Development of a Bipolar Radio-frequency Power Supply for Structures of Lossless Ion Manipulations by Qing LIU, Run-ze XU, Yun-jing ZHANG, Ling-feng LI, Peng LI

“…In addition, the output stage used a half-bridge circuit with GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) as the core devices. Given the capacitive load characteristics of SLIM, the filter characteristics of a resistor-inductor-capacitor (RLC) circuit were utilized to output bipolar sinusoidal pulse voltages. …”
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Extrapolation of Metal Gate With High-K Spacer in Strained Nanosystem Channel QWB Cylindrical FET for High-Speed Applications by Rasmita Barik, Rudra Sankar Dhar, Kuleen Kumar, Yash Sharma, Amit Banerjee

“…The development of novel strain-engineered channel Cylindrical Gate-All-Around (CGAA) quantum well-barrier (QWB) field-effect transistors (FETs) using high-k gate stacks and metallic gates with varying work functions is analyzed, offering enhanced performance to meet the 1 nm technology node of IRDS 2028. …”
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Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT Under Bias and Temperature Stress by Muhammad Aslam, Shu-Wei Chang, Yi-Ho Chen, Yao-Jen Lee, Yiming Li, Wen-Hsi Lee

“…ABSTRACT Amorphous indium gallium zinc oxide (a-IGZO)-based thin film transistors (TFTs) are increasingly becoming popular because of their potential in futuristic applications, including CMOS technology. …”
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Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content by Jith Sarker, Prachi Garg, Abrar Rauf, Ahsiur Rahman Nirjhar, Hsien‐Lien Huang, Menglin Zhu, A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Hongping Zhao, Jinwoo Hwang, Eric Osei‐Agyemang, Saquib Ahmed, Baishakhi Mazumder

“…Abstract (AlxGa1–x)2O3 is an ultrawide‐bandgap semiconductor with a high critical electric field for next‐generation high‐power transistors and deep‐ultraviolet photodetectors. While (010)‐(AlxGa1–x)2O3 films have been studied, the recent availability of (100), (2¯01)‐Ga2O3 substrates have developed interest in (100), (2¯01)‐(AlxGa1–x)2O3 films. …”
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