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  1. 581

    An instruction dataset for extracting quantum cascade laser properties from scientific textDataverse by Deperias Kerre, Anne Laurent, Kenneth Maussang, Dickson Owuor

    Published 2025-02-01
    “…Quantum Cascade Lasers (QCL) are promising semiconductor lasers, compact and powerful, but of complex design. …”
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    Article
  2. 582

    Insights on nitrogen/oxygen dual defects synergistic modulated charge transfer across the g-C3N4/TiO2-NTAs heterojunction enhanced photodegradation and gas-sensing performances by Zhufeng Shao, Lue Zhan, Yiman Zhang, Yonglong Zhang, Guoyang Yu, Yunfei Song, Xiaoming Xiu

    Published 2025-01-01
    “…The PEC activity of these nanohybrids is notably superior to that of their semiconductor counterparts, primarily due to the synergistic coupling of strong heterojunction interfaces and abundant surface defects. …”
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    Article
  3. 583

    Lead Telluride Doped with Au as a Very Promising Material for Thermoelectric Applications by Pantelija M. Nikolic, Konstantinos M. Paraskevopoulos, Triantafyllia T. Zorba, Zorka Z. Vasiljevic, Eleni Pavlidou, Stevan S. Vujatovic, Vladimir Blagojevic, Obrad S. Aleksic, Aleksandar I. Bojicic, Maria V. Nikolic

    Published 2015-01-01
    “…Both methods confirmed that when PbTe was doped with 3.3 at% Au, thermoelectric and electrical properties of this doped semiconductor were both significantly improved, so Au as a dopant in PbTe could be used as a new high quality thermoelectric material.…”
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    Article
  4. 584

    Evaluation of Antimony Tri-Iodide Crystals for Radiation Detectors by Toshiyuki Onodera, Koei Baba, Keitaro Hitomi

    Published 2018-01-01
    “…SbI3 is a compound semiconductor with an AsI3-type crystal structure, high atomic number (Sb: 51, I: 53), high density (4.92 g/cm3), and a wide band-gap energy (2.2 eV). …”
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    Article
  5. 585

    Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks by Xiaoying Tang, Zhiqiang Li, Lang Zeng, Hongwei Zhou, Xiaoxu Cheng, Zhenjie Yao

    Published 2024-01-01
    “…Engineers used TCAD tools for semiconductor devices modeling. However, it is computationally expensive and time-consuming for advanced devices with smaller dimensions. …”
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    Article
  6. 586

    Studies on Characterization, Optical Absorption, and Photoluminescence of Yttrium Doped ZnS Nanoparticles by Ranganaik Viswanath, Halehatty Seethya Bhojya Naik, Yashavanth Kumar Gubbihally Somalanaik, Prashanth Kumar Parlesed Neelanjeneallu, Khandugadahalli Nagarajappa Harish, Mustur Channabasappa Prabhakara

    Published 2014-01-01
    “…The UV-visible spectra of ZnS and ZnS:Y nanoparticles showed a band gap energy value, 3.85 eV and 3.73 eV, which corresponds to a semiconductor material. A luminescence characteristics such as strong and stable visible-light emissions in the orange region alone with the blue emission peaks were observed for doped ZnS nanoparticles at room temperature. …”
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    Article
  7. 587

    Hydrothermal Synthesis and Responsive Characteristics of Hierarchical Zinc Oxide Nanoflowers to Sulfur Dioxide by Qu Zhou, Bo Xie, Lingfeng Jin, Weigen Chen, Jian Li

    Published 2016-01-01
    “…The sensing performances of semiconductor gas sensors can be improved by morphology tailoring. …”
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    Article
  8. 588

    A high speed processor for elliptic curve cryptography over NIST prime field by Xianghong Hu, Xueming Li, Xin Zheng, Yuan Liu, Xiaoming Xiong

    Published 2022-07-01
    “…On a 55 nm complementary metal oxide semiconductor application specific integrated circuit platform, the processor costs 463k gates and requires 0.028 ms for one SM. …”
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    Article
  9. 589

    Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes by I. E. Paulauskas, G. E. Jellison, L. A. Boatner, G. M. Brown

    Published 2011-01-01
    “…Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with the significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. …”
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    Article
  10. 590

    Dynamic Modeling of Stress-Induced Defect Expansion in VCSELs by Yuqi Zhang, Xun Li, Jia Zhao

    Published 2024-01-01
    “…Many failures of semiconductor-based oxide confined vertical cavity surface emitting lasers (VCSELs) are closely related to the generation and expansion of defects in the device structure. …”
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    Article
  11. 591

    Time-resolved momentum microscopy with fs-XUV photons at high repetition rates with flexible energy and time resolution by Karl Jakob Schiller, Lasse Sternemann, Matija Stupar, Alan Omar, Martin Hoffmann, Jonah Elias Nitschke, Valentin Mischke, David Maximilian Janas, Stefano Ponzoni, Giovanni Zamborlini, Clara Jody Saraceno, Mirko Cinchetti

