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Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method
Published 2025-02-01Subjects: Get full text
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Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth
Published 2025-01-01Subjects: Get full text
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Design and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter
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Electromagnetic Functions Modulation of Recycled By-Products by Heterodimensional Structure
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A PCBM-Modified TiO2 Blocking Layer towards Efficient Perovskite Solar Cells
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SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network
Published 2024-12-01Get full text
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Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1−x)O2 during suboxide molecular beam epitaxy
Published 2025-01-01“…Rutile GeO2 is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO2 enables bandgap engineering and the formation of heterostructure devices. …”
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Henna (Lawsonia inermis L.) Dye-Sensitized Nanocrystalline Titania Solar Cell
Published 2012-01-01“…The NDSSC acts as a green energy generator in which dyes molecules adsorbed to nanocrystalline layer of wide bandgap semiconductor material harvest photons. In this paper we investigate the structural, optical, electrical, and photovoltaic characterization of two types of natural dyes, namely, the Bahraini Henna and the Yemeni Henna, extracted using the Soxhlet extractor. …”
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Intervalence plasmons in boron-doped diamond
Published 2025-01-01“…Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. …”
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Ultrawide bandgap semiconductor h-BN for direct detection of fast neutrons
Published 2025-01-01“…III-nitride wide bandgap semiconductors have contributed on the grandest scale to many technological advances in lighting, displays, and power electronics. …”
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Solution-Based Ultraviolet Photodiode with ZnO Nanoparticle/Poly(3,4-Ethylenedioxythiophene) Polystyrene Sulfonate Heterojunction and Negative Capacitance
Published 2025-01-01“…The demand for high-performance UV detectors with low cost and easy fabrication drives the development of novel materials and structures such as wide-bandgap semiconductors, polymers, photodiodes, and phototransistors. …”
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