Showing 21 - 40 results of 332 for search '"transistor"', query time: 0.04s Refine Results
  1. 21

    High-performance hysteresis-free perovskite transistors through anion engineering by Huihui Zhu, Ao Liu, Kyu In Shim, Haksoon Jung, Taoyu Zou, Youjin Reo, Hyunjun Kim, Jeong Woo Han, Yimu Chen, Hye Yong Chu, Jun Hyung Lim, Hyung-Jun Kim, Sai Bai, Yong-Young Noh

    Published 2022-04-01
    “…Abstract Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. …”
    Get full text
    Article
  2. 22

    Synthesis of Gold Nanoparticles Capped with Quaterthiophene for Transistor and Resistor Memory Devices by Mai Ha Hoang, Toan Thanh Dao, Nguyen Thi Thu Trang, Phuong Hoai Nam Nguyen, Trinh Tung Ngo

    Published 2016-01-01
    “…The intermolecular interaction between 4TT and P3HT could enhance the charge-transport between gold nanoparticles and P3HT. Transfer curve of transistor memory device made of 4TTG/P3HT hybrid film exhibited significant current hysteresis, probably arising from the energy level barrier at 4TTG/P3HT interface. …”
    Get full text
    Article
  3. 23
  4. 24
  5. 25

    Effect of Processing Parameters on Performance of Spray-Deposited Organic Thin-Film Transistors by Jack W. Owen, Natalia A. Azarova, Marsha A. Loth, Markos Paradinas, Mariona Coll, Carmen Ocal, John E. Anthony, Oana D. Jurchescu

    Published 2011-01-01
    “…The performance of organic thin-film transistors (OTFTs) is often strongly dependent on the fabrication procedure. …”
    Get full text
    Article
  6. 26

    Noncontact Monitoring and Imaging of the Operation and Performance of Thin‐Film Field‐Effect Transistors by Kwangsik Jeong, Dong yeob Shin, Ji‐Min Park, Dong‐Joon Yi, Hyunmin Hong, Hyun‐Suk Kim, Kwun‐Bum Chung

    Published 2025-02-01
    “…Abstract In this study, the first noncontact and non‐destructive methodology is developed for monitoring and imaging the operation and performance of thin‐film field‐effect transistors (TFTs) using second‐harmonic generation (SHG) imaging. …”
    Get full text
    Article
  7. 27

    Optimizing MoS2 Electrolyte‐Gated Transistors: Stability, Performance, and Sensitivity Enhancements by Steffen Rühl, Giovanni Ligorio, Max Heyl, Emil J. W. List‐Kratochvil

    Published 2024-12-01
    “…Abstract Electrolyte‐gated field‐effect transistors (EGFETs) based on transition metal dichalcogenides (TMDCs) are promising for biosensing applications due to their high transconductance (1.98 mS) and surface sensitivity enabling the detection of minute interfacial changes. …”
    Get full text
    Article
  8. 28
  9. 29

    Utilization of nanomaterials functionalized bio-field-effect transistors for detection of cancer biomarkers by Keerthana Madhivanan, Raji Atchudan, Sandeep Arya, Ashok K. Sundramoorthy

    Published 2024-06-01
    “…Over the last decade, the field-effect transistors (FETs) based biosensors have been demonstrated for the detection of various cancer biomarkers. …”
    Get full text
    Article
  10. 30

    Thin film field-effect transistor with ZnO:Li ferroelectric channel by Armen Poghosyan, Ruben Hovsepyan, Hrachya Mnatsakanyan

    Published 2025-02-01
    Subjects: “…Transparent field-effect transistor…”
    Get full text
    Article
  11. 31
  12. 32
  13. 33
  14. 34
  15. 35

    Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors by Xhesila Xhafa, Ali Dogus Gungordu, Mustafa Berke Yelten

    Published 2024-01-01
    “…This paper presents a machine-learning-based approach for the degradation modeling of hot carrier injection in metal-oxide-semiconductor field-effect transistors (MOSFETs). Stress measurement data have been employed at various stress conditions of both n- and p-MOSFETs with different channel geometries. …”
    Get full text
    Article
  16. 36

    Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in Subthreshold Region by Priya Gupta, Anu Gupta, Abhijit Asati

    Published 2015-01-01
    “…The paper presents a novel 8T SRAM cell with access pass gates replaced with modified PMOS pass transistor logic. In comparison to 6T SRAM cell, the proposed cell achieves 3.5x higher read SNM and 2.4x higher write SNM with 16.6% improved SINM (static current noise margin) distribution at the expense of 7x lower WTI (write trip current) at 0.4 V power supply voltage, while maintaining similar stability in hold mode. …”
    Get full text
    Article
  17. 37

    DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors by H. C. Chen

    Published 1998-01-01
    “…DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor (NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. …”
    Get full text
    Article
  18. 38
  19. 39

    Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions by Iman Chahardah Cherik, Saeed Mohammadi, Paul K. Hurley, Lida Ansari, Farzan Gity

    Published 2025-02-01
    “…Abstract In this paper, we examine the effects of subband quantization on the efficacy of an L-shaped gate vertical dopingless tunneling field-effect transistor. The proposed architecture leverages an intrinsic tunneling interface that is fully aligned with the gate metal, resulting in enhanced electrostatic control. …”
    Get full text
    Article
  20. 40

    Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design by Mathan Natarajamoorthy, Jayashri Subbiah, Nurul Ezaila Alias, Michael Loong Peng Tan

    Published 2020-01-01
    “…The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects. …”
    Get full text
    Article