    Published 2025-01-01
    “…We show the capabilities of the system by tracing ultrafast electron dynamics in the conduction band valleys of a bulk crystal of the 2D semiconductor WS2. Using uncompressed driving laser pulses, we demonstrate an energy resolution better than (107 ± 2) meV, while compressed pulses lead to a time resolution better than (48.8 ± 17) fs.…”
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    Article
  12. 592

    Electric-field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling by Dariusz Sztenkiel, Katarzyna Gas, Nevill Gonzalez Szwacki, Marek Foltyn, Cezary Śliwa, Tomasz Wojciechowski, Jarosław Z. Domagala, Detlef Hommel, Maciej Sawicki, Tomasz Dietl

    Published 2025-01-01
    “…Interestingly, our observations are similar to those reported for another dilute ferromagnetic semiconductor Cr x (Bi1−y Sb y )1−x Te3, in which magnetization was monitored as a function of the gate electric field. …”
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    Article
  13. 593

    Progress in the Sputtering Preparation of Hf0.5Zr0.5O2 Ferroelectric Films and Memories by Kun Chen, Dan Zheng, Jie Gao, Hao Wang, Baoyuan Wang

    Published 2025-02-01
    “…Due to its compatibility with complementary metal oxide semiconductor, high coercivity voltage and the fact that ultrathin films remain ferroelectric, it is developed for applications in non‐volatile memories for data storage in different polarization states. …”
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    Article
  14. 594

    Gate- and flux-tunable sin(2φ) Josephson element with planar-Ge junctions by Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz, Elyjah Kiyooka, Jean-Michel Hartmann, Frédéric Gustavo, Jean-Luc Thomassin, Boris Brun, Vivien Schmitt, Simon Zihlmann, Romain Maurand, Étienne Dumur, Silvano De Franceschi, François Lefloch

    Published 2025-01-01
    “…Abstract Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with gate-tunable critical current. …”
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    Article
  15. 595

    Three-dimensional direct lithography of stable quantum dots in hybrid glass by Dezhi Zhu, Shangben Jiang, Ying Wang, Dejun Liu, Weijia Bao, Liwei Liu, Junle Qu, Yiping Wang, Changrui Liao

    Published 2025-01-01
    “…Semiconductor quantum dots (QDs), as high-performance materials, play an essential role in contemporary industry, mainly due to their high photoluminescent quantum yield, wide absorption characteristics, and size-dependent light emission. …”
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  16. 596

    Revised direct bandgap and band parameters for AlP: hybrid-functional first-principles calculations vs experiment by Cónal Murphy, Eoin P. O’Reilly, Christopher A. Broderick

    Published 2025-01-01
    “…Despite its relevance to the development of quantum-confined heterostructures for classical and quantum applications, there is significant uncertainty regarding several key band parameters for the indirect-gap III–V semiconductor AlP. Critically, using hybrid-functional first-principles calculations, we find that the Γ6c–Γ8v bandgap is ∼1 eV larger than the widely assumed value of 3.63 eV. …”
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    Article
  17. 597

    Boron-doped diamond MOSFETs operating at temperatures up to 400°C by Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide

    Published 2025-12-01
    “…The boron-doped diamond (B-diamond) metal-oxide–semiconductor field–effect transistors (MOSFETs) are fabricated and characterized at operating temperatures up to 400°C. …”
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    Article
  18. 598

    Enhanced solar hydrogen production via reconfigured semi-polar facet/cocatalyst heterointerfaces in GaN/Si photocathodes by Wei Chen, Danhao Wang, Weiyi Wang, Xin Liu, Yuying Liu, Chao Wang, Yang Kang, Shi Fang, Xudong Yang, Wengang Gu, Dongyang Luo, Yuanmin Luo, Zongtao Qu, Chengjie Zuo, Yi Kang, Lin Cheng, Wensheng Yan, Wei Hu, Ran Long, Jr-Hau He, Kang Liang, Sheng Liu, Yujie Xiong, Haiding Sun

    Published 2025-01-01
    “…Specifically, by tailoring the GaN nanowires via a simple alkaline-etching step to expose the inner (10 $$\bar{1}\bar{1}$$ 1 ¯ 1 ¯ ) facets, we achieve a highly coupled semiconductor nanowire-cocatalyst heterointerface with strong electron interaction. …”
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    Article
  19. 599

    Effects of Low-Intensity Laser Irradiation on Wound Healing in Diabetic Rats by Hui Ma, Ying-xin Li, Hong-li Chen, Mei-ling Kang, Timon Cheng-Yi Liu

    Published 2012-01-01
    “…The effects of low-intensity 630 nm semiconductor laser irradiation at 3.6 J/cm2 (LISL) on wound healing in diabetic rats were studied in this paper. …”
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  20. 600

    Dye-Sensitized Solar Cells Prepared with Mexican Pre-Hispanic Dyes by Mario Alberto Sánchez-García, Xim Bokhimi, Sergio Velázquez Martínez, Antonio Esteban Jiménez-González

    Published 2018-01-01
    “…In this study, both dyes are used to sensitize the mesoporous TiO2m semiconductor to prepare DSSCs.…”
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    Article