An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs by Yicong Dong, Eiji Yagyu, Takashi Matsuda, Koon Hoo Teo, Chungwei Lin, Shaloo Rakheja

“…High-electron mobility transistors (HEMTs) employing AlGaN/GaN heterostructures are suitable for high-power and high-frequency applications. …”
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Molecular beam epitaxial In2Te3 electronic devices by Imhwan Kim, Jinseok Ryu, Eunsu Lee, Sangmin Lee, Seokje Lee, Wonwoo Suh, Jamin Lee, Miyoung Kim, Hong seok Oh, Gyu-Chul Yi

“…Abstract We report on the electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In2Te3 grown on hexagonal boron nitride (h-BN) substrates utilizing molecular beam epitaxy (MBE). …”
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A Glitch-Free Novel DET-FF in 22 nm CMOS for Low-Power Application by Sumitra Singar, N. K. Joshi, P. K. Ghosh

“…To control the input loading, the two circuits are merged to share the transistors connected to the input. In the proposed design, we have used an internal dual feedback structure. …”
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Near-Threshold Computing and Minimum Supply Voltage of Single-Rail MCML Circuits by Ruiping Cao, Jianping Hu

“…The relationship between the minimum supply voltage of the SRMCML circuits and the model parameters of MOS transistors is derived, so that the minimum supply voltage can be estimated before circuit designs. …”
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Modeling Surface Recombination at the p-Type Si/SiO2Interface via Dangling Bond Amphoteric Centers by Moustafa Y. Ghannam, Husain A. Kamal

“…Such a finding provides a firm and plausible interpretation for the double peak surface recombination current measured in gated diodes or gated transistors. Successful fitting is possible between the results of the model and reported experimental curves showing two peaks for surface recombination velocity versus surface potential. …”
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Large-scale high uniform optoelectronic synapses array for artificial visual neural network by Fanqing Zhang, Chunyang Li, Zhicheng Chen, Haiqiu Tan, Zhongyi Li, Chengzhai Lv, Shuai Xiao, Lining Wu, Jing Zhao

“…The highly uniform floating-gate synaptic transistors array were constructed by the wafer-scale grown monolayer molybdenum disulfide with Au nanoparticles (NPs) acting as the electrons capture layers. …”
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Multi-terminal flexible DC grid circuit breaker withstands multi-lightning strike analysis by Yutao Tang, Hongchun Shu, Kai He, Yue Dai, Yu Kuang, Yiming Han, Weijie Lou

“…During multi-lightning strikes, lightning intrusive waves pose a greater threat to the insulation of equipment such as hybrid DC fuses, fast mechanical switches, and insulated gate bipolar transistors. Therefore, this paper establishes a simulation model using the Real-Time Digital Simulator based on the model and parameters of the DCCB in the ± 500 kV Zhangbei HVDC project in China. …”
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Recent Advances in Graphene-Assisted Nonlinear Optical Signal Processing by Jian Wang, Xiao Hu

“…The wonderful optical properties of graphene afford multiple functions of graphene based polarizers, modulators, transistors, and photodetectors. So far, the main focus has been on graphene based photonics and optoelectronics devices. …”
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GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH4)2SX + UV Interface Treatment Technology by Chao-Wei Lin, Hsien-Chin Chiu

“…This study examines the praseodymium-oxide- (Pr2O3-) passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH4)2SX + ultraviolet (UV) illumination. …”
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Boron-doped diamond MOSFETs operating at temperatures up to 400°C by Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide

“…The boron-doped diamond (B-diamond) metal-oxide–semiconductor field–effect transistors (MOSFETs) are fabricated and characterized at operating temperatures up to 400°C. …”
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Design and Implementation of universal converter using ANN controller by K. Suresh, E. Parimalasundar, A. Arunraja, V. Ellappan, Eshetu Tessema Ware

“…Abstract This paper details the hardware implementation of a Universal Converter controlled by an Artificial Neural Network (ANN), utilizing key components such as six Insulated Gate Bipolar Transistors (IGBTs), two inductors, and two capacitors for energy storage and voltage smoothing. …”
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Graphene nanomaterial-based electrochemical biosensors for salivary biomarker detection: A translational approach to oral cancer diagnostics by D. Mahalakshmi, J. Nandhini, G. Meenaloshini, E. Karthikeyan, KK Karthik, J. Sujaritha, Vandhana, V, C. Ragavendran

