A review of GaN RF devices and power amplifiers for 5G communication applications by Hao Lu, Meng Zhang, Ling Yang, Bin Hou, Rafael Perez Martinez, Minhan Mi, Jiale Du, Longge Deng, Mei Wu, Srabanti Chowdhury, Xiaohua Ma, Yue Hao

“…It encompasses critical issues in advanced device and circuit technology, with a focus on high frequency, high linearity, cost-effective GaN-on-Si high electron mobility transistors (HEMTs), and compact modeling. This work aims to serve as a guide for the utilization of GaN HEMTs in 5G communication applications.…”
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Inelastic resonant tunnelling through adjacent localised electronic states in van der Waals heterostructures by E. E. Vdovin, K. Kapralov, Yu. N. Khanin, A. Margaryan, K. Watanabe, T. Taniguchi, C. Yang, S. V. Morozov, D. A. Svintsov, K. S. Novoselov, D. A. Ghazaryan

“…Here, we use an architecture of gated vertical tunnelling transistors to study a generic phenomenon of electron resonant tunnelling through adjacent localised electronic states in hBN barriers. …”
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Neuromorphic system using capacitor synapses by Reon Oshio, Takumi Kuwahara, Takeru Aoki, Mutsumi Kimura, Yasuhiko Nakashima

“…They are discharged through transistors, and when they fall below the threshold voltage, the output signals are inverted. …”
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On-site biosignal amplification using a single high-spin conjugated polymer by Gao-Yang Ge, Jingcao Xu, Xinyue Wang, Wenxi Sun, Mo Yang, Zi Mei, Xin-Yu Deng, Peiyun Li, Xiran Pan, Jia-Tong Li, Xue-Qing Wang, Zhi Zhang, Shixian Lv, Xiaochuan Dai, Ting Lei

“…Ambipolar organic electrochemical transistors (OECTs) are promising for this purpose due to their high transconductance, low operating voltage, biocompatibility, and suitability for miniaturized amplifier design. …”
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The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO₂/SiO₂ Double-Layer by Miloš Marjanović, Stefan D. Ilić, Sandra Veljković, Nikola Mitrović, Umutcan Gurer, Ozan Yilmaz, Aysegul Kahraman, Aliekber Aktag, Huseyin Karacali, Erhan Budak, Danijel Danković, Goran Ristić, Ercan Yilmaz

“…RADFETs, traditionally fabricated as PMOS transistors with SiO₂, are enhanced by incorporating high-k dielectric materials such as HfO₂ to reduce oxide thickness in modern radiation sensors. …”
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Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices by J. H. Yum, J. Oh, Todd. W. Hudnall, C. W. Bielawski, G. Bersuker, S. K. Banerjee

“…In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2 gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO2 gate stack exhibited high performance and reliability characteristics, including a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.…”
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Memoryless Systems Generate the Class of all Discrete Systems by Erwan Beurier, Dominique Pastor, David I. Spivak

“…Indeed, both modern computers and biological systems can be described in this way, as assemblies of transistors or assemblies of simple cells. The complexity is in the network, i.e., the connection patterns between simple machines. …”
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Semiconducting Carbon Nanotube-Based Nanodevices for Monitoring the Effects of Chlorphenamine on the Activities of Intracellular Ca2+ Stores by Viet Anh Pham Ba, Ngoc Pham Van Bach, Thien Nguyen Luong, Khoa Viet Nguyen

“…We report a flexible and noninvasive method based on field-effect transistors hybridizing semiconducting single-walled carbon nanotubes for monitoring the effects of histamine on Ca2+ release from the intracellular stores of a nonexcitable cell. …”
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Measuring. Monitoring. Management. Control by E.A. Pecherskaya, O.V. Karpanin, D.E. Nelyutskovа, A.M. Metalnikov, U.S. Chikhrina

“…The automated information and measurement system is designed to study various semiconductor components and products, such asintegrated circuits, microcircuits, diodes, transistors, solar cells, zener diodes, charge-coupled devices, solar cells. …”

