Very Compact and Broadband Active Antenna for VHF Band Applications by Y. Taachouche, F. Colombel, M. Himdi

“…An active receiving antenna with small size consisting of a monopole loaded with a transistor bipolar is presented in this paper. A transistor is used in order to miniaturize the receiving active antenna size in VHF band. …”
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New Low-Power Tristate Circuits in Positive Feedback Source-Coupled Logic by Kirti Gupta, Ranjana Sridhar, Jaya Chaudhary, Neeta Pandey, Maneesha Gupta

“…The first one is a switch-based technique while the second is based on the concept of sleep transistor. Different tristate circuits based on both techniques have been developed and simulated using 0.18 μm CMOS technology parameters. …”
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From Coherent States in Adjacent Graphene Layers toward Low-Power Logic Circuits by Leonard F. Register, Dipanjan Basu, Dharmendar Reddy

“…Colleagues and we recently proposed a new type of transistor, a Bilayer PseudoSpin Field Effect Transistor (BiSFET), based on many-body coherent states in coupled electron and hole layers in graphene. …”
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A New Type of Tri-Input TFET with T-Shaped Channel Structure Exhibiting Three-Input Majority Logic Behavior by Ye Hao, Jiang Zhidi, Hu Jianping

“…In this paper, we propose a new type of tri-input tunneling field-effect transistor (Ti-TFET) that can compactly realize the “Majority-Not” logic function with a single transistor. …”
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A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics by Eugeny A. Ryndin, Amgad A. Al-Saman, Boris G. Konoplev

“…A quasi-two-dimensional physics-based model of HEMT transistor without using any smoothing functions for joining the linear and saturation regions of current-voltage (I-V) characteristics was developed. …”
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Single-Event-Upset Sensitivity Analysis on Low-Swing Drivers by Nor Muzlifah Mahyuddin, Gordon Russell

“…Subsequently, other alternatives are considered. The impact of transistor sizes and temperature on SEU tolerance is tested. …”
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Model-Based Variation-Aware Optimization for Offset Calibration and Pre-Sensing in DRAM Sense Amplifiers by Dongyeong Kim, Geon Kim, Suyeon Kim, Jewon Park, Sinwook Kim, Hyeona Seo, Chaehyuk Lim, Sowon Kim, Juwon Lee, Jeonghyeon Yun, Hyerin Lee, Jinseok Park, Yongbok Lee, Seungchan Lee, Myoungjin Lee

“…In particular, threshold voltage mismatch caused by reduced transistor sizes introduces sensing offsets, further degrading the already limited sensing margins under low-voltage conditions. …”
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An Experiment and Detection Scheme for Cavity-Based Light Cold Dark Matter Particle Searches by Masroor H. S. Bukhari, Zahoor H. Shah

“…The scheme is based on our idea of a resonant detector, incorporating an integrated tunnel diode (TD) and GaAs HEMT/HFET (High-Electron Mobility Transistor/Heterogeneous FET) transistor amplifier, weakly coupled to a cavity in a strong transverse magnetic field. …”
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PULSE WIDTH MODULATION TECHNIQUE FOR THE SPEED CONTROL OF M-PHASE AC MOTORS by EGWAILE JOEL OSARUMWENSE, ORIAHI MATTHEW

“…At first a thyristor is configured as a PNP-type power transistor latch with two ordinary NPN bipolar switching transistors. …”
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Materials and devices for high‐density, high‐throughput micro‐electrocorticography arrays by Yang Xie, Yanxiu Peng, Jinhong Guo, Muyang Liu, Bozhen Zhang, Lan Yin, He Ding, Xing Sheng

“…Furthermore, recent findings highlight the need for further research and development in active transistor arrays, including silicon, metal oxide, and solution-gated transistors. …”
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New Results on the Noise Figure of HEMTs by M. A. Grado Caffaro, M. Grado Caffaro

“…In this communication, an accurate mathematical model for the noise figure of a high electron mobility transistor is developed. This model represents a substantial improvement of the Fukui model. …”
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A Novel Algorithm for Aspect Ratio Estimation in SRAM Design to Achieve High SNM, High Speed, and Low Leakage Power by Sanket M. Mantrashetti, Arunkumar P Chavan, Prakash Pawar, H. V. Ravish Aradhya, Omkar S. Powar

“…This paper introduces a novel algorithm for optimizing transistor sizing in static random-access memory (SRAM) to enhance speed, improve Static Noise Margin (SNM), and reduce leakage power consumption. …”
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Extraction of RDS(ON) of n-Channel Power MOSFET by Numerical Simulation Model by C. -T. Salame

“…The IDS=f(VDS) electrical characteristics measurements for the transistor and the Body-Drain junction are realized for the experimental determination and the extraction (by numerical analysis) of RDS(ON), respectively. …”
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Tunable First-Order Resistorless All-Pass Filter with Low Output Impedance by Parveen Beg

“…The filter is thus realized with the help of a DD-DXCCII, a capacitor, and a MOS transistor. By exploiting the low output impedance, a higher order filter is also realized. …”
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AN OVERVIEW OF NANOELECTRONICS AND NANODEVICES by OYUBU AKPOVI OYUBU, OKPEKI UFUOMA KAZEEM

“…As the name suggests, Nanoelectronics refers to employing nanotechnology in building electronic devices/components; especially transistors. Thus, transistor devices which are so small such that inter-atomic cooperation and quantum mechanical characteristics cannot be ignored are known as Nanoelectronics. …”
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An Improved Prediction Model of IGBT Junction Temperature Based on Backpropagation Neural Network and Kalman Filter by Yu Dou

“…With the rapid development of emerging technologies such as electric vehicles and high-speed railways, the insulated gate bipolar transistor (IGBT) is becoming increasingly important as the core of the power electronic devices. …”
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Design of Binary and Ternary Logic Inverters Based on Silicon Feedback FETs Using TCAD Simulator by Ashkan Horri

“…A feedback field effect transistor (FBFET) with p-n-p-n structure benefits from a positive feedback mechanism. …”
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2.4 GHz CMOS Power Amplifier with Mode-Locking Structure to Enhance Gain by Changhyun Lee, Changkun Park

“…To maximize the advantage of the typical mode-locking method in the cascode structure, the input of the cross-coupled transistor is modified from that of a typical mode-locking structure. …”
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Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision by Zhilin Liu, Mingxiu Liu, Liujian Qi, Nan Zhang, Bin Wang, Xiaojuan Sun, Rongjun Zhang, Dabing Li, Shaojuan Li

“…The polarization arises from hot electron injection caused by the plasmonic metal electrode and is amplified by the transistor to raise the anisotropic ratio from 2 to an impressive value over 60 in the infrared (IR) band, reaching the level of existing applications. …”
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Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral by Hugues Murray, Patrick Martin, Serge Bardy

“…We propose a simple model, derived from Pao-Sah theory, valid in all modes from weak to strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The Pao-Sah double integral is decomposed into single integrals with limits of integration calculated from Taylor polynomials of inverse functions. …”
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