Junction Parameter Extraction for Electronic Device Characterization by S. Dib, C. Salame, N. Toufik, A. Khoury, F. Pélanchon, P. Mialhe

“…An application, achieved to observe the degradation of the emitter–base junction of a bipolar transistor during an aging experiment, shows that the evolutions of the single exponential model parameters versus time introduce a means for degradation quantification.…”
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Frequency-Based Control Strategy for Compact Electromagnetic Tuned Mass Damper by Semen Kopylov, Zhaobo Chen, Mohamed A. A. Abdelkareem

“…The concept of a controllable system with switched transistor was utilized for the proposed control strategy. …”
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Radiation Characteristics of 3D Resonant Cavity Antenna with Grid-Oscillator Integrated Inside by L. A. Haralambiev, H. D. Hristov

“…A three-dimensional (3D) rectangular cavity antenna with an aperture size of 80 mm × 80 mm and a length of 16 mm, integrated with a four-MESFET transistor grid-oscillator, is designed and studied experimentally. …”
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An Efficient Approximate Multiplier with Encoded Partial Products and Inexact Counter for Joint Photographic Experts Group Compression by Elham Esmaeili, Nabiollah Shiri

“…The counter and PPG make a new radix-4-based 8 × 8 Booth multiplier, which is synthesized targeting a 32-nm carbon nanotube field-effect transistor (CNTFET) technology to determine the hardware characteristics. …”
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Ultrawideband LNA 1960–2019: Review by Shahab Shahrabadi

“…Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High‐Electron‐Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic.…”
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Drive Current Enhancement in TFET by Dual Source Region by Zhi Jiang, Yiqi Zhuang, Cong Li, Ping Wang, Yuqi Liu

“…This paper presents tunneling field-effect transistor (TFET) with dual source regions. It explores the physics of drive current enhancement. …”
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An Enhanced Inverter Controller for PV Applications Using the dSPACE Platform by M. A. Hannan, Z. Abd Ghani, A. Mohamed

“…The SPWM signals switch the insulated gate bipolar transistor (IGBT) to stabilize the 50-Hz sinusoidal AC output voltages of the inverter. …”
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A New Simple Chaotic Lorenz-Type System and Its Digital Realization Using a TFT Touch-Screen Display Embedded System by Rodrigo Méndez-Ramírez, Adrian Arellano-Delgado, César Cruz-Hernández, Rigoberto Martínez-Clark

“…Finally, the DV of NCS was implemented, in real-time, by using a novel embedded system (ES) Mikromedia Plus for PIC32MX7 that includes one microcontroller PIC32 and one thin film transistor touch-screen display (TFTTSD), together with external digital-to-analog converters (DACs).…”
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SIMSCAPE Electrical Modelling of the IGBT with Parameter Optimization Using Genetic Algorithm by Mohamed Baghdadi, Elmostafa Elwarraki, Naoual Mijlad, Imane Ait Ayad

“…In this paper, a power insulated-gate bipolar transistor (IGBT) model using MATLAB graphical software is reproduced. …”
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Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation by Gim Heng Tan, Roslina Mohd Sidek, Harikrishnan Ramiah, Wei Keat Chong, De Xing Lioe

“…The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. …”
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Nanosensor Data Processor in Quantum-Dot Cellular Automata by Fenghui Yao, Mohamed Saleh Zein-Sabatto, Guifeng Shao, Mohammad Bodruzzaman, Mohan Malkani

“…QCA provides an interesting paradigm for faster speed, smaller size, and lower power consumption in comparison to transistor-based technology, in both communication and computation. …”
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Study on Single Event Upset and Mitigation Technique in JLTFET-Based 6T SRAM Cell by Aishwarya K, Lakshmi B

“…The effect of single event transient (SET) on 6T SRAM cell employing a 20 nm silicon-based junctionless tunneling field effect transistor (JLTFET) is explored for the first time. …”
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Analytical subthreshold swing model of junctionless elliptic gate-all-around (GAA) FET by Hakkee Jung

“…An analytical subthreshold swing (SS) model has been presented to determine the SS of an elliptic junctionless gate-all-around field-effect transistor (GAA FET). The analysis of a GAA FET with an elliptic cross-section is essential because it is difficult to manufacture a GAA FET with an accurate circular cross-section during the process. …”
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Unsupervised Learning in a Ternary SNN Using STDP by Abhinav Gupta, Sneh Saurabh

“…A ternary neuron is implemented using a Dual-Pocket Tunnel Field effect transistor (DP-TFET). The synapse consists of a Magnetic Tunnel Junction (MTJ) with a Heavy Metal (HM) underlayer, allowing for the adjustment of its conductance by directing a current through the HM layer. …”
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A 32 μm² MOS-Based Remote Sensing Temperature Sensor with 1.29 °C Inaccuracy for Thermal Management by Ruohan Yang, Kwabena Oppong Banahene, Bryce Gadogbe, Randall Geiger, Degang Chen

“…Fabricated using the TSMC 180 nm process with a 1.8 V supply, this sensor employs a single diode-connected NMOS transistor, achieving a significant size reduction and improved voltage headroom. …”
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SnO2 Nanostructure as Pollutant Gas Sensors: Synthesis, Sensing Performances, and Mechanism by Brian Yuliarto, Gilang Gumilar, Ni Luh Wulan Septiani

“…This semiconductor is interesting and worthy of further investigation because of its many uses, for example, as lithium battery electrode, energy storage, catalyst, and transistor, and has potential as a gas sensor. In addition, there has to be a discussion of the use of SnO2 as a pollutant gas sensor especially for waste products such as CO, CO2, SO2, and NOx. …”
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An Architecture of 2-Dimensional 4-Dot 2-Electron QCA Full Adder and Subtractor with Energy Dissipation Study by Md. Abdullah-Al-Shafi, Ali Newaz Bahar

“…Quantum-dot cellular automata (QCA) is the beginning of novel technology and is capable of an appropriate substitute for orthodox semiconductor transistor technology in the nanoscale extent. A competent adder and subtractor circuit can perform a substantial function in devising arithmetic circuits. …”
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RANCANG BANGUN PROTOTIPE DETEKTOR HUJAN SEDERHANA BERBASIS RAINDROP SENSOR MENGGUNAKAN BUZZER DAN LED by naila fauza

“…Alat detektor hujan ini terdiri atas komponen-komponen elektronika, yaitu raindrop sensor, buzzer, LED, transistor dan sakelar. Selanjutnya, dilakukan pengujian alat secara keseluruhan untuk melihat apakah alat berfungsi sesuai dengan tujuan. …”
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Energy-Efficient Discrete Cosine Transform Architecture Using Reversible Logic for IoT-Enabled Consumer Electronics by Muhammad Awais, Wilayat Khan, Tallha Akram, Yunyoung Nam

“…The proposed 8-point fully parallel DCT leverages a customized datapath based on a standard cell approach, integrating pass transistor logic and a full custom layout in UMC 90 nm CMOS technology. …”
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Rafraîchir les observatoires par le son by Cécile Regnault, Patrick Romieu

“…From the most notable disruptive innovations dating from the First World War to more seemingly mundane experiments such as the transistor, this article offers a theoretical and methodological look at sound observatories. …”
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