Neodymium-doped SnS nanomaterials: ultrasound-assisted synthesis, characterization, and investigation of its physical properties by Mostafa Yousefi, Younes Hanifehpour, Mehdi Abdolmaleki, Negin Rahmani

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Unique Optoelectronic Properties and Applications of Lead‐Free Perovskites and Derivatives by Mingbian Li, Weijun Li, Haotong Wei

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La convention européenne des paysages: quels enseignements pour le Québec? by Gérald Domon, Julie Ruiz

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Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces by Mohamadali Malakoutian, Kelly Woo, Dennis Rich, Ramandeep Mandia, Xiang Zheng, Anna Kasperovich, Devansh Saraswat, Rohith Soman, Youhwan Jo, Thomas Pfeifer, Taesoon Hwang, Henry Aller, Jeongkyu Kim, Junrui Lyu, Janelle Keionna Mabrey, Thomas Andres Rodriguez, James Pomeroy, Patrick E. Hopkins, Samuel Graham, David J. Smith, Subhasish Mitra, Kyeongjae Cho, Martin Kuball, Srabanti Chowdhury

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Low Thermal Resistance of Diamond‐AlGaN Interfaces Achieved Using Carbide Interlayers by Henry T. Aller, Thomas W. Pfeifer, Abdullah Mamun, Kenny Huynh, Marko Tadjer, Tatyana Feygelson, Karl Hobart, Travis Anderson, Bradford Pate, Alan Jacobs, James Spencer Lundh, Mark Goorsky, Asif Khan, Patrick Hopkins, Samuel Graham

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Theoretical study of the Sb-substitution effect on the optoelectronic properties of Cs2AgBiBr6 double perovskite by Lhouceine Moulaoui, Abdelhafid Najim, Marouane Archi, Mohamed Al-Hattab, Omar Bajjou, Anass Bakour, Youssef Lachtioui, Khalid Rahmani, Bouzid Manaut

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Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method by Chengming Wei, Jiabao Liu, Xinru Lan, Cheng Yang, Shuiping Huang, Dongdong Meng, Zhengwei Chen, Hongguang Duan, Xu Wang

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Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communicati... by Gauri Deshpande, J. Ajayan, Sandip Bhattacharya, B. Mounika, Amit Krishna Dwivedi, D. Nirmal

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Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth by Alexander Polyakov, In‐Hwan Lee, Vladimir Nikolaev, Aleksei Pechnikov, Andrew Miakonkikh, Mikhail Scheglov, Eugene Yakimov, Andrei Chikiryaka, Anton Vasilev, Anastasia Kochkova, Ivan Shchemerov, Alexey Chernykh, Stephen Pearton

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2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates by Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson, Md Abdullah-Al Mamun, Abdullah Al Mamun Mazumder, Shubhra S. Pasayat, Asif Khan, Chirag Gupta

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Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility by Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Stéphanie Rennesson, Sebastian Tamariz, Maud Nemoz, Fabrice Semond, Julien Pernot, Farid Medjdoub, Yvon Cordier, Philippe Ferrandis

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Secretory mitophagy: an extracellular vesicle-mediated adaptive mechanism for cancer cell survival under oxidative stress by Purva V. Gade, Angela Victoria Rojas Rivera, Layla Hasanzadah, Sofie Strompf, Thomas Raymond Philipson, Matthew Gadziala, Atharva Tyagi, Arnav Bandam, Rithvik Gabbireddy, Fatah Kashanchi, Amanda Haymond, Lance A. Liotta, Marissa A. Howard

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Optimization Design of Phononic Crystals Based on BPNN-MPA in Applied Mathematical Analysis by Peiyun Ge

“…However, Models 2 and 5 have poor predictive performance for bandgap width due to overfitting during actual training. …”
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Design and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter by Bin Wang, Ziyuan Tang, Yuxiang Song, Lu Liu, Weitao Yang, Longsheng Wu

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Electromagnetic Functions Modulation of Recycled By-Products by Heterodimensional Structure by Ze Nan, Wei Wei, Zhenhua Lin, Ruimei Yuan, Miao Zhang, Jincheng Zhang, Jianyong Ouyang, Jingjing Chang, Hejun Li, Yue Hao

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A PCBM-Modified TiO2 Blocking Layer towards Efficient Perovskite Solar Cells by Gang Lu, Fengqin He, Shangzheng Pang, Haifeng Yang, Dazheng Chen, Jingjing Chang, Zhenhua Lin, Jincheng Zhang, Chunfu Zhang

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An Analytical, Numerical, and Experimental Investigation on Transverse Vibrations of a Finite Locally Resonant Beam by Peng Guo, Qizheng Zhou

“…The numerical and experimental results show that finite locally resonant beams have low-frequency bandgaps like infinite locally resonant beams, and the bandgap position is close to the resonance frequency of resonators. …”
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A review on three‐dimensional graphene: Synthesis, electronic and biotechnology applications‐The Unknown Riddles by Pradheep Thiyagarajan

“…Most of the electronic and solar cell applications require materials with good electronic conductivity, mobility and finite bandgap. Graphene is a zero bandgap material which prevents it from the mainstream applications. …”
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A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission by Hualian Tang, Ailan Tang, Weifeng Liu, Jingxiang Huang, Jianjun Song, Wenjie Sun

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Advancements in eco-friendly lead-free perovskite/Sb2Se3 tandem solar cells: TCAD simulations by Tarek I. Alanazi, Ahmed Shaker, Dalia Selim, Mohamed Okil

“…This paper explores advancements in an eco-friendly tandem solar cell (TSC) that incorporates both lead-free wide bandgap perovskite and narrow bandgap antimony selenide (Sb2Se3), focusing on optimization strategies utilizing TCAD numerical simulations. …”
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