Thin Film Transistors and Thin Film Transistor Circuits by Andre Van Calster

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The effect of energy band gap of channel transistor region on npn transistor performance; a numerical study by Mohammad Kamali Moghaddam, Ehsan Koushki

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Technology and Modeling of Nonclassical Transistor Devices by George V. Angelov, Dimitar N. Nikolov, Marin H. Hristov

“…In view of that, compact modeling of bulk CMOS transistors and multiple-gate transistors are considered as well as BSIM and PSP multiple-gate models, FD-SOI MOSFETs, CNTFET, and SET modeling are reviewed.…”
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Modeling of Transistor's Tracking Behavior in Compact Models by Ning Lu

“…We present a novel method to model the tracking behavior of semiconductor transistors undergoing across-chip variations in a compact Monte Carlo model for SPICE simulations and show an enablement of simultaneous 𝑁(𝑁−1)/2 tracking relations among 𝑁 transistors on a chip at any poly density, any gate pitch, and any physical location for the first time. …”
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Design Optimization of Transistors Used for Neural Recording by Eric Basham, David Parent

“…Neurons cultured directly over open-gate field-effect transistors result in a hybrid device, the neuron-FET. …”
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Canonization of graphs during transistor circuits decompilation by D. I. Cheremisinov, L. D. Cheremisinova

Subjects: “…transistor subcircuit extraction…”
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Using the Transversal Admittance to Understand Organic Electrochemical Transistors by Juan Bisquert, Scott T. Keene

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Analysis and Verilog-A Modeling of Floating-Gate Transistors by Sayma Nowshin Chowdhury, Matthew Chen, Sahil Shah

Subjects: “…Floating-gate transistors…”
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Analysis and Simulation of Functional Stress Degradation on VDOMS Power Transistors by M. Zoaeter, B. Beydoun, M. Hajjar, M. Debs, J-P Charles

“…The use of VDMOS transistor under certain functional stress conditions produces a modification of its physical and electrical properties. …”
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Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors by Snežana Djorić-Veljković, Emilija Živanović, Vojkan Davidović, Sandra Veljković, Nikola Mitrović, Goran Ristić, Albena Paskaleva, Dencho Spassov, Danijel Danković

“…This study investigates the effects of negative bias temperature (NBT) stress and irradiation on the threshold voltage (<i>V</i>_T) of p-channel VDMOS transistors, focusing on degradation, recovery after each type of stress, and operational behavior under varying conditions. …”
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High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors by Jiankun Xiao, Xiong Xiong, Xinhang Shi, Shiyuan Liu, Shenwu Zhu, Yue Zhang, Ru Huang, Yanqing Wu

“…Edge contact is essential for achieving the ultimate device pitch scaling of stacked nanosheet transistors with monolayer 2-dimensional (2D) channels. …”
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Surface Recombination Via Interface Defects in Field Effect Transistors by E. Bendada, K. Raïs, P. Mialhe, J. P. Charles

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An electrolyte-gated transistor for the monitoring of a CRISPR/Cas activity by Pierre Guermonprez, Le Tu Anh, Louis Renaud, Pierre Nioche, Eric Krejci, Aurélie Alleaume-Butaux, Nicolas Battaglini, Vu Thi Thu, Sébastien Sanaur, Benoît Piro

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Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor by Su Yeon Jung, Hyunwoo Kim, Jongmin Lee, Jang Hyun Kim

Subjects: “…Ferroelectric field-effect transistor (FeFET)…”
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Unusual Operation of the Junction Transistor Based on Dynamical Behavior of Impurities by Roberto Baca Arroyo

“…The dynamical behavior of impurities into the silicon junction transistor has been studied using an empirical methodology to investigate its behavior knowing only the physical parameters of materials together with practical behavior of their passive components. …”
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Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors by M. Rahmoun, E. Bendada, A. El Hassani, K. Raïs

“…A method for device characterization is experimented to qualify the relaxable damage in hot-carrier stressing of n-MOS transistors. The degradation of physical parameters of the body-drain junction of power HEXFETs is presented for applied stress condition Vg= Vd/2. …”
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Composite Right- and Left-Handed Traveling-Wave Field-Effect Transistors by Koichi Narahara

“…We introduce a composite right- and left-handed travelling-wave field-effect transistor (CRLH TWFET) for developing large-scale platform to support left-handed waves. …”
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Low-power edge detection based on ferroelectric field-effect transistor by Jiajia Chen, Jiacheng Xu, Jiani Gu, Bowen Chen, Hongrui Zhang, Haoji Qian, Huan Liu, Rongzong Shen, Gaobo Lin, Xiao Yu, Miaomiao Zhang, Yi’an Ding, Yan Liu, Jianshi Tang, Huaqiang Wu, Chengji Jin, Genquan Han

“…Here, we report a low-power edge detection hardware system based on HfO2-based ferroelectric field-effect transistor, which is one of the most potential non-volatile memories for energy-efficient computing. …”
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High Speed Non-Linear Circuit Simulation of Bipolar Junction Transistors by M. N. Doja, Moinuddin, Umesh Kumar

“…This paper presents HIBTRA (High Speed Bipolar Transistor Analysis), a high speed non-linear bipolar transistor circuit simulation package. …”
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