Showing 201 - 220 results of 332 for search '"transistor"', query time: 0.04s Refine Results
  1. 201

    An efficient Imprecise 4:2 Compressor Using Gate Diffusion Input Supplemented with Dynamic Threshold by Forouzan Bahrami, Nabiollah Shiri, Farshad Pesaran

    Published 2024-02-01
    “…The implementation of this compressor using a 16 nm carbon nanotube field-effect transistor (CNTFET) technology yields a minimum area. …”
    Get full text
    Article
  2. 202

    Nanosensor Data Processor in Quantum-Dot Cellular Automata by Fenghui Yao, Mohamed Saleh Zein-Sabatto, Guifeng Shao, Mohammad Bodruzzaman, Mohan Malkani

    Published 2014-01-01
    “…QCA provides an interesting paradigm for faster speed, smaller size, and lower power consumption in comparison to transistor-based technology, in both communication and computation. …”
    Get full text
    Article
  3. 203

    Study on Single Event Upset and Mitigation Technique in JLTFET-Based 6T SRAM Cell by Aishwarya K, Lakshmi B

    Published 2024-01-01
    “…The effect of single event transient (SET) on 6T SRAM cell employing a 20 nm silicon-based junctionless tunneling field effect transistor (JLTFET) is explored for the first time. …”
    Get full text
    Article
  4. 204

    Analytical subthreshold swing model of junctionless elliptic gate-all-around (GAA) FET by Hakkee Jung

    Published 2024-04-01
    “…An analytical subthreshold swing (SS) model has been presented to determine the SS of an elliptic junctionless gate-all-around field-effect transistor (GAA FET). The analysis of a GAA FET with an elliptic cross-section is essential because it is difficult to manufacture a GAA FET with an accurate circular cross-section during the process. …”
    Get full text
    Article
  5. 205

    Unsupervised Learning in a Ternary SNN Using STDP by Abhinav Gupta, Sneh Saurabh

    Published 2024-01-01
    “…A ternary neuron is implemented using a Dual-Pocket Tunnel Field effect transistor (DP-TFET). The synapse consists of a Magnetic Tunnel Junction (MTJ) with a Heavy Metal (HM) underlayer, allowing for the adjustment of its conductance by directing a current through the HM layer. …”
    Get full text
    Article
  6. 206

    A 32 μm<sup>2</sup> MOS-Based Remote Sensing Temperature Sensor with 1.29 °C Inaccuracy for Thermal Management by Ruohan Yang, Kwabena Oppong Banahene, Bryce Gadogbe, Randall Geiger, Degang Chen

    Published 2025-01-01
    “…Fabricated using the TSMC 180 nm process with a 1.8 V supply, this sensor employs a single diode-connected NMOS transistor, achieving a significant size reduction and improved voltage headroom. …”
    Get full text
    Article
  7. 207

    SnO2 Nanostructure as Pollutant Gas Sensors: Synthesis, Sensing Performances, and Mechanism by Brian Yuliarto, Gilang Gumilar, Ni Luh Wulan Septiani

    Published 2015-01-01
    “…This semiconductor is interesting and worthy of further investigation because of its many uses, for example, as lithium battery electrode, energy storage, catalyst, and transistor, and has potential as a gas sensor. In addition, there has to be a discussion of the use of SnO2 as a pollutant gas sensor especially for waste products such as CO, CO2, SO2, and NOx. …”
    Get full text
    Article
  8. 208

    Monolithically Integrated and Galvanically Isolated GaN Gate Driver by Michael Basler, Richard Reiner, Daniel Grieshaber, Fouad Benkhelifa, Stefan Monch

    Published 2025-01-01
    “…This GaN IC shows the potential to be integrated with the power transistor in the future to provide a highly compact isolated driver solution on chip.…”
    Get full text
    Article
  9. 209

    Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module by Dianhao Zhang, Xiao-guang Huang, Bin-liang Cheng, Neng Zhang

    Published 2020-12-01
    “…Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices. …”
    Get full text
    Article
  10. 210

    An Architecture of 2-Dimensional 4-Dot 2-Electron QCA Full Adder and Subtractor with Energy Dissipation Study by Md. Abdullah-Al-Shafi, Ali Newaz Bahar

    Published 2018-01-01
    “…Quantum-dot cellular automata (QCA) is the beginning of novel technology and is capable of an appropriate substitute for orthodox semiconductor transistor technology in the nanoscale extent. A competent adder and subtractor circuit can perform a substantial function in devising arithmetic circuits. …”
    Get full text
    Article
  11. 211

