Showing 81 - 100 results of 685 for search '"semiconductors"', query time: 0.08s Refine Results
  1. 81

    Influence of weak injection on spatiotemporal instabilities in a broad-area vertical-cavity semiconductor laser by E.A. Yarunova, A.A. Krents, N.E. Molevich

    Published 2023-12-01
    “…The dynamics of a broad-area vertical-cavity semiconductor surface-emitting laser (VCSEL) is theoretically investigated with due regard for the Henry factor. …”
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    Article
  2. 82

    Bayesian optimization-driven enhancement of the thermoelectric properties of polycrystalline III-V semiconductor thin films by Takamitsu Ishiyama, Koki Nozawa, Takeshi Nishida, Takashi Suemasu, Kaoru Toko

    Published 2024-03-01
    “…These findings not only promote the development of thermoelectric devices based on III–V semiconductors but also highlight the effectiveness of using Bayesian optimization for multicomponent materials.…”
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    Article
  3. 83

    Sensors on Flapping Wings (SOFWs) Using Complementary Metal–Oxide–Semiconductor (CMOS) MEMS Technology by Lung-Jieh Yang, Wei-Cheng Wang, Chandrashekhar Tasupalli, Balasubramanian Esakki, Mahammed Inthiyaz Shaik

    Published 2025-01-01
    “…Based on the implemented self-heating flow sensor using U18 complementary metal–oxide–semiconductor (CMOS) MEMS foundry provided by the Taiwan Semiconductor Research Institute (TSRI), the compact sensing region of the flow sensor was incorporated for in situ diagnostics of biomimetic flapping issues. …”
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  10. 90

    Dynamics of Photoinduced Charge Carrier and Photothermal Effect in Pulse-Illuminated Narrow Gap and Moderate Doped Semiconductors by Slobodanka Galovic, Katarina Djordjevic, Milica Dragas, Dejan Milicevic, Edin Suljovrujic

    Published 2025-01-01
    “…When a sample of semiconducting material is illuminated by monochromatic light, in which the photon energy is higher than the energy gap of the semiconductor, part of the absorbed electromagnetic energy is spent on the generation of pairs of quasi-free charge carriers that are bound by Coulomb attraction. …”
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    LSTM-based framework for predicting point defect percentage in semiconductor materials using simulated XRD patterns by Mehran Motamedi, Reza Shidpour, Mehdi Ezoji

    Published 2024-10-01
    “…Abstract In this paper, we present a machine learning-based approach that leverages Long Short-Term Memory (LSTM) networks combined with a sliding window technique for feature extraction, aimed at accurately predicting point defect percentages in semiconductor materials based on simulated X-ray Diffraction (XRD) data. …”
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    Comprehension of Postmetallization Annealed MOCVD-TiO2 on (NH4)2S Treated III-V Semiconductors by Ming-Kwei Lee, Chih-Feng Yen

    Published 2012-01-01
    “…The electrical characteristics of TiO2 films grown on III-V semiconductors (e.g., p-type InP and GaAs) by metal-organic chemical vapor deposition were studied. …”
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  18. 98

    A Simple Method to Differentiate between Free-Carrier Recombination and Trapping Centers in the Bandgap of the p-Type Semiconductor by Megersa Wodajo Shura

    Published 2021-01-01
    “…In this research, the ranges of the localized states in which the recombination and the trapping rates of free carriers dominate the entire transition rates of free carriers in the bandgap of the p-type semiconductor are described. Applying the Shockley–Read–Hall model to a p-type material under a low injection level, the expressions for the recombination rates, the trapping rates, and the excess carrier lifetimes (recombination and trapping) were described as functions of the localized state energies. …”
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  19. 99

    Elasto-Thermodiffusion Modeling Using Optoelectronic Microtemperature Processes for a Ramp-Type Heating Nano-Semiconductor Material by M. Adel, Khaled Lotfy, Alaa El-Bary, M. Ahmed

    Published 2024-01-01
    “…The proposed model is put to use in analyzing how ramp-type heating affects an unbounded semiconductor material plane at rest. The discussion section presents a series of graphs to analyze the effect of the main parameters.…”
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  20. 100

    Gas-Solid Reaction Properties of Fluorine Compounds and Solid Adsorbents for Off-Gas Treatment from Semiconductor Facility by Shinji Yasui, Tadashi Shojo, Goichi Inoue, Kunihiko Koike, Akihiro Takeuchi, Yoshio Iwasa

    Published 2012-01-01
    “…We have been developing a new dry-type off-gas treatment system for recycling fluorine from perfluoro compounds present in off-gases from the semiconductor industry. The feature of this system is to adsorb the fluorine compounds in the exhaust gases from the decomposition furnace by using two types of solid adsorbents: the calcium carbonate in the upper layer adsorbs HF and converts it to CaF2, and the sodium bicarbonate in the lower layer adsorbs HF and SiF4 and converts them to Na2SiF6. …”
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