Showing 21 - 40 results of 244 for search '"transistor"', query time: 0.05s Refine Results
  1. 21

    Effect of Processing Parameters on Performance of Spray-Deposited Organic Thin-Film Transistors by Jack W. Owen, Natalia A. Azarova, Marsha A. Loth, Markos Paradinas, Mariona Coll, Carmen Ocal, John E. Anthony, Oana D. Jurchescu

    Published 2011-01-01
    “…The performance of organic thin-film transistors (OTFTs) is often strongly dependent on the fabrication procedure. …”
    Get full text
    Article
  2. 22

    Noncontact Monitoring and Imaging of the Operation and Performance of Thin‐Film Field‐Effect Transistors by Kwangsik Jeong, Dong yeob Shin, Ji‐Min Park, Dong‐Joon Yi, Hyunmin Hong, Hyun‐Suk Kim, Kwun‐Bum Chung

    Published 2025-02-01
    “…Abstract In this study, the first noncontact and non‐destructive methodology is developed for monitoring and imaging the operation and performance of thin‐film field‐effect transistors (TFTs) using second‐harmonic generation (SHG) imaging. …”
    Get full text
    Article
  3. 23
  4. 24
  5. 25
  6. 26
  7. 27

    Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors by Xhesila Xhafa, Ali Dogus Gungordu, Mustafa Berke Yelten

    Published 2024-01-01
    “…This paper presents a machine-learning-based approach for the degradation modeling of hot carrier injection in metal-oxide-semiconductor field-effect transistors (MOSFETs). Stress measurement data have been employed at various stress conditions of both n- and p-MOSFETs with different channel geometries. …”
    Get full text
    Article
  8. 28

    Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in Subthreshold Region by Priya Gupta, Anu Gupta, Abhijit Asati

    Published 2015-01-01
    “…The paper presents a novel 8T SRAM cell with access pass gates replaced with modified PMOS pass transistor logic. In comparison to 6T SRAM cell, the proposed cell achieves 3.5x higher read SNM and 2.4x higher write SNM with 16.6% improved SINM (static current noise margin) distribution at the expense of 7x lower WTI (write trip current) at 0.4 V power supply voltage, while maintaining similar stability in hold mode. …”
    Get full text
    Article
  9. 29

    DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors by H. C. Chen

    Published 1998-01-01
    “…DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor (NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. …”
    Get full text
    Article
  10. 30
  11. 31

    Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions by Iman Chahardah Cherik, Saeed Mohammadi, Paul K. Hurley, Lida Ansari, Farzan Gity

    Published 2025-02-01
    “…Abstract In this paper, we examine the effects of subband quantization on the efficacy of an L-shaped gate vertical dopingless tunneling field-effect transistor. The proposed architecture leverages an intrinsic tunneling interface that is fully aligned with the gate metal, resulting in enhanced electrostatic control. …”
    Get full text
    Article
  12. 32

    Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design by Mathan Natarajamoorthy, Jayashri Subbiah, Nurul Ezaila Alias, Michael Loong Peng Tan

    Published 2020-01-01
    “…The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects. …”
    Get full text
    Article
  13. 33

    Step-necking growth of silicon nanowire channels for high performance field effect transistors by Lei Wu, Zhiyan Hu, Lei Liang, Ruijin Hu, Junzhuan Wang, Linwei Yu

    Published 2025-01-01
    “…Abstract Ultrathin silicon nanowires (diameter <30 nm) with strong electrostatic control are ideal quasi-1D channel materials for high-performance field effect transistors, while a short channel is desirable to enhance driving current. …”
    Get full text
    Article
  14. 34

    A novel 8T SRAM cell using PFC and PPC VS-CNTFET transistor by Vipin Kumar Sharma, Abhishek Kumar

    Published 2025-01-01
    “…The experiment with carbon nanotube field-effect transistor (CNTFET) offers higher drive current and lower power consumption compared to conventional silicon-based transistors. …”
    Get full text
    Article
  15. 35
  16. 36

    Memristor‐transistor hybrid ternary content addressable memory using ternary memristive memory cell by Masoodur Rahman Khan, ABM Harun‐ur Rashid

    Published 2021-10-01
    “…Abstract A memristor‐transistor hybrid ternary content addressable memory (MTCAM) with a memristor‐based ternary memory cell is proposed. …”
    Get full text
    Article
  17. 37

    Physics-Based Compact Model of Independent Dual-Gate BEOL-Transistors for Reliable Capacitorless Memory by Lihua Xu, Kaifei Chen, Zhi Li, Yue Zhao, Lingfei Wang, Ling Li

    Published 2024-01-01
    “…Capacitorless DRAM architectures based on Back-End-of-Line (BEOL)-transistors are promising for long-retention, high-density and low-power 3D DRAM solutions due to its low leakage, operational flexibility, and monolithic integration capability. …”
    Get full text
    Article
  18. 38
  19. 39

    A Virtual Fabrication and High-Performance Design of 65 nm Nanocrystal Floating-Gate Transistor by Thinh Dang Cong, Trang Hoang

    Published 2024-01-01
    “…Besides, the transistor achieves a thin thickness of the tunnel gate oxide layer. …”
    Get full text
    Article
  20. 40