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    Le camp F de Lautagne à Valence (Drôme) : l’organisation interne et la vie quotidienne dun camp militaire romain au milieu du ier s. av. J.-C. by Magalie Kielb Zaaraoui, Loïc Buffat, Michel Reddé, Yahya Zaaraoui

    Published 2022-12-01
    “…Current consensus attributes the camp’s dating range to the second quarter of the 1st c. BC. The enclosure ditch has been precisely identified over nearly 660 m on its southern side and 460 m on its eastern side. …”
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    Crystal structure of Al-rich fluorophlogopite, K1.0(Mg2.8Al0.2)(Si2.8Al1.2)O10F2 by Aiqing Chen, Lixue Zhang

    Published 2021-09-01
    “…K1.0(Mg2.8Al0.2)(Si2.8Al1.2)O10F2, monoclinic, C2/m (no. 12), a = 5.3040(11Å, b = 9.2288(18Å, c = 10.1286(20Å, β = 100.173(3)°, V = 488.00(17Å3, Z = 2, Rgt(F) = 0.0387, wRref(F2) = 0.1086, T = 298 K.…”
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  14. 974

    Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics by Liwei Jin, Zhiqun Cheng, Qingna Wang

    Published 2013-01-01
    “…This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructure high-mobility transistors (HEMTs) on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation frequency. …”
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