    Tunable Bandpass Filters With Co-Integrated Isolator and Switching-Off Functionality by Kexin Li, Dimitra Psychogiou

    Published 2025-01-01
    “…The UFS, consists of a transistor-based path and a tunable feedback network, enabling frequency-selective transmission in the forward direction, RF signal cancellation in the reverse direction, and reconfigurability in terms of center frequency and intrinsic switching-off. …”
    Get full text
    Article
  12. 212

    RANCANG BANGUN PROTOTIPE DETEKTOR HUJAN SEDERHANA BERBASIS RAINDROP SENSOR MENGGUNAKAN BUZZER DAN LED by naila fauza

    Published 2021-12-01
    “…Alat detektor hujan ini terdiri atas komponen-komponen elektronika, yaitu raindrop sensor, buzzer, LED, transistor dan sakelar. Selanjutnya, dilakukan pengujian alat secara keseluruhan untuk melihat apakah alat berfungsi sesuai dengan tujuan. …”
    Get full text
    Article
  13. 213

    Soft Error-Tolerant and Highly Stable Low-Power SRAM for Satellite Applications by Jong-Yeob Oh, Sung-Hun Jo

    Published 2025-01-01
    “…As CMOS technology has advanced, the transistor integration density of static random-access memory (SRAM) cells has increased. …”
    Get full text
    Article
  14. 214

    Energy-Efficient Discrete Cosine Transform Architecture Using Reversible Logic for IoT-Enabled Consumer Electronics by Muhammad Awais, Wilayat Khan, Tallha Akram, Yunyoung Nam

    Published 2025-01-01
    “…The proposed 8-point fully parallel DCT leverages a customized datapath based on a standard cell approach, integrating pass transistor logic and a full custom layout in UMC 90 nm CMOS technology. …”
    Get full text
    Article
  15. 215

    Rafraîchir les observatoires par le son by Cécile Regnault, Patrick Romieu

    Published 2016-12-01
    “…From the most notable disruptive innovations dating from the First World War to more seemingly mundane experiments such as the transistor, this article offers a theoretical and methodological look at sound observatories. …”
    Get full text
    Article
  16. 216

    Heterogeneous Integration Technologies for Artificial Intelligence Applications by Madison Manley, Ashita Victor, Hyunggyu Park, Ankit Kaul, Mohanalingam Kathaperumal, Muhannad S. Bakir

    Published 2024-01-01
    “…However, the conventional methods of transistor scaling are not enough to meet the exponential demand for computing power driven by AI. …”
    Get full text
    Article
  17. 217

    Field test of a silicon carbide metro propulsion system with reduced losses and acoustic noise by Martin Lindahl, Torbjörn Trostén, Daniel Jansson, Mikael H Johansson, Erik Velander, Anders Blomberg, Hans‐Peter Nee

    Published 2021-03-01
    “…Abstract Results are reported from a successful field test with a silicon carbide (SiC) metal‐oxide‐semiconductor field‐effect transistor (MOSFET) traction inverter. The train has been operated over a 3‐month period in the Stockholm metro system. …”
    Get full text
    Article
  18. 218

    A compact active planar patch antenna array for sub-6 GHz 5G applications by Farid El Ghaoual, Jamal Zbitou, Mostafa Hefnawi, Aboubakr El Hammoumi

    Published 2025-03-01
    “…To further enhance the system's performance, the antenna array was integrated with a custom-designed power amplifier based on the BFP640ESD bipolar transistor. This integration enabled the achievement of an active antenna circuit, improving both transmission power and overall system efficiency. …”
    Get full text
    Article
  19. 219

    The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module by Shengqi Zhou, Luowei Zhou, Suncheng Liu, Pengju Sun, Quanming Luo, Junke Wu

    Published 2012-01-01
    “…Defect is one of the key factors in reducing the reliability of the insulated gate bipolar transistor (IGBT) module, so developing the diagnostic method for defects inside the IGBT module is an important measure to avoid catastrophic failure and improves the reliability of power electronic converters. …”
    Get full text
    Article
  20. 220

    A Multiplier-Less Discrete Cosine Transform Architecture Using a Majority Logic-Based Approximate Full Adder by Elham Esmaeili, Farshad Pesaran, Nabiollah Shiri

    Published 2024-03-01
    “…The carbon nanotube field-effect transistor (CNTFET) technology lowers the FA power, while the gate diffusion input (GDI) technique is used as the main technique. …”
    Get full text
    Article