Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs by Danqiong Hou, Griff L. Bilbro, Robert J. Trew

“…We have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model suitable for use in commercial harmonic-balance microwave circuit simulators. …”
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Temperature dependence of analogue/RF performance, linearity and harmonic distortion for dual‐material gate‐oxide‐stack double‐gate TFET by Satyendra Kumar

“…Abstract This article presents an investigation report of the effects of temperature variation in the range of 300 to 480 K on electrical performance parameters of conventional dual‐material double‐gate tunnel field effect transistor (DMDG‐TFET) and dual‐material gate‐oxide‐stack double‐gate tunnel field effect transistor (DMGOSDG‐TFET). …”
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Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S₂₂ and h₂₁: An Effective Machine Learning Approach by Zegen Zhu, Gianni Bosi, Antonio Raffo, Giovanni Crupi, Jialin Cai

“…It is worth noticing that the proposed transistor model shows also good performance in both interpolation and extrapolation test.…”
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Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices by T. D. Subash, T. Gnanasekaran, C. Divya, J. Jagannathan

“…The InSb is a material which is used to design the transistor. For designing purpose the simulator TCAD is used, by which the HEMT device is structured and its performance is analyzed and it is found that transistor operates as normal devices. …”
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Very Compact and Broadband Active Antenna for VHF Band Applications by Y. Taachouche, F. Colombel, M. Himdi

“…An active receiving antenna with small size consisting of a monopole loaded with a transistor bipolar is presented in this paper. A transistor is used in order to miniaturize the receiving active antenna size in VHF band. …”
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New Low-Power Tristate Circuits in Positive Feedback Source-Coupled Logic by Kirti Gupta, Ranjana Sridhar, Jaya Chaudhary, Neeta Pandey, Maneesha Gupta

“…The first one is a switch-based technique while the second is based on the concept of sleep transistor. Different tristate circuits based on both techniques have been developed and simulated using 0.18 μm CMOS technology parameters. …”
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From Coherent States in Adjacent Graphene Layers toward Low-Power Logic Circuits by Leonard F. Register, Dipanjan Basu, Dharmendar Reddy

“…Colleagues and we recently proposed a new type of transistor, a Bilayer PseudoSpin Field Effect Transistor (BiSFET), based on many-body coherent states in coupled electron and hole layers in graphene. …”
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A New Type of Tri-Input TFET with T-Shaped Channel Structure Exhibiting Three-Input Majority Logic Behavior by Ye Hao, Jiang Zhidi, Hu Jianping

“…In this paper, we propose a new type of tri-input tunneling field-effect transistor (Ti-TFET) that can compactly realize the “Majority-Not” logic function with a single transistor. …”
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A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics by Eugeny A. Ryndin, Amgad A. Al-Saman, Boris G. Konoplev

“…A quasi-two-dimensional physics-based model of HEMT transistor without using any smoothing functions for joining the linear and saturation regions of current-voltage (I-V) characteristics was developed. …”
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Single-Event-Upset Sensitivity Analysis on Low-Swing Drivers by Nor Muzlifah Mahyuddin, Gordon Russell

“…Subsequently, other alternatives are considered. The impact of transistor sizes and temperature on SEU tolerance is tested. …”
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Model-Based Variation-Aware Optimization for Offset Calibration and Pre-Sensing in DRAM Sense Amplifiers by Dongyeong Kim, Geon Kim, Suyeon Kim, Jewon Park, Sinwook Kim, Hyeona Seo, Chaehyuk Lim, Sowon Kim, Juwon Lee, Jeonghyeon Yun, Hyerin Lee, Jinseok Park, Yongbok Lee, Seungchan Lee, Myoungjin Lee

“…In particular, threshold voltage mismatch caused by reduced transistor sizes introduces sensing offsets, further degrading the already limited sensing margins under low-voltage conditions. …”
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An Experiment and Detection Scheme for Cavity-Based Light Cold Dark Matter Particle Searches by Masroor H. S. Bukhari, Zahoor H. Shah

“…The scheme is based on our idea of a resonant detector, incorporating an integrated tunnel diode (TD) and GaAs HEMT/HFET (High-Electron Mobility Transistor/Heterogeneous FET) transistor amplifier, weakly coupled to a cavity in a strong transverse magnetic field. …”
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PULSE WIDTH MODULATION TECHNIQUE FOR THE SPEED CONTROL OF M-PHASE AC MOTORS by EGWAILE JOEL OSARUMWENSE, ORIAHI MATTHEW

“…At first a thyristor is configured as a PNP-type power transistor latch with two ordinary NPN bipolar switching transistors. …”
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Materials and devices for high‐density, high‐throughput micro‐electrocorticography arrays by Yang Xie, Yanxiu Peng, Jinhong Guo, Muyang Liu, Bozhen Zhang, Lan Yin, He Ding, Xing Sheng

“…Furthermore, recent findings highlight the need for further research and development in active transistor arrays, including silicon, metal oxide, and solution-gated transistors. …”
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New Results on the Noise Figure of HEMTs by M. A. Grado Caffaro, M. Grado Caffaro

“…In this communication, an accurate mathematical model for the noise figure of a high electron mobility transistor is developed. This model represents a substantial improvement of the Fukui model. …”
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A Novel Algorithm for Aspect Ratio Estimation in SRAM Design to Achieve High SNM, High Speed, and Low Leakage Power by Sanket M. Mantrashetti, Arunkumar P Chavan, Prakash Pawar, H. V. Ravish Aradhya, Omkar S. Powar

“…This paper introduces a novel algorithm for optimizing transistor sizing in static random-access memory (SRAM) to enhance speed, improve Static Noise Margin (SNM), and reduce leakage power consumption. …”
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Ternary Toward Binary: Circuit-Level Implementation of Ternary Logic Using Depletion-Mode and Conventional MOSFETs by Hyundong Lee, Seonghoon Kim, Jongbeom Kim, Jaehoon Jeong, Jeonggyu Yang, Taigon Song

“…Therefore, this paper presents a methodology for designing ternary logic based on Depletion-mode metal-oxide-semiconductor field-effect transistor (DEPFET) and multi-threshold voltage complementary metal-oxide–semiconductor (MTCMOS). …”
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Extraction of RDS(ON) of n-Channel Power MOSFET by Numerical Simulation Model by C. -T. Salame

“…The IDS=f(VDS) electrical characteristics measurements for the transistor and the Body-Drain junction are realized for the experimental determination and the extraction (by numerical analysis) of RDS(ON), respectively. …”
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Tunable First-Order Resistorless All-Pass Filter with Low Output Impedance by Parveen Beg

“…The filter is thus realized with the help of a DD-DXCCII, a capacitor, and a MOS transistor. By exploiting the low output impedance, a higher order filter is also realized. …”
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AN OVERVIEW OF NANOELECTRONICS AND NANODEVICES by OYUBU AKPOVI OYUBU, OKPEKI UFUOMA KAZEEM

“…As the name suggests, Nanoelectronics refers to employing nanotechnology in building electronic devices/components; especially transistors. Thus, transistor devices which are so small such that inter-atomic cooperation and quantum mechanical characteristics cannot be ignored are known as Nanoelectronics. …”
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