A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation by Minxi Cai, Wei Zhong, Bei Liu, Piaorong Xu, Jing Cao

Subjects: “…Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs)…”
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Comprehensive survey of ternary full adders: Statistics, corrections, and assessments by Sarina Nemati, Mostafa Haghi Kashani, Reza Faghih Mirzaee

Subjects: “…carbon nanotube field effect transistors…”
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Self-Assembled Multilayer Single-Walled Carbon Nanotube Thin Film Transistors and Doping Regulation by Xiangxiang Gao, Zhenhua Lin, Jincheng Zhang, Yue Hao, Jingjing Chang

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Performance analysis of high‐power three‐phase current source inverters in photovoltaic applications by Payam Alemi, Jiacheng Wang, Jianwen Zhang, Sahar Amini

Subjects: “…insulated gate bipolar transistors…”
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X-Ray Performance of SiC NPN Radiation Detector by Jing Wang, Leidang Zhou, Liang Chen, Silong Zhang, Fangbao Wang, Tingting Fan, Zhuo Chen, Song Bai, Xiaoping Ouyang

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New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature by Y. Amhouche, A. El Abbassi, K. Raïs, E. Bendada, R. Rmaily

Subjects: “…MOS transistor…”
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Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors by Wenyang Zhang, Li Lu, Chenfei Li, Weijie Jiang, Wenzhao Wang, Xingqiang Liu, Ablat Abliz, Da Wan

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Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors by A. El Abbassi, Y. Amhouche, E. Bendada, R. Rmaily, K. Raïs

Subjects: “…MOS Transistor…”
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Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS₂ Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments by Khalil Tamersit, Abdellah Kouzou, José Rodriguez, Mohamed Abdelrahem

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Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique by Toufik Bentrcia, Fayçal Djeffal, Elasaad Chebaki

Subjects: “…double-gate metal oxide silicon field effect transistors…”
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A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs by Fanzhao Meng, Yi Li, Jun Li, Jie Liang, Jianhua Zhang

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500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit by Nesa Abedi Rik, Ali. A. Orouji, Dariush Madadi

Subjects: “…Field Effect Transistor…”
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A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States by Andreas Fuchsberger, Lukas Wind, Daniele Nazzari, Larissa Kuhberger, Daniel Popp, Johannes Aberl, Enrique Prado Navarrete, Moritz Brehm, Lilian Vogl, Peter Schweizer, Sebastian Lellig, Xavier Maeder, Masiar Sistani, Walter M. Weber

Subjects: “…reconfigurable field-effect transistor…”
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An electrolyte-gated transistor for the monitoring of a CRISPR/Cas activity by Pierre Guermonprez, Le Tu Anh, Louis Renaud, Pierre Nioche, Eric Krejci, Aurélie Alleaume-Butaux, Nicolas Battaglini, Vu Thi Thu, Sébastien Sanaur, Benoît Piro

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Range Extension of Borehole Strainmeters Using MOSFET-Based Multi-Switch Automatic Zero Setting by Chen Yang, Zheng Chen, Hong Li, Wenbo Wang, Weiwei Zhan, Liheng Wu, Yunkai Dong, Jiaxin Chen

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Degradation of VDMOSFET by Heavy Ion Irradiations by C. Salame, F. Pelanchon, P. Mialhe

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Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics by Yansong Lu, Yijun Ding, Jia Li, Hao Yin, Xinlian Li, Chong Zhu, Xi Zhang

Subjects: “…metal oxide semiconductor field-effect transistors (MOSFETs)…”
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Study of GaN Hall Effect Magnetic Sensors by Vlad Marsic, Soroush Faramehr, Isha Maini, David A. J. Moran, Petar Igic

Subjects: “…GaN transistor…”
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Dynamics of Charge Transients in High Voltage Silicon and SiC NPN BJT Under High Injection Levels by Mana Hosseinzadehlish, Saeed Jahdi, Konstantinos Floros, Ingo Ludtke, Xibo Yuan

Subjects: “…Bipolar junction transistor…”
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