The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications by Qian Yu, Sheng Wu, Meng Zhang, Ling Yang, Xu Zou, Hao Lu, Chunzhou Shi, Wenze Gao, Mei Wu, Bin Hou, Gang Qiu, Xiaoning He, Xiaohua Ma, Yue Hao

Subjects: “…high electron mobility transistors…”
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Non Quasi-Static Model of DG Junctionless FETs by Mohammad Bavir, Abdollah Abbasi, Ali Asghar Orouji, Farzan Jazaeri, Jean-Michel Sallese

Subjects: “…Double-gate field-effect transistors…”
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Real-time simulation comparison of the impact of inertia on grid following and grid forming inverter IGBT lifetime by Sunjoh Christian Verbe, Keigo Higashiura, Md. Amit Hasan, Ryuto Shigenobu, Akiko Takahashi, Masakazu Ito, Hisao Taoka

Subjects: “…Insulated gate bipolar transistor (IGBT)…”
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A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation by Minxi Cai, Wei Zhong, Bei Liu, Piaorong Xu, Jing Cao

Subjects: “…Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs)…”
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Partially Isolated Dual Work Function Gate IGZO TFT With Obviously Reduced Leakage Current for 3D DRAMs by Yunjiao Bao, Gangping Yan, Lei Cao, Chuqiao Niu, Qingkun Li, Guanqiao Sang, Lianlian Li, Yanzhao Wei, Xuexiang Zhang, Jie Luo, Yanyu Yang, Gaobo Xu, Huaxiang Yin

Subjects: “…In-Ga-Zn-O (IGZO) thin-fifilm transistor (TFT)…”
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Comprehensive survey of ternary full adders: Statistics, corrections, and assessments by Sarina Nemati, Mostafa Haghi Kashani, Reza Faghih Mirzaee

Subjects: “…carbon nanotube field effect transistors…”
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Performance analysis of high‐power three‐phase current source inverters in photovoltaic applications by Payam Alemi, Jiacheng Wang, Jianwen Zhang, Sahar Amini

Subjects: “…insulated gate bipolar transistors…”
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Novel Trade-offs in 5 nm FinFET SRAM Arrays at Extremely Low Temperatures by Shivendra Singh Parihar, Girish Pahwa, Baker Mohammad, Yogesh Singh Chauhan, Hussam Amrouch

Subjects: “…5 nm fin field-effect transistor (FinFET)…”
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A low-power metal–oxide scan driver circuit outputting non-overlapping pulses with DC power-supplied buffer by HyeongMin Kim, JungSuk Oh, YiKyoung You, SangWoon Lee, KeeChan Park

Subjects: “…double-gate (DG) metal-oxide (MOx) thin-film transistor (TFT)…”
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Energy-Accuracy Trade-Offs for Resistive In-Memory Computing Architectures by Saion K. Roy, Naresh R. Shanbhag

Subjects: “…ferroelectric field effect transistor (FeFET)…”
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A High-Efficiency Charge-Domain Compute-in-Memory 1F1C Macro Using 2-bit FeFET Cells for DNN Processing by Nellie Laleni, Franz Muller, Gonzalo Cunarro, Thomas Kampfe, Taekwang Jang

Subjects: “…ferroelectric field-effect transistor (FeFET)…”
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Electric Field Cycling of Physisorbed Antibodies Reduces Biolayer Polarization Dispersion by Cinzia Di Franco, Eleonora Macchia, Michele Catacchio, Mariapia Caputo, Cecilia Scandurra, Lucia Sarcina, Paolo Bollella, Angelo Tricase, Massimo Innocenti, Riccardo Funari, Matteo Piscitelli, Gaetano Scamarcio, Luisa Torsi

Subjects: “…electrolyte‐gated‐organic field‐effect‐transistors(EGOFETs)…”
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Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique by Toufik Bentrcia, Fayçal Djeffal, Elasaad Chebaki

Subjects: “…double-gate metal oxide silicon field effect transistors…”
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A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs by Fanzhao Meng, Yi Li, Jun Li, Jie Liang, Jianhua Zhang

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Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics by Yansong Lu, Yijun Ding, Jia Li, Hao Yin, Xinlian Li, Chong Zhu, Xi Zhang

Subjects: “…metal oxide semiconductor field-effect transistors (MOSFETs)…”
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Active Components Based on Dynamic Negatrons by Pavlo Molchanov, Arun K. Mishra, Helen Linnik, Pavlo Mulyar

“…The active elements based on dynamic transistor negatrons (circuits with negative active differential resistance) are introduced. …”
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Design of a Cell Phone Detector. by Atuheire, Gift

“…It does this by detecting the signal produced by the cellphone and this causes the LED to blink and buzzer to sound. A BFN38 transistor is the major component incorporated within this project as an RF transistor that can amplify the low Radio frequencies hence the increase on the range compared to the other project circuits without any RF transistor…”
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A Nanotechnology Enhancement to Moore's Law by Jerry Wu, Yin-Lin Shen, Kitt Reinhardt, Harold Szu, Boqun Dong

“…Intel Moore observed an exponential doubling in the number of transistors in every 18 months through the size reduction of transistor components since 1965. …”
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Design of low voltage ring oscillator by JIANG Jin-guang, LI Tian-wang

“…A new ring oscillator was proposed.To reduce the threshold voltage of PMOS transistor,a two stage ring oscillator was designed by forward biasing the bulk of the PMOS transistor.Simulation results show that the new ring oscillator can work at the very high frequency with a low supply voltage,and the output frequency of the proposed ring oscillator can range from 300MHz to 4GHz in 1V supply voltage.…”
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Noise tolerant and power optimized ternary combinational circuits for arithmetic logic unit by Katyayani Chauhan, Deepika Bansal

“…These designs aim to reduce the power consumption and minimize the transistor counts while maintaining low noise sensitivity. …”
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