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  1. 681

    Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communicati... by Gauri Deshpande, J. Ajayan, Sandip Bhattacharya, B. Mounika, Amit Krishna Dwivedi, D. Nirmal

    Published 2025-03-01
    “…An innovative GaN-channel MOSHEMT (Metal-oxide-semiconductor-high-electron-mobility-transistor) featuring AlGaN aback barrier and AlN barrier is reported. …”
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