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581
An instruction dataset for extracting quantum cascade laser properties from scientific textDataverse
Published 2025-02-01“…Quantum Cascade Lasers (QCL) are promising semiconductor lasers, compact and powerful, but of complex design. …”
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582
Insights on nitrogen/oxygen dual defects synergistic modulated charge transfer across the g-C3N4/TiO2-NTAs heterojunction enhanced photodegradation and gas-sensing performances
Published 2025-01-01“…The PEC activity of these nanohybrids is notably superior to that of their semiconductor counterparts, primarily due to the synergistic coupling of strong heterojunction interfaces and abundant surface defects. …”
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583
Lead Telluride Doped with Au as a Very Promising Material for Thermoelectric Applications
Published 2015-01-01“…Both methods confirmed that when PbTe was doped with 3.3 at% Au, thermoelectric and electrical properties of this doped semiconductor were both significantly improved, so Au as a dopant in PbTe could be used as a new high quality thermoelectric material.…”
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584
Evaluation of Antimony Tri-Iodide Crystals for Radiation Detectors
Published 2018-01-01“…SbI3 is a compound semiconductor with an AsI3-type crystal structure, high atomic number (Sb: 51, I: 53), high density (4.92 g/cm3), and a wide band-gap energy (2.2 eV). …”
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585
Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks
Published 2024-01-01“…Engineers used TCAD tools for semiconductor devices modeling. However, it is computationally expensive and time-consuming for advanced devices with smaller dimensions. …”
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586
Studies on Characterization, Optical Absorption, and Photoluminescence of Yttrium Doped ZnS Nanoparticles
Published 2014-01-01“…The UV-visible spectra of ZnS and ZnS:Y nanoparticles showed a band gap energy value, 3.85 eV and 3.73 eV, which corresponds to a semiconductor material. A luminescence characteristics such as strong and stable visible-light emissions in the orange region alone with the blue emission peaks were observed for doped ZnS nanoparticles at room temperature. …”
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587
Hydrothermal Synthesis and Responsive Characteristics of Hierarchical Zinc Oxide Nanoflowers to Sulfur Dioxide
Published 2016-01-01“…The sensing performances of semiconductor gas sensors can be improved by morphology tailoring. …”
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588
A high speed processor for elliptic curve cryptography over NIST prime field
Published 2022-07-01“…On a 55 nm complementary metal oxide semiconductor application specific integrated circuit platform, the processor costs 463k gates and requires 0.028 ms for one SM. …”
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589
Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes
Published 2011-01-01“…Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with the significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. …”
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590
Dynamic Modeling of Stress-Induced Defect Expansion in VCSELs
Published 2024-01-01“…Many failures of semiconductor-based oxide confined vertical cavity surface emitting lasers (VCSELs) are closely related to the generation and expansion of defects in the device structure. …”
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591
Time-resolved momentum microscopy with fs-XUV photons at high repetition rates with flexible energy and time resolution
Published 2025-01-01“…We show the capabilities of the system by tracing ultrafast electron dynamics in the conduction band valleys of a bulk crystal of the 2D semiconductor WS2. Using uncompressed driving laser pulses, we demonstrate an energy resolution better than (107 ± 2) meV, while compressed pulses lead to a time resolution better than (48.8 ± 17) fs.…”
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592
Electric-field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling
Published 2025-01-01“…Interestingly, our observations are similar to those reported for another dilute ferromagnetic semiconductor Cr x (Bi1−y Sb y )1−x Te3, in which magnetization was monitored as a function of the gate electric field. …”
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593
Progress in the Sputtering Preparation of Hf0.5Zr0.5O2 Ferroelectric Films and Memories
Published 2025-02-01“…Due to its compatibility with complementary metal oxide semiconductor, high coercivity voltage and the fact that ultrathin films remain ferroelectric, it is developed for applications in non‐volatile memories for data storage in different polarization states. …”
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594
Gate- and flux-tunable sin(2φ) Josephson element with planar-Ge junctions
Published 2025-01-01“…Abstract Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with gate-tunable critical current. …”
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595
Three-dimensional direct lithography of stable quantum dots in hybrid glass
Published 2025-01-01“…Semiconductor quantum dots (QDs), as high-performance materials, play an essential role in contemporary industry, mainly due to their high photoluminescent quantum yield, wide absorption characteristics, and size-dependent light emission. …”
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596
Revised direct bandgap and band parameters for AlP: hybrid-functional first-principles calculations vs experiment
Published 2025-01-01“…Despite its relevance to the development of quantum-confined heterostructures for classical and quantum applications, there is significant uncertainty regarding several key band parameters for the indirect-gap III–V semiconductor AlP. Critically, using hybrid-functional first-principles calculations, we find that the Γ6c–Γ8v bandgap is ∼1 eV larger than the widely assumed value of 3.63 eV. …”
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597
Boron-doped diamond MOSFETs operating at temperatures up to 400°C
Published 2025-12-01“…The boron-doped diamond (B-diamond) metal-oxide–semiconductor field–effect transistors (MOSFETs) are fabricated and characterized at operating temperatures up to 400°C. …”
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598
Enhanced solar hydrogen production via reconfigured semi-polar facet/cocatalyst heterointerfaces in GaN/Si photocathodes
Published 2025-01-01“…Specifically, by tailoring the GaN nanowires via a simple alkaline-etching step to expose the inner (10 $$\bar{1}\bar{1}$$ 1 ¯ 1 ¯ ) facets, we achieve a highly coupled semiconductor nanowire-cocatalyst heterointerface with strong electron interaction. …”
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599
Effects of Low-Intensity Laser Irradiation on Wound Healing in Diabetic Rats
Published 2012-01-01“…The effects of low-intensity 630 nm semiconductor laser irradiation at 3.6 J/cm2 (LISL) on wound healing in diabetic rats were studied in this paper. …”
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600
Dye-Sensitized Solar Cells Prepared with Mexican Pre-Hispanic Dyes
Published 2018-01-01“…In this study, both dyes are used to sensitize the mesoporous TiO2m semiconductor to prepare DSSCs.…”
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