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    Relationship between Ce3+ 5d1 level, conduction-band bottom, and shallow electron trap level in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals studied via pump-probe absorption spectroscopy by Mamoru Kitaura, Heishun Zen, Shinta Watanabe, Hirokazu Masai, Kei Kamada, Kyoung-Jin Kim, Akira Yoshikawa, Jumpei Ueda

    Published 2025-02-01
    “…Through a simple analysis, the excitation spectra of this change determined the energy at the bottom of the conduction band relative to that at the Ce3+ 4f level. The transient response of the IR-absorption change suggested different relaxation processes for excited electrons in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce. …”
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