Using artificial intelligence methods for the optimal synthesis of reversible networks by Taras Kyryliuk, Mykhailo Palahuta, Vitaly Deibuk

“…According to Moore's Law, the reduction of transistor sizes to the atomic scale faces physical limits, which complicate further development. …”
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An Improved Prediction Model of IGBT Junction Temperature Based on Backpropagation Neural Network and Kalman Filter by Yu Dou

“…With the rapid development of emerging technologies such as electric vehicles and high-speed railways, the insulated gate bipolar transistor (IGBT) is becoming increasingly important as the core of the power electronic devices. …”
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Design of Binary and Ternary Logic Inverters Based on Silicon Feedback FETs Using TCAD Simulator by Ashkan Horri

“…A feedback field effect transistor (FBFET) with p-n-p-n structure benefits from a positive feedback mechanism. …”
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2.4 GHz CMOS Power Amplifier with Mode-Locking Structure to Enhance Gain by Changhyun Lee, Changkun Park

“…To maximize the advantage of the typical mode-locking method in the cascode structure, the input of the cross-coupled transistor is modified from that of a typical mode-locking structure. …”
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Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision by Zhilin Liu, Mingxiu Liu, Liujian Qi, Nan Zhang, Bin Wang, Xiaojuan Sun, Rongjun Zhang, Dabing Li, Shaojuan Li

“…The polarization arises from hot electron injection caused by the plasmonic metal electrode and is amplified by the transistor to raise the anisotropic ratio from 2 to an impressive value over 60 in the infrared (IR) band, reaching the level of existing applications. …”
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Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral by Hugues Murray, Patrick Martin, Serge Bardy

“…We propose a simple model, derived from Pao-Sah theory, valid in all modes from weak to strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The Pao-Sah double integral is decomposed into single integrals with limits of integration calculated from Taylor polynomials of inverse functions. …”
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Novel level shifter based physical unclonable function circuit design by Lijuan HAN, Lei QIAN, Enyi YAO, Xin LOU, Yuan CAO, Yanhua LIU

“…Level shifters are widely used in low-power, multi-threshold integrated circuit chips.A novel physical unclonable function (PUF) design based on cross-coupled level shifter was proposed.In this work, a single switching transistor was inserted in the level shifter, which was the only overhead per response bit to change the operation mode of the cross-coupled level shifter from differential to common.The signature of the PUF was extracted while in common mode, by exploiting the uncertainty of the output voltage due to the difference of the switching time of the two PMOS in the cross-coupled network.Simulated with a standard 65 nm CMOS process, the results show the proposed PUF can produce a uniqueness of 49.11% and a reliability of 96.09% with the power supply voltage ranged from 1.0 V to 1.5 V and 95.31% with the temperature ranged from -20 ℃ to 100 ℃.The energy per bit is only 0.72 pJ at a high throughput of 20 Mbit/s (1.2 V, 27 ℃).…”
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Junction Parameter Extraction for Electronic Device Characterization by S. Dib, C. Salame, N. Toufik, A. Khoury, F. Pélanchon, P. Mialhe

“…An application, achieved to observe the degradation of the emitter–base junction of a bipolar transistor during an aging experiment, shows that the evolutions of the single exponential model parameters versus time introduce a means for degradation quantification.…”
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Frequency-Based Control Strategy for Compact Electromagnetic Tuned Mass Damper by Semen Kopylov, Zhaobo Chen, Mohamed A. A. Abdelkareem

“…The concept of a controllable system with switched transistor was utilized for the proposed control strategy. …”
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Advanced Rectifier Technologies for Electrolysis-Based Hydrogen Production: A Comparative Study and Real-World Applications by Yan Gao, Xiongzheng Wang, Xin Meng

“…First, the topologies of three rectifiers typically employed in industry—24-pulse thyristor rectifiers, insulated gate bipolar transistor (IGBT) rectifiers, and 24-pulse diode rectifiers with multi-phase choppers—are described in detail. …”
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Radiation Characteristics of 3D Resonant Cavity Antenna with Grid-Oscillator Integrated Inside by L. A. Haralambiev, H. D. Hristov

“…A three-dimensional (3D) rectangular cavity antenna with an aperture size of 80 mm × 80 mm and a length of 16 mm, integrated with a four-MESFET transistor grid-oscillator, is designed and studied experimentally. …”
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An Efficient Approximate Multiplier with Encoded Partial Products and Inexact Counter for Joint Photographic Experts Group Compression by Elham Esmaeili, Nabiollah Shiri

“…The counter and PPG make a new radix-4-based 8 × 8 Booth multiplier, which is synthesized targeting a 32-nm carbon nanotube field-effect transistor (CNTFET) technology to determine the hardware characteristics. …”
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Detailed Analysis of a Regenerative Active Clamping Snubber for a Phase-Shifted Converter by Dorin Petreus, Toma Patarau

“…It determines the conditions for zero voltage turn ON of the snubber transistor thus improving the snubber’s efficiency and of the entire phase-shifted converter. …”
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Ultrawideband LNA 1960–2019: Review by Shahab Shahrabadi

“…Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High‐Electron‐Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic.…”
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Microwave Pioneers: Mau-Chung Frank Chang, “The Power of Connections” by Peter H. Siegel

“…This issue&#x0027;s <italic>Microwave Pioneer</italic> article is about Mau-Chung Frank Chang, who perhaps more than anyone else, is responsible for the widespread commercial use of the heterojunction bipolar transistor (HBT). Professor Chang is also an example of a researcher who very successfully crossed over from industry to academia and from research to management and back, having spent time in charge of a large team of commercial semiconductor fabrication engineers and as President of a major academic university. …”
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Drive Current Enhancement in TFET by Dual Source Region by Zhi Jiang, Yiqi Zhuang, Cong Li, Ping Wang, Yuqi Liu

“…This paper presents tunneling field-effect transistor (TFET) with dual source regions. It explores the physics of drive current enhancement. …”
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An Enhanced Inverter Controller for PV Applications Using the dSPACE Platform by M. A. Hannan, Z. Abd Ghani, A. Mohamed

“…The SPWM signals switch the insulated gate bipolar transistor (IGBT) to stabilize the 50-Hz sinusoidal AC output voltages of the inverter. …”
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A New Simple Chaotic Lorenz-Type System and Its Digital Realization Using a TFT Touch-Screen Display Embedded System by Rodrigo Méndez-Ramírez, Adrian Arellano-Delgado, César Cruz-Hernández, Rigoberto Martínez-Clark

“…Finally, the DV of NCS was implemented, in real-time, by using a novel embedded system (ES) Mikromedia Plus for PIC32MX7 that includes one microcontroller PIC32 and one thin film transistor touch-screen display (TFTTSD), together with external digital-to-analog converters (DACs).…”
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SIMSCAPE Electrical Modelling of the IGBT with Parameter Optimization Using Genetic Algorithm by Mohamed Baghdadi, Elmostafa Elwarraki, Naoual Mijlad, Imane Ait Ayad

“…In this paper, a power insulated-gate bipolar transistor (IGBT) model using MATLAB graphical software is reproduced. …”
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Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation by Gim Heng Tan, Roslina Mohd Sidek, Harikrishnan Ramiah, Wei Keat Chong, De Xing Lioe

“…The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. …”
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