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Reflection of circularly polarized light from a CdS semiconductor crystal near the exciton resonance taking into account spatial dispersion
Published 2024-12-01“…The paper presents the results of calculations of the frequency and angular spectra of the ellipsometric parameters of reflected light for a CdS semiconductor crystal near the exciton resonance, taking into account spatial dispersion. …”
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122
A Study of the Talent Training Project Management for Semiconductor Industry in Taiwan: The Application of a Hybrid Data Envelopment Analysis Approach
Published 2014-01-01“…The purpose of this study is to evaluate the training institution performance and to improve the management of the Manpower Training Project (MTP) administered by the Semiconductor Institute in Taiwan. Much literature assesses the efficiency of an internal training program initiated by a firm, but only little literature studies the efficiency of an external training program led by government. …”
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123
DESIGN PRINCIPLES AND BLOCK SCHEMES OF THE PROBE AUTOMATIC INSPECTION SYSTEMS FOR MICROAND NANOELECTRONICS ON A WAFER
Published 2015-04-01Subjects: Get full text
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Ultrasensitive Chemiresistive Gas Sensors Based on Dual-Mesoporous Zinc Stannate Composites for Room Temperature Rice Quality Monitoring
Published 2025-01-01Subjects: Get full text
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Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach
Published 2025-01-01Subjects: Get full text
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127
Elastic Properties and the Band Gap of AlNxP1-x Semiconductor Alloy: A Comparative Study of Various Ab Initio Approaches
Published 2016-01-01“…Structural and elastic properties of AlNxP1-x, a novel semiconductor alloy, are studied from the first principles in both zinc-blende and wurtzite structures. …”
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128
Classification of Silicon (Si) Wafer Material Defects in Semiconductor Choosers using a Deep Learning ShuffleNet-v2-CNN Model
Published 2022-01-01“…The silicon wafer is one of the raw materials used to make semiconductor chipsets. Semiconductor failure or dysfunction could be the result of defects in the layers of this material. …”
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Design of 3‐aminophenol‐grafted polymer‐modified zinc sulphide nanoparticles as drug delivery system
Published 2021-10-01Subjects: Get full text
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131
Improving the Selectivity of Metal Oxide Semiconductor Sensors for Mustard Gas Simulant 2-Chloroethyl Ethyl Sulfide by Combining the Laminated Structure and Temperature Dynamic Modulation
Published 2025-01-01“…Insufficient selectivity is a major constraint to the further development of metal oxide semiconductor (MOS) sensors for chemical warfare agents, and this paper proposed an improved scheme combining catalytic layer/gas-sensitive layer laminated structure with temperature dynamic modulation for the Mustard gas (HD) MOS sensor. …”
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132
Surface Recombination Via Interface Defects in Field Effect Transistors
Published 1998-01-01Subjects: Get full text
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133
Spin‐coating fabrication of high‐yield and uniform organic thin‐film transistors via a primer template growth
Published 2025-01-01Subjects: Get full text
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134
A comprehensive review of yttrium aluminum nitride: crystal structure, growth techniques, properties, and applications
Published 2025-02-01Subjects: Get full text
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135
Terahertz generation from surface of the bulk and monolayer tungsten diselenide
Published 2020-12-01Subjects: “…two dimensional semiconductors…”
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A 22% Efficient Semiconductor/Liquid Junction Solar Cell—the Photoelectrochemical Behavior of n-WSe2 Electrodes in the Presence of I2/I- in Aqueous Electrolyte
Published 1988-01-01“…One of the most efficient semiconductor/liquid-junction photoelectrochemical cells (PEC) reported to date is presented. …”
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139
Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices
Published 2012-01-01“…In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2 gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). …”
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