Long‐Channel Effects in Randomly Oriented Carbon Nanotube Thin Film Transistors by Hai‐Yang Liu, Panpan Zhang, Xianmao Cao, Yang Zhang, Jianping He, Maguang Zhu, Mengmeng Xiao, Zhiyong Zhang

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Effect of Gate Length Scaling on Various Performance Parameters in DG-FinFETs: a Simulation Study by Rakesh Vaid, Meenakshi Chandel

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2D ferroelectric AgInP2Se6 for Ultra‐Steep Slope Transistor with SS Below 10 mV Decade−1 by Yujue Yang, Zihao Liu, Xueting Liu, Huafeng Dong, Xin Zhang, Juehan Yang, Fugen Wu, Jingbo Li, Nengjie Huo

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Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit by Weiming Zhang, Jian Zhou, Bing Wang, Yuqi Sun, Zhimei Sun

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Improvements in reliability and radio frequency performance of junctionless tunnelling field effect transistor using p+ pocket and metal strip by Alireza Zirak

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Effects of insertion of an h-AlN monolayer spacer in Pt-WSe2-Pt field-effect transistors by Ken-Ming Lin, Po-Jiun Chen, Chih-Piao Chuu, Yu-Chang Chen

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High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching by Yuan Huang, Eli Sutter, Bruce A. Parkinson, Peter Sutter

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Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors by Fida Ali, Hyungyu Choi, Nasir Ali, Yasir Hassan, Tien Dat Ngo, Faisal Ahmed, Won‐Kyu Park, Zhipei Sun, Won Jong Yoo

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Steep slope threshold switching field‐effect transistors based on 2D heterostructure by Jingyu Mao, Tengyu Jin, Xiangyu Hou, Siew Lang Teo, Ming Lin, Jingsheng Chen, Wei Chen

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Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs by Heyu Liu, Mingyan Wang, Heng Zhou, Guohao Yu, Honghuan Guo, Baoshun Zhang, Peng Cui, Zhaojun Lin

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A novel ultra-steep subthreshold swing iTFET with control gate and control source biasing by Jyi-Tsong Lin, Ruei-Cheng Tu

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Double-gate metal–oxide TFT pixel circuit for improved luminance uniformity of mobile OLED display by YiKyoung You, Kook Chul Moon, HyeongMin Kim, JungSuk Oh, SangWoon Lee, Jun Hyung Lim, Kyoung Seok Son, JaeHyung Cho, KeeChan Park

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Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS₂ Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments by Khalil Tamersit, Abdellah Kouzou, José Rodriguez, Mohamed Abdelrahem

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