High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant by Qiyi Fang, Kongyang Yi, Tianshu Zhai, Shisong Luo, Chen-yang Lin, Qing Ai, Yifan Zhu, Boyu Zhang, Gustavo A. Alvarez, Yanjie Shao, Haolei Zhou, Guanhui Gao, Yifeng Liu, Rui Xu, Xiang Zhang, Yuzhe Wang, Xiaoyin Tian, Honghu Zhang, Yimo Han, Hanyu Zhu, Yuji Zhao, Zhiting Tian, Yu Zhong, Zheng Liu, Jun Lou

“…We also demonstrated the improved performance of monolayer MoS2 field-effect-transistors when utilizing 2DP-F thin films as dielectric substrates.…”
Get full text

Medium-scale flexible integrated circuits based on 2D semiconductors by Yalin Peng, Chenyang Cui, Lu Li, Yuchen Wang, Qinqin Wang, Jinpeng Tian, Zhiheng Huang, Biying Huang, Yangkun Zhang, Xiuzhen Li, Jian Tang, Yanbang Chu, Wei Yang, Dongxia Shi, Luojun Du, Na Li, Guangyu Zhang

“…Despite notable progress, so far the showcased 2D flexible ICs have been constrained to basic logic gates and ring oscillators with a maximum integration scale of a few thin film transistors (TFTs), creating a significant disparity in terms of circuit scale and functionality. …”
Get full text

Multi-terminal flexible DC grid circuit breaker withstands multi-lightning strike analysis by Yutao Tang, Hongchun Shu, Kai He, Yue Dai, Yu Kuang, Yiming Han, Weijie Lou

“…During multi-lightning strikes, lightning intrusive waves pose a greater threat to the insulation of equipment such as hybrid DC fuses, fast mechanical switches, and insulated gate bipolar transistors. Therefore, this paper establishes a simulation model using the Real-Time Digital Simulator based on the model and parameters of the DCCB in the ± 500 kV Zhangbei HVDC project in China. …”
Get full text

Modeling Surface Recombination at the p-Type Si/SiO2Interface via Dangling Bond Amphoteric Centers by Moustafa Y. Ghannam, Husain A. Kamal

“…Such a finding provides a firm and plausible interpretation for the double peak surface recombination current measured in gated diodes or gated transistors. Successful fitting is possible between the results of the model and reported experimental curves showing two peaks for surface recombination velocity versus surface potential. …”
Get full text

Efficient design of non-restoring parity-preserving reversible divider by Mohammad Talebi, Mohammad Mosleh, Mohsen Chekin

“…<p>One of the basic challenges in high-density integrated circuits is loss of power consumption, which is caused by presence of transistors in circuits and causes the temperature of the circuit to increase. …”
Get full text

Nano-seeding catalysts for high-density arrays of horizontally aligned carbon nanotubes with wafer-scale uniformity by Ying Xie, Yue Li, Zhisheng Peng, Chengyu Wang, Zanlin Qiu, Xinyi Cai, Tinglu Song, Jia Si, Xiaoxu Zhao, Liu Qian, Ziqiang Zhao, Jin Zhang

“…The electrical properties of high on-state current, high on/off ratio and low subthreshold swing are demonstrated in field-effect transistors based on the arrays. This study propels the scalability of carbon-nanotube-array fabrication for future carbon-based electronics.…”
Get full text

Graphene nanomaterial-based electrochemical biosensors for salivary biomarker detection: A translational approach to oral cancer diagnostics by D. Mahalakshmi, J. Nandhini, G. Meenaloshini, E. Karthikeyan, KK Karthik, J. Sujaritha, Vandhana, V, C. Ragavendran

“…Various electrochemical detection techniques, such as cyclic voltammetry, differential pulse voltammetry, electrochemical impedance spectroscopy, field-effect transistors, amperometry, chronoamperometry, and photoelectrochemical methods, are explored in the context of graphene-based biosensors. …”
Get full text

Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks by Xiaoying Tang, Zhiqiang Li, Lang Zeng, Hongwei Zhou, Xiaoxu Cheng, Zhenjie Yao

“…Therefore, this work proposes a machine learning-based device modeling algorithm to capture the complex nonlinear relationship between parameters and electrical characteristics of gate-all-around (GAA) nanowire field-effect transistors (NWFETs) from technology computer-aided design (TCAD) simulation results. …”
Get full text

TX to RX Compact Leakage Cancellation Impedance Tuner for 60 GHz Monostatic Doppler Radar by Ahmad Mushtaq, Thomas Mausolf, Wolfgang Miesch, Nasir Uddin, Wolfgang Winkler, Dietmar Kissinger

“…The IT offers 5-bit phase control and 8-bit magnitude control via the Serial Peripheral Interface (SPI); moreover, it uses SiGe transistors in reverse saturation to enhance the impedance tuning performance. …”
Get full text

