A Comparative Analysis of Laser-Ablated Surface Characteristics Between the Si Face and C Face of Silicon Carbide Substrates by Hsin-Yi Tsai, Yu-Hsuan Lin, Kuo-Cheng Huang, J. Andrew Yeh, Yi Yang, Chien-Fang Ding

“…Silicon carbide (SiC) has significant potential as a third-generation semiconductor material due to its exceptional thermal and electronic properties, yet its high hardness and brittleness make processing costly and complex. …”
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The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications by Qian Yu, Sheng Wu, Meng Zhang, Ling Yang, Xu Zou, Hao Lu, Chunzhou Shi, Wenze Gao, Mei Wu, Bin Hou, Gang Qiu, Xiaoning He, Xiaohua Ma, Yue Hao

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Photocatalytic Degradation of E.Coli Bacteria by Graphitic Carbon Nitride Photocatalysts under Visible Light Irradiation by Zahra Ahmadi Panah, Reyhaneh Dehghan, Mehran Bijari, Afsaneh Shahbazi

“…Graphitic carbon nitride, as a polymeric semiconductor, has attracted significant attention in this field. …”
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Plasmonically-enhanced reconfigurable photodetector based on graphene/Sb2S3 heterojunction by Xiaojuan Lian, Shiyu Li, Jiyuan Jiang, Wen Huang, Nan He, Xiaoyan Liu, Jie Wu, Zhou Wang, Gangyi Zhu, Lei Wang

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Insulator–metal transition in VO2 film on sapphire studied by broadband dielectric spectroscopy by Arsenii A. Gavdush, Vladislav A. Zhelnov, Kirill B. Dolganov, Alexander A. Bogutskii, Sergey V. Garnov, Maria G. Burdanova, Dmitry S. Ponomarev, Qiwu Shi, Kirill I. Zaytsev, Gennadii A. Komandin

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An impermeable copper surface monolayer with high-temperature oxidation resistance by Su Jae Kim, Young-Hoon Kim, Bipin Lamichhane, Binod Regmi, Yousil Lee, Sang-Hyeok Yang, Seon Je Kim, Min-Hyoung Jung, Jae Hyuck Jang, Hu Young Jeong, Miaofang Chi, Maeng-Je Seong, Hak Soo Choi, Seong-Gon Kim, Young-Min Kim, Se-Young Jeong

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A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOS by Rui Ma, Florian Protze, Frank Ellinger

“…Abstract This work investigates a 5.5–7.5‐GHz band‐configurable duty‐cycled wake‐up receiver (WuRX) fully implemented in a 45‐nm radio‐frequency (RF) silicon‐on‐insulator (SOI) complementary‐metal‐oxide‐semiconductor (CMOS) technology. Based on an uncertain intermediate frequency (IF) super‐heterodyne receiver (RX) topology, the WuRX analogue front‐end (AFE) incorporates a 5.5–7.5‐GHz band‐tunable low‐power low‐noise amplifier, a low‐power Gilbert mixer, a digitally controlled oscillator (DCO), a 100‐MHz IF band‐pass filter (BPF), an envelope detector, a comparator, a pulse generator and a current reference. …”
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Unveiling the Electrocatalytic Performances of the Pd-MoS₂ Catalyst for Methanol-Mediated Overall Water Splitting by Aviraj M. Teli, Sagar M. Mane, Rajneesh Kumar Mishra, Wookhee Jeon, Jae Cheol Shin

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Alteration of Mastication Force via Intraoral Closed-Loop Electrical Stimulation by Junxiang Zheng, Bing Jiang, Saurabh Biswas, Su Young Lee, Erin Ealba Bumann, Teresa E. Lever, Jeonghee Kim, Hangue Park

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Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress by Shahid Makhdoom, Na Ren, Ce Wang, Yiding Wu, Hongyi Xu, Jiakun Wang, Kuang Sheng

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Low Thermal Resistance of Diamond‐AlGaN Interfaces Achieved Using Carbide Interlayers by Henry T. Aller, Thomas W. Pfeifer, Abdullah Mamun, Kenny Huynh, Marko Tadjer, Tatyana Feygelson, Karl Hobart, Travis Anderson, Bradford Pate, Alan Jacobs, James Spencer Lundh, Mark Goorsky, Asif Khan, Patrick Hopkins, Samuel Graham

