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Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communicati...
Published 2025-03-01“…An innovative GaN-channel MOSHEMT (Metal-oxide-semiconductor-high-electron-mobility-transistor) featuring AlGaN aback barrier and AlN barrier is reported. …”
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