Showing 61 - 80 results of 332 for search '"transistor"', query time: 0.04s Refine Results
  1. 61

    Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays by Yuhao Shan, Yanfei Liu, Hao Zheng, Zheng Peng

    Published 2022-01-01
    “…Transistors working in complex radiation environments such as space are simultaneously irradiated by neutrons and gamma rays. …”
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    Article
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    A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel by Zening Mo, Zhidi Jiang, Jianping Hu

    Published 2022-01-01
    “…In this article, a novel three-input field effect transistor with parallel switching function (PSF-TiFET) is proposed. …”
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    Article
  6. 66

    Simulating Organic Thin Film Transistors Using Multilayer Perceptron Regression Models to Enable Circuit Design by Laurie E. Calvet, Sami El‐Nakouzi, Zonglong Li, Yerin Kim, Amer Zaibi, Patryk Golec, Ie Mei Bhattacharyya, Yvan Bonnassieux, Lina Kadura, Benjamin Iñiguez

    Published 2024-12-01
    “…Each one is fit to measurements of discrete organic thin film transistors in the low voltage regime. It is shown that the models provide consistent results when designing artificial neuron circuits, but that the MLP regression provides the highest accuracy and is much simpler to fit compared to the compact model. …”
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    Article
  7. 67

    Modulating Alkyl Groups in Copolymer to Control Ion Transport in Electrolyte‐Gated Organic Transistors for Neuromorphic Computing by Junho Sung, Minji Kim, Sein Chung, Yongchan Jang, Soyoung Kim, Min‐Seok Kang, Hee‐Young Lee, Joonhee Kang, Donghwa Lee, Wonho Lee, Eunho Lee

    Published 2025-01-01
    “…Electrolyte‐gated organic synaptic transistors (EGOSTs) have shed light on their potential in bioelectronics and neuromorphic computing. …”
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    Article
  8. 68

    Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2 by Hao-Yu Lan, Shao-Heng Yang, Karim-Alexandros Kantre, Daire Cott, Rahul Tripathi, Joerg Appenzeller, Zhihong Chen

    Published 2025-01-01
    “…Abstract The successful integration of ultrathin high-κ insulators is essential for the advancement of ultra-scaled field-effect transistors (FETs) based on two-dimensional (2D) semiconductors in future technology nodes. …”
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    Article
  9. 69

    Evaluation of Aromatic Boronic Acids as Ligands for Measuring Diabetes Markers on Carbon Nanotube Field-Effect Transistors by Steingrimur Stefansson, Lára A. Stefansson, Suk-won Chung, Kevin Ko, Hena H. Kwon, Saeyoung Nate Ahn

    Published 2012-01-01
    “…Biomolecular detections performed on carbon nanotube field-effect transistors (CNT-FETs) frequently use reactive pyrenes as an anchor to tether bioactive ligands to the hydrophobic nanotubes. …”
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    Article
  10. 70

    Low-Power Differential Voltage-Controlled Ring Oscillator Based on Carbon Nanotube Field-Effect Transistor (CNTFET) by Saba Naseri Akbar

    Published 2025-01-01
    Subjects: “…carbon nanotube field effect transistor (cntfet)…”
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    A Gray-Box Equivalent Neural Network Circuit Small-Signal Modeling Applied to GaN Transistors by Anwar Jarndal

    Published 2025-01-01
    “…Efficient transistor modeling is an essential step toward improved fabrication processes and reliable circuit design. …”
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    Article
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    Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer by Yongsu Lee, Hae-Won Lee, Su Jin Kim, Jeong Min Park, Byoung Hun Lee, Chang Goo Kang

    Published 2025-01-01
    “…However, thin-film transistors (TFTs) do not exhibit intrinsic radiation hardness owing to the chemical reactions at the interface exposed to ambient air. …”
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    A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET by Huu Thai Bui, Chun-Hsing Shih, Dang Chien Nguyen

    Published 2024-09-01
    “… Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and a laterally doped pocket for a very low bandgap line-TFET. …”
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