Showing 41 - 60 results of 244 for search '"transistor"', query time: 0.05s Refine Results
  1. 41

    Pass-Transistor-Enabled Split Input Voltage Level Shifter for Ultra-Low-Power Applications by Chakali Chandrasekhar, Mohammed Mahaboob Basha, Sari Mohan Das, Oruganti Hemakesavulu, Mohan Dholvan, Javed Syed

    Published 2025-01-01
    “…In this article, a Pass-Transistor-Enabled Split Input Voltage Level Shifter (PVLS) is designed for area, delay, and power-efficient applications with a wide voltage conversion range. …”
    Get full text
    Article
  2. 42

    Current mirror with charge dissipation transistor for analogue single‐event transient mitigation in space application by Jingtian Liu, Bin Liang, Jianjun Chen, Yaqing Chi, Li Yan, Yang Guo

    Published 2021-03-01
    “…Abstract Current mirror utilizing an extra transistor for single‐event‐induced charge dissipation is proposed. …”
    Get full text
    Article
  3. 43

    Low-power artificial neuron networks with enhanced synaptic functionality using dual transistor and dual memristor. by Keerthi Nalliboyina, Sakthivel Ramachandran

    Published 2025-01-01
    “…The suggested circuit employs memristor-based artificial neurons with Dual Transistor and Dual Memristor (DTDM) synapse circuit. …”
    Get full text
    Article
  4. 44
  5. 45
  6. 46

    Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays by Yuhao Shan, Yanfei Liu, Hao Zheng, Zheng Peng

    Published 2022-01-01
    “…Transistors working in complex radiation environments such as space are simultaneously irradiated by neutrons and gamma rays. …”
    Get full text
    Article
  7. 47
  8. 48
  9. 49

    A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel by Zening Mo, Zhidi Jiang, Jianping Hu

    Published 2022-01-01
    “…In this article, a novel three-input field effect transistor with parallel switching function (PSF-TiFET) is proposed. …”
    Get full text
    Article
  10. 50

    Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2 by Hao-Yu Lan, Shao-Heng Yang, Karim-Alexandros Kantre, Daire Cott, Rahul Tripathi, Joerg Appenzeller, Zhihong Chen

    Published 2025-01-01
    “…Abstract The successful integration of ultrathin high-κ insulators is essential for the advancement of ultra-scaled field-effect transistors (FETs) based on two-dimensional (2D) semiconductors in future technology nodes. …”
    Get full text
    Article
  11. 51

    Evaluation of Aromatic Boronic Acids as Ligands for Measuring Diabetes Markers on Carbon Nanotube Field-Effect Transistors by Steingrimur Stefansson, Lára A. Stefansson, Suk-won Chung, Kevin Ko, Hena H. Kwon, Saeyoung Nate Ahn

    Published 2012-01-01
    “…Biomolecular detections performed on carbon nanotube field-effect transistors (CNT-FETs) frequently use reactive pyrenes as an anchor to tether bioactive ligands to the hydrophobic nanotubes. …”
    Get full text
    Article
  12. 52
  13. 53

    A Gray-Box Equivalent Neural Network Circuit Small-Signal Modeling Applied to GaN Transistors by Anwar Jarndal

    Published 2025-01-01
    “…Efficient transistor modeling is an essential step toward improved fabrication processes and reliable circuit design. …”
    Get full text
    Article
  14. 54
  15. 55

    Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer by Yongsu Lee, Hae-Won Lee, Su Jin Kim, Jeong Min Park, Byoung Hun Lee, Chang Goo Kang

    Published 2025-01-01
    “…However, thin-film transistors (TFTs) do not exhibit intrinsic radiation hardness owing to the chemical reactions at the interface exposed to ambient air. …”
    Get full text
    Article
  16. 56
  17. 57
  18. 58

    A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET by Huu Thai Bui, Chun-Hsing Shih, Dang Chien Nguyen

    Published 2024-09-01
    “… Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and a laterally doped pocket for a very low bandgap line-TFET. …”
    Get full text
    Article
  19. 59
  20. 60

    Correlation Between Quantum Confinement Effect and Characteristics of Thin-Film Transistors in Solution-Processed Oxide-Based Thin-Films by Jinyeong Lee, Jaewook Jeong

    Published 2024-01-01
    “…When uniform thin films formed, the PL emission peaks disappeared due to the increase of electrical and morphological connectivity, which reveals that the analysis of PL emission peak can be used to evaluate the film quality and the performance of thin-film transistors (TFTs) in solution-processed oxide-based materials.…”
    Get full text
    Article