The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications by Qian Yu, Sheng Wu, Meng Zhang, Ling Yang, Xu Zou, Hao Lu, Chunzhou Shi, Wenze Gao, Mei Wu, Bin Hou, Gang Qiu, Xiaoning He, Xiaohua Ma, Yue Hao

Subjects: “…high electron mobility transistors…”
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Non Quasi-Static Model of DG Junctionless FETs by Mohammad Bavir, Abdollah Abbasi, Ali Asghar Orouji, Farzan Jazaeri, Jean-Michel Sallese

Subjects: “…Double-gate field-effect transistors…”
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Real-time simulation comparison of the impact of inertia on grid following and grid forming inverter IGBT lifetime by Sunjoh Christian Verbe, Keigo Higashiura, Md. Amit Hasan, Ryuto Shigenobu, Akiko Takahashi, Masakazu Ito, Hisao Taoka

Subjects: “…Insulated gate bipolar transistor (IGBT)…”
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A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation by Minxi Cai, Wei Zhong, Bei Liu, Piaorong Xu, Jing Cao

Subjects: “…Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs)…”
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Partially Isolated Dual Work Function Gate IGZO TFT With Obviously Reduced Leakage Current for 3D DRAMs by Yunjiao Bao, Gangping Yan, Lei Cao, Chuqiao Niu, Qingkun Li, Guanqiao Sang, Lianlian Li, Yanzhao Wei, Xuexiang Zhang, Jie Luo, Yanyu Yang, Gaobo Xu, Huaxiang Yin

Subjects: “…In-Ga-Zn-O (IGZO) thin-fifilm transistor (TFT)…”
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Comprehensive survey of ternary full adders: Statistics, corrections, and assessments by Sarina Nemati, Mostafa Haghi Kashani, Reza Faghih Mirzaee

Subjects: “…carbon nanotube field effect transistors…”
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Performance analysis of high‐power three‐phase current source inverters in photovoltaic applications by Payam Alemi, Jiacheng Wang, Jianwen Zhang, Sahar Amini

Subjects: “…insulated gate bipolar transistors…”
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A low-power metal–oxide scan driver circuit outputting non-overlapping pulses with DC power-supplied buffer by HyeongMin Kim, JungSuk Oh, YiKyoung You, SangWoon Lee, KeeChan Park

Subjects: “…double-gate (DG) metal-oxide (MOx) thin-film transistor (TFT)…”
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A High-Efficiency Charge-Domain Compute-in-Memory 1F1C Macro Using 2-bit FeFET Cells for DNN Processing by Nellie Laleni, Franz Muller, Gonzalo Cunarro, Thomas Kampfe, Taekwang Jang

Subjects: “…ferroelectric field-effect transistor (FeFET)…”
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Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique by Toufik Bentrcia, Fayçal Djeffal, Elasaad Chebaki

Subjects: “…double-gate metal oxide silicon field effect transistors…”
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A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs by Fanzhao Meng, Yi Li, Jun Li, Jie Liang, Jianhua Zhang

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Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics by Yansong Lu, Yijun Ding, Jia Li, Hao Yin, Xinlian Li, Chong Zhu, Xi Zhang

Subjects: “…metal oxide semiconductor field-effect transistors (MOSFETs)…”
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Active Components Based on Dynamic Negatrons by Pavlo Molchanov, Arun K. Mishra, Helen Linnik, Pavlo Mulyar

“…The active elements based on dynamic transistor negatrons (circuits with negative active differential resistance) are introduced. …”
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Design of a Cell Phone Detector. by Atuheire, Gift

“…It does this by detecting the signal produced by the cellphone and this causes the LED to blink and buzzer to sound. A BFN38 transistor is the major component incorporated within this project as an RF transistor that can amplify the low Radio frequencies hence the increase on the range compared to the other project circuits without any RF transistor…”
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A Nanotechnology Enhancement to Moore's Law by Jerry Wu, Yin-Lin Shen, Kitt Reinhardt, Harold Szu, Boqun Dong

“…Intel Moore observed an exponential doubling in the number of transistors in every 18 months through the size reduction of transistor components since 1965. …”
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Noise tolerant and power optimized ternary combinational circuits for arithmetic logic unit by Katyayani Chauhan, Deepika Bansal

“…These designs aim to reduce the power consumption and minimize the transistor counts while maintaining low noise sensitivity. …”
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Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs by Danqiong Hou, Griff L. Bilbro, Robert J. Trew

“…We have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model suitable for use in commercial harmonic-balance microwave circuit simulators. …”
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Temperature dependence of analogue/RF performance, linearity and harmonic distortion for dual‐material gate‐oxide‐stack double‐gate TFET by Satyendra Kumar

“…Abstract This article presents an investigation report of the effects of temperature variation in the range of 300 to 480 K on electrical performance parameters of conventional dual‐material double‐gate tunnel field effect transistor (DMDG‐TFET) and dual‐material gate‐oxide‐stack double‐gate tunnel field effect transistor (DMGOSDG‐TFET). …”
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Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S₂₂ and h₂₁: An Effective Machine Learning Approach by Zegen Zhu, Gianni Bosi, Antonio Raffo, Giovanni Crupi, Jialin Cai

“…It is worth noticing that the proposed transistor model shows also good performance in both interpolation and extrapolation test.…”
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Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices by T. D. Subash, T. Gnanasekaran, C. Divya, J. Jagannathan

“…The InSb is a material which is used to design the transistor. For designing purpose the simulator TCAD is used, by which the HEMT device is structured and its performance is analyzed and it is found that transistor operates as normal devices. …”
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