“…This study provides a foundation for future research in improving thermal properties of semiconductor devices through interface engineering and advanced measurement methodologies.…”
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Polyoxovanadate-modified SnO2 electron transport layer for perovskite photodetectors by Ziting Liu, Yijia Hao, Jing Zhang, Yi He, Weilin Chen

“…Polyoxovanadates (POVs), as semiconductor-like molecules, exhibit good redox and excellent optical properties, which can regulate the energy band structure of SnO2. …”
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Target Detection Using Fused Unidentical Photonics-Based LFM Sub-Band Radar Signals With an Adaptive Feed Forward Network Equalizer by Bikash Nakarmi, S. M. Rezwanul Islam, Hum Nath Parajuli, Ikechi Augustine Ukaegbu, Aigerim Ashimbayeva, Carlo Molardi, T. D. Subash, Xiangchuan Wang, Shilong Pan

“…We demonstrate this using optical injection in a semiconductor laser to generate Ph-LFM signals at different IEEE X-KA radar sub-bands: 19.25–23.94 GHz and 24.06–28.31 GHz (bandgap 0.12 GHz), 19.69–23.06 GHz and 23.625–27 GHz (bandgap 0.56 GHz), and 8–11.5 GHz and 12.75–17 GHz (bandgap 1.25 GHz). …”
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Dye-based fluorescent organic nanoparticles made from polar and polarizable chromophores for bioimaging purposes: a bottom-up approach by Daniel, Jonathan, Dal Pra, Ophélie, Kurek, Eleonore, Grazon, Chloé, Blanchard-Desce, Mireille

“…Among them luminescent metal-, semiconductor- or oxide-based “hard” nanoparticles have been the most widely used. …”
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Heterogeneous integration of amorphous silicon carbide on thin film lithium niobate by Zizheng Li, Naresh Sharma, Bruno Lopez-Rodriguez, Roald van der Kolk, Thomas Scholte, Hugo Voncken, Jasper van der Boom, Simon Gröblacher, Iman Esmaeil Zadeh

“…Despite numerous demonstrations of high-performance LN photonics, processing lithium niobate remains challenging and suffers from incompatibilities with standard complementary metal–oxide–semiconductor (CMOS) fabrication lines, limiting its scalability. …”
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Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates by Pieter Cardinael, Sachin Yadav, Bertrand Parvais, Jean-Pierre Raskin

“…With the help of a simplified TCAD model of the GaN-on-Si stack, we link this behavior to slow charge redistribution in the C-doped buffer continuously modifying the flat-band voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\text {FB}}$ </tex-math></inline-formula>) of the Metal-Insulator-Semiconductor (MIS) structure. Free carrier transport across the buffer is shown to have the greatest contribution on the large time constants, highlighting the importance of vertical transport paths in GaN-on-Si stacks.…”
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Monodispersed Iron Selenide Nanoparticles United with Carbon Nanotubes for Highly Reversible Zinc–Air Batteries by Hua Zhang, Tong Zeng, Jiale Ma, Yue Jiang, Yang Huang, Yuxin Cheng, Haifeng Ye, Cuiyun Zeng, Chenghui Zeng, Minshen Zhu, Shuiliang Chen

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Smart Driving Hardware Augmentation by Flexible Piezoresistive Sensor Matrices with Grafted‐on Anticreep Composites by Kaifeng Chen, Hua Yang, Ang Wang, Linsen Tang, Xin Zha, Ndeutala Selma Iita, Hong Zhang, Zhuoxuan Li, Xinyu Wang, Wei Yang, Shaoxing Qu, Zongrong Wang

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g-C₃N₄ Modified with Metal Sulfides for Visible-Light-Driven Photocatalytic Degradation of Organic Pollutants by Shoaib Mukhtar, Erzsébet Szabó-Bárdos, Csilla Őze, Tatjána Juzsakova, Kornél Rácz, Miklós Németh, Ottó Horváth

“…Graphitic carbon nitride (g-C₃N₄) proved to be a promising semiconductor for the photocatalytic degradation of various organic pollutants. …”
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EV Hybrid Battery With Integrated Multilevel Neutral-Point-Clamped Interfacing and Lossless Intermodule State-of-Charge Balancing by Gabriel Garcia-Rojas, Sergio Busquets-Monge, Alber Filba-Martinez, Turev Sarikurt, Salvador Alepuz, Josep Bordonau

“…Overall, the proposed approach enables a modular and scalable design of the energy storage system for a wide range of electric vehicles, from only two different standard battery modules and a standard power semiconductor device, while optimizing the battery size for any given battery power and energy specification. …”
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