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201
An efficient Imprecise 4:2 Compressor Using Gate Diffusion Input Supplemented with Dynamic Threshold
Published 2024-02-01“…The implementation of this compressor using a 16 nm carbon nanotube field-effect transistor (CNTFET) technology yields a minimum area. …”
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202
Nanosensor Data Processor in Quantum-Dot Cellular Automata
Published 2014-01-01“…QCA provides an interesting paradigm for faster speed, smaller size, and lower power consumption in comparison to transistor-based technology, in both communication and computation. …”
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203
Study on Single Event Upset and Mitigation Technique in JLTFET-Based 6T SRAM Cell
Published 2024-01-01“…The effect of single event transient (SET) on 6T SRAM cell employing a 20 nm silicon-based junctionless tunneling field effect transistor (JLTFET) is explored for the first time. …”
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204
Analytical subthreshold swing model of junctionless elliptic gate-all-around (GAA) FET
Published 2024-04-01“…An analytical subthreshold swing (SS) model has been presented to determine the SS of an elliptic junctionless gate-all-around field-effect transistor (GAA FET). The analysis of a GAA FET with an elliptic cross-section is essential because it is difficult to manufacture a GAA FET with an accurate circular cross-section during the process. …”
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205
Unsupervised Learning in a Ternary SNN Using STDP
Published 2024-01-01“…A ternary neuron is implemented using a Dual-Pocket Tunnel Field effect transistor (DP-TFET). The synapse consists of a Magnetic Tunnel Junction (MTJ) with a Heavy Metal (HM) underlayer, allowing for the adjustment of its conductance by directing a current through the HM layer. …”
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206
A 32 μm<sup>2</sup> MOS-Based Remote Sensing Temperature Sensor with 1.29 °C Inaccuracy for Thermal Management
Published 2025-01-01“…Fabricated using the TSMC 180 nm process with a 1.8 V supply, this sensor employs a single diode-connected NMOS transistor, achieving a significant size reduction and improved voltage headroom. …”
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207
SnO2 Nanostructure as Pollutant Gas Sensors: Synthesis, Sensing Performances, and Mechanism
Published 2015-01-01“…This semiconductor is interesting and worthy of further investigation because of its many uses, for example, as lithium battery electrode, energy storage, catalyst, and transistor, and has potential as a gas sensor. In addition, there has to be a discussion of the use of SnO2 as a pollutant gas sensor especially for waste products such as CO, CO2, SO2, and NOx. …”
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208
Monolithically Integrated and Galvanically Isolated GaN Gate Driver
Published 2025-01-01“…This GaN IC shows the potential to be integrated with the power transistor in the future to provide a highly compact isolated driver solution on chip.…”
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209
Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module
Published 2020-12-01“…Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices. …”
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210
An Architecture of 2-Dimensional 4-Dot 2-Electron QCA Full Adder and Subtractor with Energy Dissipation Study
Published 2018-01-01“…Quantum-dot cellular automata (QCA) is the beginning of novel technology and is capable of an appropriate substitute for orthodox semiconductor transistor technology in the nanoscale extent. A competent adder and subtractor circuit can perform a substantial function in devising arithmetic circuits. …”
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211
Tunable Bandpass Filters With Co-Integrated Isolator and Switching-Off Functionality
Published 2025-01-01“…The UFS, consists of a transistor-based path and a tunable feedback network, enabling frequency-selective transmission in the forward direction, RF signal cancellation in the reverse direction, and reconfigurability in terms of center frequency and intrinsic switching-off. …”
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212
RANCANG BANGUN PROTOTIPE DETEKTOR HUJAN SEDERHANA BERBASIS RAINDROP SENSOR MENGGUNAKAN BUZZER DAN LED
Published 2021-12-01“…Alat detektor hujan ini terdiri atas komponen-komponen elektronika, yaitu raindrop sensor, buzzer, LED, transistor dan sakelar. Selanjutnya, dilakukan pengujian alat secara keseluruhan untuk melihat apakah alat berfungsi sesuai dengan tujuan. …”
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213
Soft Error-Tolerant and Highly Stable Low-Power SRAM for Satellite Applications
Published 2025-01-01“…As CMOS technology has advanced, the transistor integration density of static random-access memory (SRAM) cells has increased. …”
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214
Energy-Efficient Discrete Cosine Transform Architecture Using Reversible Logic for IoT-Enabled Consumer Electronics
Published 2025-01-01“…The proposed 8-point fully parallel DCT leverages a customized datapath based on a standard cell approach, integrating pass transistor logic and a full custom layout in UMC 90 nm CMOS technology. …”
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215
Rafraîchir les observatoires par le son
Published 2016-12-01“…From the most notable disruptive innovations dating from the First World War to more seemingly mundane experiments such as the transistor, this article offers a theoretical and methodological look at sound observatories. …”
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216
Heterogeneous Integration Technologies for Artificial Intelligence Applications
Published 2024-01-01“…However, the conventional methods of transistor scaling are not enough to meet the exponential demand for computing power driven by AI. …”
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217
Field test of a silicon carbide metro propulsion system with reduced losses and acoustic noise
Published 2021-03-01“…Abstract Results are reported from a successful field test with a silicon carbide (SiC) metal‐oxide‐semiconductor field‐effect transistor (MOSFET) traction inverter. The train has been operated over a 3‐month period in the Stockholm metro system. …”
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218
A compact active planar patch antenna array for sub-6 GHz 5G applications
Published 2025-03-01“…To further enhance the system's performance, the antenna array was integrated with a custom-designed power amplifier based on the BFP640ESD bipolar transistor. This integration enabled the achievement of an active antenna circuit, improving both transmission power and overall system efficiency. …”
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219
The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module
Published 2012-01-01“…Defect is one of the key factors in reducing the reliability of the insulated gate bipolar transistor (IGBT) module, so developing the diagnostic method for defects inside the IGBT module is an important measure to avoid catastrophic failure and improves the reliability of power electronic converters. …”
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220
A Multiplier-Less Discrete Cosine Transform Architecture Using a Majority Logic-Based Approximate Full Adder
Published 2024-03-01“…The carbon nanotube field-effect transistor (CNTFET) technology lowers the FA power, while the gate diffusion input (GDI) technique is used as the main technique. …”
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