3 kV monolithic bidirectional GaN HEMT on sapphire by Md Tahmidul Alam, Swarnav Mukhopadhyay, Md Mobinul Haque, Shubhra S. Pasayat, Chirag Gupta

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Electronic Properties of Ultra‐Wide Bandgap BxAl1−xN Computed from First‐Principles Simulations by Cody L. Milne, Tathagata Biswas, Arunima K. Singh

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Reliability Test on Vienna Rectifier for Wide Bandgap Devices in EV Charging Systems by Bharaneedharan Balasundaram, P. Suresh, Parvathy Rajendran, It Ee Lee, C. Ahamed Saleel

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Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces by Mohamadali Malakoutian, Kelly Woo, Dennis Rich, Ramandeep Mandia, Xiang Zheng, Anna Kasperovich, Devansh Saraswat, Rohith Soman, Youhwan Jo, Thomas Pfeifer, Taesoon Hwang, Henry Aller, Jeongkyu Kim, Junrui Lyu, Janelle Keionna Mabrey, Thomas Andres Rodriguez, James Pomeroy, Patrick E. Hopkins, Samuel Graham, David J. Smith, Subhasish Mitra, Kyeongjae Cho, Martin Kuball, Srabanti Chowdhury

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Low Thermal Resistance of Diamond‐AlGaN Interfaces Achieved Using Carbide Interlayers by Henry T. Aller, Thomas W. Pfeifer, Abdullah Mamun, Kenny Huynh, Marko Tadjer, Tatyana Feygelson, Karl Hobart, Travis Anderson, Bradford Pate, Alan Jacobs, James Spencer Lundh, Mark Goorsky, Asif Khan, Patrick Hopkins, Samuel Graham

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Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method by Chengming Wei, Jiabao Liu, Xinru Lan, Cheng Yang, Shuiping Huang, Dongdong Meng, Zhengwei Chen, Hongguang Duan, Xu Wang

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Defect Density-Dependent Dynamics of Double Absorber Layered Perovskite Solar Cell by Lakshmi Prasanna J, Ekta Goel, Amarjit Kumar

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Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communicati... by Gauri Deshpande, J. Ajayan, Sandip Bhattacharya, B. Mounika, Amit Krishna Dwivedi, D. Nirmal

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Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices by Yunwei Ma, Yuan Qin, Matthew Porter, Joseph Spencer, Zhonghao Du, Ming Xiao, Boyan Wang, Yifan Wang, Alan G. Jacobs, Han Wang, Marko Tadjer, Yuhao Zhang

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Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts by Brianna Klein, Andrew Allerman, Andrew Armstrong, Mary Rosprim, Colin Tyznik, Yinxuan Zhu, Chandan Joishi, Chris Chae, Siddharth Rajan

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Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth by Alexander Polyakov, In‐Hwan Lee, Vladimir Nikolaev, Aleksei Pechnikov, Andrew Miakonkikh, Mikhail Scheglov, Eugene Yakimov, Andrei Chikiryaka, Anton Vasilev, Anastasia Kochkova, Ivan Shchemerov, Alexey Chernykh, Stephen Pearton

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Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors by Xian‐Hu Zha, Yu‐Xi Wan, Shuang Li, Dao Hua Zhang

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