alters PV system performance due to both overrating and underrating. …”
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Vibration Reduction Method for Power Cabin of Torpedoes Based on Acoustic Metamaterials by Xuyang SUN, Jingjun ZHOU, Qian WANG, Zhimin ZHANG

“…Firstly, the vibration response characteristics of the power cabin under axial excitation were analyzed, and a local resonance unit structure of the cantilever beam was designed. The bandgap characteristics and vibration reduction effect of the structure were analyzed. …”
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Electronic Structure and Optical Properties of GaAs Doped with Rare-Earth Elements (Sc, Y, La, Ce, and Pr) by Yongrong Deng, Chunhong Zhang, Xinmao Qin, Wanjun Yan

“…Band structure calculations indicated that the lowest conduction band and highest valence band were evident at the G-point, demonstrating that rare-earth-element doping did not alter the material type of GaAs, which remained a direct-bandgap semiconductor. The bandgap of Sc-doped GaAs increased, whereas those of Y-, La-, Ce-, and Pr-doped GaAs decreased. …”
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Fluorine-expedited nitridation of layered perovskite Sr2TiO4 for visible-light-driven photocatalytic overall water splitting by Jinxing Yu, Jie Huang, Ronghua Li, Yanbo Li, Gang Liu, Xiaoxiang Xu

“…In this work, an F-expedited nitridation strategy is applied to modify the wide-bandgap semiconductor Sr2TiO4 for visible-light-driven photocatalytic overall water splitting. …”
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First-Principles Calculation of Conductivity of Ce-C Codoped SnO2 Contacts by Can Ding, Zhenjiang Gao, Xing Hu, Zhao Yuan

“…When the elements are codoped, the enthalpy change is the largest, and the thermal stability is the best. It has the smallest bandgap, the most impurity energy levels, and the least energy required for electronic transitions. …”
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A Review on Application of Noble Metal-Free Materials/ZrO2 Nano-photocatalysts for Removal of Organic Pollutants and Heavy Metals by Marjan Tanzifi

“…This not only delays the recombination of electron-hole pairs but also reduces the bandgap of the composite, improving light absorption in the visible region in many cases. …”
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Joint intelligent optimization design of the active region and electron blocking layer for AlGaN-based deep ultraviolet LEDs by Jinglei Wang, Huimin Lu, Jianhua Ma, Yifan Zhu, Zihua Zhang, Tongjun Yu, Xuecheng Wei, Hua Yang, Jianping Wang

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Heterobimetallic Zn2+/Co2+ Monocarboxylates as Precursors for ZnO Microparticles Doped with Cobalt and its Photocatalytic Activity in Methyl Orange Oxidation by Hélder Inocêncio Ferreira Correa, Ralf Ricardo Ramalho Jr, Adhimar Flávio Oliveira, Fabio da Silva Lisboa

“…All particles ranged from 0.1 to 0.9 μm size, with a direct bandgap of 2.2 to 2.6 eV and an indirect bandgap of 0.25 to 1.70 eV. …”
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Preparation of Hierarchical Structure Au/ZnO Composite for Enhanced Photocatalytic Performance: Characterization, Effects of Reaction Parameters, and Oxidizing Agent Investigations by Anh-Tuan Vu, Thi Anh Tuyet Pham, Xuan Truong Do, Van Anh Tran, Van Duong Le, Duc Duc Truong, The Huu Nguyen, Minh Viet Nguyen

“…Zinc oxide (ZnO) has been shown as a potential photocatalyst under ultraviolet (UV) light but its catalytic activity has a limitation under visible (Vis) light due to the wide bandgap energy and the rapid recombination of electrons and holes. …”
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Electronic and Optical Properties of Cl-doped CH3NH3SnI3 Perovskite: A DFT Study by Laassouli Abdelmounaim, Moulaoui Lhouceine, Najim Abdelhafid, Archi Marouane, Karouchi Mohamed, Rahmani Khalid, Lachtioui Youssef, Bajjou Omar

“…We explore Cl doping concentrations of 8.33%, 16.66%, and 25%, analyzing the resulting changes in bandgap, density of states, and absorption coefficient. …”
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Investigation of Fe-Doped Graphitic Carbon Nitride-Silver Tungstate as a Ternary Visible Light Active Photocatalyst by Eid H. Alosaimi, Nadia Azeem, Noor Tahir, Asim Jilani, Muhammad Zahid, Salman. S. Alharthi, Javed Iqbal, Muhammad Yaseen, Zulfiqar Ahmad Rehan, Imran Shahid

“…Characterization analysis included SEM analysis, FTIR, XRD, XPS, and UV-Visible techniques to elucidate the morphology and chemical structuring of the as-prepared heterostructure. The bandgap energies were assessed using the Tauc plot. …”
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A Generalized Phase-Shift PWM Extension for Improved Natural and Active Balancing of Flying Capacitor Multilevel Inverters by Georgios Kampitsis, Efstratios I. Batzelis, Antonis Kolokasis, Elison Matioli, Bikash C. Pal

“…The emergence of wide bandgap power devices has brought the attention back to the flying capacitor (FC) multilevel inverters with a large number of stages, in an effort to increase the power density by minimizing the passive components. …”
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Ab Initio Study of Optoelectronic and Magnetic Properties of Ternary Chromium Chalcogenides by Marc Ong, Mahmoud Hammouri, Radi A. Jishi

“…Electronic band structure calculations indicate that these compounds are either metallic or semiconductors with relatively low bandgap energies. The large optical absorption coefficients, predicted by our calculations, suggest that some of these compounds may be useful as light harvesters in solar cells or as infrared detectors.…”
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A Compact Low-Permittivity Dual-Layer EBG Structure for Mutual Coupling Reduction by A. Azarbar, J. Ghalibafan

“…Electromagnetic bandgap (EBG) structures can help in the reduction of mutual coupling by their capabilities of suppressing surface wave's propagation in a specific frequency range. …”
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Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation by Yasuhisa Omura

“…It is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective bandgap. It is shown that its threshold voltage is higher than that of the conventional SOI MOSFET because its local thin Si regions offer an expanded effective band gap. …”
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Prospects of Back Surface Field Effect in Ultra-Thin High-Efficiency CdS/CdTe Solar Cells from Numerical Modeling by Nowshad Amin, M. A. Matin, M. M. Aliyu, M. A. Alghoul, M. R. Karim, K. Sopian

“…The viability of 1 μm CdTe absorber layer together with possible back surface field (BSF) layers to reduce minority carrier recombination loss at the back contact in ultra thin CdS/CdTe cells was investigated. Higher bandgap material like ZnTe and low bandgap materials like Sb2Te3 and As2Te3 as BSF were inserted to reduce the holes barrier height in the proposed ultra thin CdS/CdTe cells. …”
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Different temperatures leakage mechanisms of (Al2O3)x(HfO2)1−x gate Dielectrics deposited by atomic layer deposition by Yifan Jia, Yi Fu, Xiangtai Liu, Zhan Wang, Pengcheng Jiang, Qin Lu, Shaoqing Wang, Yunhe Guan, Lijun Li, Haifeng Chen, Yue Hao

“…The composition and energy band alignments of the films were characterized using X-ray photoelectron spectroscopy (XPS) and ultraviolet (UV) spectrophotometry, showing that introducing Al into HfO2 increases the bandgap, reduces the dielectric constant, and significantly lowers oxygen vacancies. …”
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