A New Method for the Extraction of Diode Parameters Using a Single Exponential Model by S. Dib, M. De La Bardonnie, A. Khoury, F. Pelanchon, P. Mialhe

“…The method is applied to the characterization of the emitter-base junction of transistors and the results are discussed.…”
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Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor by Yuri D. Ivanov, Kristina A. Malsagova, Tatyana O. Pleshakova, Rafael A. Galiullin, Andrey F. Kozlov, Ivan D. Shumov, Irina A. Ivanova, Alexander I. Archakov, Vladimir P. Popov, Alexander V. Latyshev, Konstantin V. Rudenko, Alexander V. Glukhov

“…This method employs the sensors based on silicon nanowire field-effect transistors with protective layers of high-k dielectrics, whose surface is functionalized with an amino silane. …”
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Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics by Liwei Jin, Zhiqun Cheng, Qingna Wang

“…This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructure high-mobility transistors (HEMTs) on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation frequency. …”
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Electronically Tunable Transimpedance Instrumentation Amplifier Based on OTRA by Rajeshwari Pandey, Neeta Pandey, Sajal K. Paul

“…The amplifier gain can be controlled electronically by implementing resistors using MOS transistors operating in linear region. The circuit can be made fully integrated. …”
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Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs by Myeongsu Chae, Ho-Young Cha, Hyungtak Kim

“…In this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures. …”
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Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer by Boseong Son, Huijin Kim, Young-Woong Lee, Purusottam Reddy Bommireddy, Si-Hyun Park

“…This work represents an important step towards the monolithic integration of LED and transistors for use in active-matrix micro-LED displays.…”
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Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire by Yueh-Han Chuang, Fu-Gow Tarntair, Tzu-Wei Wang, Anoop Kumar Singh, Po-Liang Liu, Dong-Sing Wuu, Hao-Chung Kuo, Xiuling Li, Ray-Hua Horng

“…Enhancement-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were then fabricated with a gate-recessed process, incorporating a 5 µm gate field plate structure. …”
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A Novel LTPS-TFT Pixel Circuit to Compensate the Electronic Degradation for Active-Matrix Organic Light-Emitting Diode Displays by Ching-Lin Fan, Fan-Ping Tseng, Hui-Lung Lai, Bo-Jhang Sun, Kuang-Chi Chao, Yi-Chiung Chen

“…A novel pixel driving circuit for active-matrix organic light-emitting diode (AMOLED) displays with low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) is studied. The proposed compensation pixel circuit is driven by voltage programming scheme, which is composed of five TFTs and one capacitor, and has been certified to provide uniform output current by the Automatic Integrated Circuit Modeling Simulation Program with Integrated Circuit Emphasis (AIM-SPICE) simulator. …”
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A 0.69-mW Subsampling NB-IoT Receiver Employing a Linearized <italic>Q</italic>-Boosted LNA by Hongyu Lu, Ahmed Gharib Gadelkarim, Jiannan Huang, Patrick P. Mercier

“…A direct-coupling derivative superposition technique where low-<inline-formula> <tex-math notation="LaTeX">$V_{t}$ </tex-math></inline-formula> and thick-gate transistors with opposite nonlinear characteristics are combined to improve the measured IIP3 by 7 dB to &#x2212;18 dBm with little NF overhead. …”
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A review of GaN RF devices and power amplifiers for 5G communication applications by Hao Lu, Meng Zhang, Ling Yang, Bin Hou, Rafael Perez Martinez, Minhan Mi, Jiale Du, Longge Deng, Mei Wu, Srabanti Chowdhury, Xiaohua Ma, Yue Hao

“…It encompasses critical issues in advanced device and circuit technology, with a focus on high frequency, high linearity, cost-effective GaN-on-Si high electron mobility transistors (HEMTs), and compact modeling. This work aims to serve as a guide for the utilization of GaN HEMTs in 5G communication applications.…”
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Inelastic resonant tunnelling through adjacent localised electronic states in van der Waals heterostructures by E. E. Vdovin, K. Kapralov, Yu. N. Khanin, A. Margaryan, K. Watanabe, T. Taniguchi, C. Yang, S. V. Morozov, D. A. Svintsov, K. S. Novoselov, D. A. Ghazaryan

“…Here, we use an architecture of gated vertical tunnelling transistors to study a generic phenomenon of electron resonant tunnelling through adjacent localised electronic states in hBN barriers. …”
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Neuromorphic system using capacitor synapses by Reon Oshio, Takumi Kuwahara, Takeru Aoki, Mutsumi Kimura, Yasuhiko Nakashima

“…They are discharged through transistors, and when they fall below the threshold voltage, the output signals are inverted. …”
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The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO₂/SiO₂ Double-Layer by Miloš Marjanović, Stefan D. Ilić, Sandra Veljković, Nikola Mitrović, Umutcan Gurer, Ozan Yilmaz, Aysegul Kahraman, Aliekber Aktag, Huseyin Karacali, Erhan Budak, Danijel Danković, Goran Ristić, Ercan Yilmaz

“…RADFETs, traditionally fabricated as PMOS transistors with SiO₂, are enhanced by incorporating high-k dielectric materials such as HfO₂ to reduce oxide thickness in modern radiation sensors. …”
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Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices by J. H. Yum, J. Oh, Todd. W. Hudnall, C. W. Bielawski, G. Bersuker, S. K. Banerjee

“…In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2 gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO2 gate stack exhibited high performance and reliability characteristics, including a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.…”
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Memoryless Systems Generate the Class of all Discrete Systems by Erwan Beurier, Dominique Pastor, David I. Spivak

“…Indeed, both modern computers and biological systems can be described in this way, as assemblies of transistors or assemblies of simple cells. The complexity is in the network, i.e., the connection patterns between simple machines. …”
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Semiconducting Carbon Nanotube-Based Nanodevices for Monitoring the Effects of Chlorphenamine on the Activities of Intracellular Ca2+ Stores by Viet Anh Pham Ba, Ngoc Pham Van Bach, Thien Nguyen Luong, Khoa Viet Nguyen

“…We report a flexible and noninvasive method based on field-effect transistors hybridizing semiconducting single-walled carbon nanotubes for monitoring the effects of histamine on Ca2+ release from the intracellular stores of a nonexcitable cell. …”
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Measuring. Monitoring. Management. Control by E.A. Pecherskaya, O.V. Karpanin, D.E. Nelyutskovа, A.M. Metalnikov, U.S. Chikhrina

“…The automated information and measurement system is designed to study various semiconductor components and products, such asintegrated circuits, microcircuits, diodes, transistors, solar cells, zener diodes, charge-coupled devices, solar cells. …”

Implementation of finite state logic machines via the dynamics of atomic systems by Dawit Hiluf Hailu

“…This has led to the exploration of various research paths in search of alternative computing paradigms, such as quantum computing, 3D transistors, molecular logic, and continuous logic. …”
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Quantum mechanical insights into Edge-Dependent electronic properties of phosphorene nanoribbons by Mohammadamir Bazrafshan, Adeleh Vatankhahan, Farhad Khoeini, Omid Farzadian

“…These findings provide insight into the design of phosphorene-based nanodevices, including transistors, sensors, and flexible electronics.…”
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Super-Resolution Raman Spectroscopy by Digital Image Processing by Motohiro Tomita, Hiroki Hashiguchi, Takuya Yamaguchi, Munehisa Takei, Daisuke Kosemura, Atsushi Ogura

“…We conclude that super-resolution Raman spectroscopy is a useful method for evaluating stress in miniaturized state-of-the-art transistors, and we believe that the super-resolution method will soon be a requisite technique.…”
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