“…Various electrochemical detection techniques, such as cyclic voltammetry, differential pulse voltammetry, electrochemical impedance spectroscopy, field-effect transistors, amperometry, chronoamperometry, and photoelectrochemical methods, are explored in the context of graphene-based biosensors. …”
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Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks by Xiaoying Tang, Zhiqiang Li, Lang Zeng, Hongwei Zhou, Xiaoxu Cheng, Zhenjie Yao

“…Therefore, this work proposes a machine learning-based device modeling algorithm to capture the complex nonlinear relationship between parameters and electrical characteristics of gate-all-around (GAA) nanowire field-effect transistors (NWFETs) from technology computer-aided design (TCAD) simulation results. …”
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TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs by Franco Ercolano, Luigi Balestra, Sebastian Krause, Stefano Leone, Isabel Streicher, Patrik Waltereit, Michael Dammann, Susanna Reggiani

“…The long-term reliability of AlGaN/GaN high electron mobility transistors (HEMTs) is a crucial factor in their widespread adoption for high-power and high-frequency applications. …”
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Gate- and flux-tunable sin(2φ) Josephson element with planar-Ge junctions by Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz, Elyjah Kiyooka, Jean-Michel Hartmann, Frédéric Gustavo, Jean-Luc Thomassin, Boris Brun, Vivien Schmitt, Simon Zihlmann, Romain Maurand, Étienne Dumur, Silvano De Franceschi, François Lefloch

“…Abstract Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with gate-tunable critical current. …”
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Design of Direct Current Microgrid Converter with Cost-Effective Low-Voltage Battery Storage System by Juraj Tvarožek, Michal Prazenica, Tomáš Paulec, Slavomir Kaščák, Patrik Resutík

“…Changing the switching control scheme of the power transistors makes it possible to reduce the requirements for the driving components used with minimal impact on the power conversion efficiency (Δη 1–4%). …”
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Controllable synthesis of nonlayered high-κ Mn3O4 single-crystal thin films for 2D electronics by Jiashuai Yuan, Chuanyong Jian, Zhihui Shang, Yu Yao, Bicheng Wang, Yixiang Li, Rutao Wang, Zhipeng Fu, Meng Li, Wenting Hong, Xu He, Qian Cai, Wei Liu

“…The material demonstrated a dielectric constant up to 135, an equivalent oxide thickness (EOT) as low as 0.8 nm, and a breakdown field strength (E bd) exceeding 10 MV/cm. MoS2 field-effect transistors (FETs) integrated with Mn3O4 thin films through mechanical stacking method operate under low voltages (<1 V), achieving a near 108 Ion/Ioff ratio and a subthreshold swing (SS) as low as 84 mV/dec. …”
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Anisotropic nonlinear optical responses of Ta2NiS5 flake towards ultrafast logic gates and secure all-optical information transmission by Yan Lei, Gong Ziyao, He Qinyong, Shen Dechao, Ge Anping, Dai Ye, Ma Guohong, Sun Liaoxin, Zhang Saifeng

“…Optical logic gates based on nonlinear optical property of material with ultrafast response speed and excellent computational processing power can break the performance bottleneck of electronic transistors. As one of the layered 2D materials, Ta2NiS5 exhibits high anisotropic mobility, exotic electrical response, and intriguing optical properties. …”
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Design of High Performance Hybrid Type Digital-Feedback Low Drop-Out Regulator Using SSCG Technique by Muhammad Asif, Imran Ali, Danial Khan, Muhammad Riaz Ur Rehman, Younggun Pu, Sang-Sun Yoo, Kang-Yoon Lee

“…The proposed hybrid DF-LDO uses arrays of PMOS transistors in coarse and fine mode whereas in retention mode, only one comparator and NMOS are active and digital controller goes into the sleep mode. …”
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Stability of GaN HEMT Device Under Static and Dynamic Gate Stress by Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu

“…In this work, we investigated the stability of a <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. …”
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