Design of Direct Current Microgrid Converter with Cost-Effective Low-Voltage Battery Storage System by Juraj Tvarožek, Michal Prazenica, Tomáš Paulec, Slavomir Kaščák, Patrik Resutík

“…Changing the switching control scheme of the power transistors makes it possible to reduce the requirements for the driving components used with minimal impact on the power conversion efficiency (Δη 1–4%). …”
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Controllable synthesis of nonlayered high-κ Mn3O4 single-crystal thin films for 2D electronics by Jiashuai Yuan, Chuanyong Jian, Zhihui Shang, Yu Yao, Bicheng Wang, Yixiang Li, Rutao Wang, Zhipeng Fu, Meng Li, Wenting Hong, Xu He, Qian Cai, Wei Liu

“…The material demonstrated a dielectric constant up to 135, an equivalent oxide thickness (EOT) as low as 0.8 nm, and a breakdown field strength (E bd) exceeding 10 MV/cm. MoS2 field-effect transistors (FETs) integrated with Mn3O4 thin films through mechanical stacking method operate under low voltages (<1 V), achieving a near 108 Ion/Ioff ratio and a subthreshold swing (SS) as low as 84 mV/dec. …”
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Anisotropic nonlinear optical responses of Ta2NiS5 flake towards ultrafast logic gates and secure all-optical information transmission by Yan Lei, Gong Ziyao, He Qinyong, Shen Dechao, Ge Anping, Dai Ye, Ma Guohong, Sun Liaoxin, Zhang Saifeng

“…Optical logic gates based on nonlinear optical property of material with ultrafast response speed and excellent computational processing power can break the performance bottleneck of electronic transistors. As one of the layered 2D materials, Ta2NiS5 exhibits high anisotropic mobility, exotic electrical response, and intriguing optical properties. …”
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Separation of Highly Pure Semiconducting Single-Wall Carbon Nanotubes in Alkane Solvents via Double Liquid-Phase Extraction by Ahmad Al Shboul, Mohamed Siaj, Jerome Claverie

“…These dispersions hold promise for fabricating fast-drying s-SWCNT inks, which are ideal for printed and flexible thin-film transistors.…”
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Design of High Performance Hybrid Type Digital-Feedback Low Drop-Out Regulator Using SSCG Technique by Muhammad Asif, Imran Ali, Danial Khan, Muhammad Riaz Ur Rehman, Younggun Pu, Sang-Sun Yoo, Kang-Yoon Lee

“…The proposed hybrid DF-LDO uses arrays of PMOS transistors in coarse and fine mode whereas in retention mode, only one comparator and NMOS are active and digital controller goes into the sleep mode. …”
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Stability of GaN HEMT Device Under Static and Dynamic Gate Stress by Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu

“…In this work, we investigated the stability of a <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. …”
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Development of a Bipolar Radio-frequency Power Supply for Structures of Lossless Ion Manipulations by Qing LIU, Run-ze XU, Yun-jing ZHANG, Ling-feng LI, Peng LI

“…In addition, the output stage used a half-bridge circuit with GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) as the core devices. Given the capacitive load characteristics of SLIM, the filter characteristics of a resistor-inductor-capacitor (RLC) circuit were utilized to output bipolar sinusoidal pulse voltages. …”
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Extrapolation of Metal Gate With High-K Spacer in Strained Nanosystem Channel QWB Cylindrical FET for High-Speed Applications by Rasmita Barik, Rudra Sankar Dhar, Kuleen Kumar, Yash Sharma, Amit Banerjee

“…The development of novel strain-engineered channel Cylindrical Gate-All-Around (CGAA) quantum well-barrier (QWB) field-effect transistors (FETs) using high-k gate stacks and metallic gates with varying work functions is analyzed, offering enhanced performance to meet the 1 nm technology node of IRDS 2028. …”
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Mechanism of Threshold Voltage Instability in Double Gate &#x03B1;-IGZO Nanosheet TFT Under Bias and Temperature Stress by Muhammad Aslam, Shu-Wei Chang, Yi-Ho Chen, Yao-Jen Lee, Yiming Li, Wen-Hsi Lee

“…ABSTRACT Amorphous indium gallium zinc oxide (a-IGZO)-based thin film transistors (TFTs) are increasingly becoming popular because of their potential in futuristic applications, including CMOS technology. …”
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Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content by Jith Sarker, Prachi Garg, Abrar Rauf, Ahsiur Rahman Nirjhar, Hsien‐Lien Huang, Menglin Zhu, A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Hongping Zhao, Jinwoo Hwang, Eric Osei‐Agyemang, Saquib Ahmed, Baishakhi Mazumder

“…Abstract (AlxGa1–x)2O3 is an ultrawide‐bandgap semiconductor with a high critical electric field for next‐generation high‐power transistors and deep‐ultraviolet photodetectors. While (010)‐(AlxGa1–x)2O3 films have been studied, the recent availability of (100), (2¯01)‐Ga2O3 substrates have developed interest in (100), (2¯01)‐(AlxGa1–x)2O3 films. …”
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Experimental Investigation of the Effect of Two-Stage Peltier Application on the Temperature of a Microprocessor by Fatih Uysal, Sinan Çobaner

“…Increasing the number of transistors to enhance the performance of processors leads to overheating, creating a need for cooling. …”
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A novel pulse-current waveform circuit for low-energy consumption and low-noise transcranial magnetic stimulation by Xinhua Tan, Ao Guo, Jiasheng Tian, Yingwei Li, Yingwei Li, Jian Shi

“…Finally, four insulated-gate bipolar transistors, controlled by a series of PWM pulse sequences, generated the desired pulse-current duration and direction in the H-bridge circuit. …”
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