Implementation of finite state logic machines via the dynamics of atomic systems by Dawit Hiluf Hailu

“…This has led to the exploration of various research paths in search of alternative computing paradigms, such as quantum computing, 3D transistors, molecular logic, and continuous logic. …”
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Quantum mechanical insights into Edge-Dependent electronic properties of phosphorene nanoribbons by Mohammadamir Bazrafshan, Adeleh Vatankhahan, Farhad Khoeini, Omid Farzadian

“…These findings provide insight into the design of phosphorene-based nanodevices, including transistors, sensors, and flexible electronics.…”
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Super-Resolution Raman Spectroscopy by Digital Image Processing by Motohiro Tomita, Hiroki Hashiguchi, Takuya Yamaguchi, Munehisa Takei, Daisuke Kosemura, Atsushi Ogura

“…We conclude that super-resolution Raman spectroscopy is a useful method for evaluating stress in miniaturized state-of-the-art transistors, and we believe that the super-resolution method will soon be a requisite technique.…”
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An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs by Yicong Dong, Eiji Yagyu, Takashi Matsuda, Koon Hoo Teo, Chungwei Lin, Shaloo Rakheja

“…High-electron mobility transistors (HEMTs) employing AlGaN/GaN heterostructures are suitable for high-power and high-frequency applications. …”
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Molecular beam epitaxial In2Te3 electronic devices by Imhwan Kim, Jinseok Ryu, Eunsu Lee, Sangmin Lee, Seokje Lee, Wonwoo Suh, Jamin Lee, Miyoung Kim, Hong seok Oh, Gyu-Chul Yi

“…Abstract We report on the electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In2Te3 grown on hexagonal boron nitride (h-BN) substrates utilizing molecular beam epitaxy (MBE). …”
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A Glitch-Free Novel DET-FF in 22 nm CMOS for Low-Power Application by Sumitra Singar, N. K. Joshi, P. K. Ghosh

“…To control the input loading, the two circuits are merged to share the transistors connected to the input. In the proposed design, we have used an internal dual feedback structure. …”
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Near-Threshold Computing and Minimum Supply Voltage of Single-Rail MCML Circuits by Ruiping Cao, Jianping Hu

“…The relationship between the minimum supply voltage of the SRMCML circuits and the model parameters of MOS transistors is derived, so that the minimum supply voltage can be estimated before circuit designs. …”
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Transient analysis of temporary overvoltage and cable faults in underground medium voltage systems by Ricardo Manuel Arias Velásquez

“…We explore the effects on splices and terminals and discuss the use of insulated-gate bipolar transistors (IGBTs) in transformers, as well as the impact of cable configuration on circulating currents and ferroresonance. …”
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A Review of Non-Uniform Load Distribution and Solutions in Data Centers: Micro-Scale Liquid Cooling and Large-Scale Air Cooling by Yifan Li, Congzhe Zhu, Xiuming Li, Bin Yang

“…Nowadays, the number of transistors on electronic components is increasing exponentially leading to an ultra-high heat flux (10⁶~10⁷ W/m²). …”
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Large-scale high uniform optoelectronic synapses array for artificial visual neural network by Fanqing Zhang, Chunyang Li, Zhicheng Chen, Haiqiu Tan, Zhongyi Li, Chengzhai Lv, Shuai Xiao, Lining Wu, Jing Zhao

“…The highly uniform floating-gate synaptic transistors array were constructed by the wafer-scale grown monolayer molybdenum disulfide with Au nanoparticles (NPs) acting as the electrons capture layers. …”
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Deep learning driven silicon wafer defect segmentation and classification by Rohan Ingle, Aniket K. Shahade, Mayur Gaikwad, Shruti Patil

“…Integrated Circuits are made of various transistors that are embedded on a silicon wafer, these wafers are difficult to process and hence are prone to defects. …”
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