-
41
Pass-Transistor-Enabled Split Input Voltage Level Shifter for Ultra-Low-Power Applications
Published 2025-01-01“…In this article, a Pass-Transistor-Enabled Split Input Voltage Level Shifter (PVLS) is designed for area, delay, and power-efficient applications with a wide voltage conversion range. …”
Get full text
Article -
42
Current mirror with charge dissipation transistor for analogue single‐event transient mitigation in space application
Published 2021-03-01“…Abstract Current mirror utilizing an extra transistor for single‐event‐induced charge dissipation is proposed. …”
Get full text
Article -
43
Low-power artificial neuron networks with enhanced synaptic functionality using dual transistor and dual memristor.
Published 2025-01-01“…The suggested circuit employs memristor-based artificial neurons with Dual Transistor and Dual Memristor (DTDM) synapse circuit. …”
Get full text
Article -
44
High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications
Published 2024-01-01Subjects: “…Carbon nanotube field-effect transistors (CNFETs)…”
Get full text
Article -
45
Annealing Study on Praseodymium-Doped Indium Zinc Oxide Thin-Film Transistors and Fabrication of Flexible Devices
Published 2024-12-01Subjects: Get full text
Article -
46
Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays
Published 2022-01-01“…Transistors working in complex radiation environments such as space are simultaneously irradiated by neutrons and gamma rays. …”
Get full text
Article -
47
DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS
Published 2020-09-01Subjects: Get full text
Article -
48
Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors
Published 2024-01-01Subjects: Get full text
Article -
49
A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel
Published 2022-01-01“…In this article, a novel three-input field effect transistor with parallel switching function (PSF-TiFET) is proposed. …”
Get full text
Article -
50
Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2
Published 2025-01-01“…Abstract The successful integration of ultrathin high-κ insulators is essential for the advancement of ultra-scaled field-effect transistors (FETs) based on two-dimensional (2D) semiconductors in future technology nodes. …”
Get full text
Article -
51
Evaluation of Aromatic Boronic Acids as Ligands for Measuring Diabetes Markers on Carbon Nanotube Field-Effect Transistors
Published 2012-01-01“…Biomolecular detections performed on carbon nanotube field-effect transistors (CNT-FETs) frequently use reactive pyrenes as an anchor to tether bioactive ligands to the hydrophobic nanotubes. …”
Get full text
Article -
52
Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™
Published 2025-01-01Get full text
Article -
53
A Gray-Box Equivalent Neural Network Circuit Small-Signal Modeling Applied to GaN Transistors
Published 2025-01-01“…Efficient transistor modeling is an essential step toward improved fabrication processes and reliable circuit design. …”
Get full text
Article -
54
Organic–Inorganic Hybrid Dielectric Layers for Low-Temperature Thin-Film Transistors Applications: Recent Developments and Perspectives
Published 2025-01-01Subjects: “…transistors…”
Get full text
Article -
55
Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer
Published 2025-01-01“…However, thin-film transistors (TFTs) do not exhibit intrinsic radiation hardness owing to the chemical reactions at the interface exposed to ambient air. …”
Get full text
Article -
56
Performance Optimization of Fabricated Nanosheet GAA CMOS Transistors and 6T-SRAM Cells via Source/Drain Doping Engineering
Published 2025-01-01Subjects: “…Gate-all-around nanosheet transistor (GAA NSFET)…”
Get full text
Article -
57
Spin‐coating fabrication of high‐yield and uniform organic thin‐film transistors via a primer template growth
Published 2025-01-01Subjects: Get full text
Article -
58
A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
Published 2024-09-01“… Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and a laterally doped pocket for a very low bandgap line-TFET. …”
Get full text
Article -
59
-
60
Correlation Between Quantum Confinement Effect and Characteristics of Thin-Film Transistors in Solution-Processed Oxide-Based Thin-Films
Published 2024-01-01“…When uniform thin films formed, the PL emission peaks disappeared due to the increase of electrical and morphological connectivity, which reveals that the analysis of PL emission peak can be used to evaluate the film quality and the performance of thin-film transistors (TFTs) in solution-processed oxide-based materials.…”
Get full text
Article