Spectral Steady-State Analysis of Inverters With Temperature-Dependent Losses Using Harmonic Balance by Pelle Weiler, Bas Vermulst, Erik Lemmen, Korneel Wijnands

“…Averaged loss models often neglect the temperature dependence of transistors, leading to fast, but inaccurate results. …”
Get full text

TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs by Franco Ercolano, Luigi Balestra, Sebastian Krause, Stefano Leone, Isabel Streicher, Patrik Waltereit, Michael Dammann, Susanna Reggiani

“…The long-term reliability of AlGaN/GaN high electron mobility transistors (HEMTs) is a crucial factor in their widespread adoption for high-power and high-frequency applications. …”
Get full text

Gate- and flux-tunable sin(2φ) Josephson element with planar-Ge junctions by Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz, Elyjah Kiyooka, Jean-Michel Hartmann, Frédéric Gustavo, Jean-Luc Thomassin, Boris Brun, Vivien Schmitt, Simon Zihlmann, Romain Maurand, Étienne Dumur, Silvano De Franceschi, François Lefloch

“…Abstract Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with gate-tunable critical current. …”
Get full text

Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures by Dipanjan Sen, Harikrishnan Ravichandran, Mayukh Das, Pranavram Venkatram, Sooho Choo, Shivasheesh Varshney, Zhiyu Zhang, Yongwen Sun, Jay Shah, Shiva Subbulakshmi Radhakrishnan, Akash Saha, Sankalpa Hazra, Chen Chen, Joan M. Redwing, K. Andre Mkhoyan, Venkatraman Gopalan, Yang Yang, Bharat Jalan, Saptarshi Das

“…Our observation includes ultra-fast polarization switching (~10 ns), low switching voltage (<6 V), over 10 years of nonvolatile retention, 100,000 endurance cycles, and 32 conductance states (5-bit memory) in SrTiO3-gated MoS2 transistors at 15 K and up to 100 K. Additionally, we exploit room-temperature weak polarization switching, a feature of incipient ferroelectricity, to construct a physical reservoir for pattern recognition. …”
Get full text

Boron-doped diamond MOSFETs operating at temperatures up to 400°C by Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide

“…The boron-doped diamond (B-diamond) metal-oxide–semiconductor field–effect transistors (MOSFETs) are fabricated and characterized at operating temperatures up to 400°C. …”
Get full text

Design and Implementation of universal converter using ANN controller by K. Suresh, E. Parimalasundar, A. Arunraja, V. Ellappan, Eshetu Tessema Ware

“…Abstract This paper details the hardware implementation of a Universal Converter controlled by an Artificial Neural Network (ANN), utilizing key components such as six Insulated Gate Bipolar Transistors (IGBTs), two inductors, and two capacitors for energy storage and voltage smoothing. …”
Get full text

Recent Advances in Graphene-Assisted Nonlinear Optical Signal Processing by Jian Wang, Xiao Hu

“…The wonderful optical properties of graphene afford multiple functions of graphene based polarizers, modulators, transistors, and photodetectors. So far, the main focus has been on graphene based photonics and optoelectronics devices. …”
Get full text

GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH4)2SX + UV Interface Treatment Technology by Chao-Wei Lin, Hsien-Chin Chiu

“…This study examines the praseodymium-oxide- (Pr2O3-) passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH4)2SX + ultraviolet (UV) illumination. …”
Get full text

Energy-efficient and reliable dual closed-loop DC control system for intelligent electric vehicle charging infrastructure. by Jun Li, Wan Chen, Xiaoqiong Zhu, Baoguo Zang, Cong Zhang, Hengxiao Hu, Ming Zhang, Wenbao Lei

“…The research implements a three-level Pulse Width Modulation (PWM) rectifier with a diode-clamped topology and Insulated-Gate Bipolar Transistors (IGBTs), achieving a power factor of 0.99, a total harmonic distortion (THD) of 1.12%, and an efficiency of 95% through rigorous simulation. …”
Get full text

Hardware Design for Cascade-Structure, Dual-Stage, Current-Limiting, Solid-State DC Circuit Breaker by Can Ding, Yinbo Ji, Zhao Yuan

“…The hardware topology uses a series–parallel configuration of cascaded SCR (thyristors) and MOSFETs (metal oxide semiconductor field-effect transistors) in the transfer branch, which enhances the breaking capacity of the transfer branch. …”
Get full text

An Energy-Efficient Pipeline-SAR ADC Using Linearized Dynamic Amplifiers and Input Buffer in 22nm FDSOI by Bangda Yang, Trevor Caldwell, Anthony Chan Carusone

“…We present a DA that achieves &#x2212;52 dB in total harmonic distortion (THD) through an analog technique by which the expanding and compressing nonlinearities in the input transistors cancel one another. A pipeline-SAR analog-to-digital converter (ADC) incorporating the linearized DA in both the input buffer and the first residue amplifier (RA) stage was designed and fabricated using the GlobalFoundries 22nm fully depleted silicon-on-insulator (FDSOI) process. …”
Get full text