A Single Switch High Step-Up DC-DC Converter Based on Tri-Winding Coupled Inductor for Renewable Energy Applications by Mana Hosseinzadehlish, Seyed Majid Hashemzadeh, Saeed Pourjafar, Ebrahim Babaei

“…Highefficiency, operating with low duty cycle, low peak voltage over semiconductor elements, low turns ratio, the number of the coupled inductor, and high voltage conversion ratio are the significant benefits of the recommended DC-DC converter. …”
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Scanning microwave impedance microscopy and its applications: A review by Diego Tami, Douglas A. A. Ohlberg, Cássio Gonçalves do Rego, Gilberto Medeiros-Ribeiro, Jhonattan C. Ramirez

“…This review highlights sMIM’s wide-ranging applications, from material science and semiconductor diagnostics to biological systems, showcasing its ability to perform non-destructive, high-resolution imaging down to the single-digit nanometer scale. …”
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Cadmium Sulfide Nanoparticles Synthesized by Microwave Heating for Hybrid Solar Cell Applications by Claudia Martínez-Alonso, Carlos A. Rodríguez-Castañeda, Paola Moreno-Romero, C. Selene Coria-Monroy, Hailin Hu

“…The results of this work suggest that the reactant sources in microwave methods can affect the physicochemical properties of the obtained inorganic semiconductor nanoparticles, which finally influenced the photovoltaic performance of related hybrid solar cells.…”
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FPGACam: A FPGA based efficient camera interfacing architecture for real time video processing by Sayantam Sarkar, Satish S. Bhairannawar, Raja K.B.

“…In this paper, we propose an efficient FPGA‐based low cost Complementary Metal Oxide Semiconductor (CMOS) camera interfacing architecture for live video streaming and processing applications. …”
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Hybrid Hamiltonian Simulation Approach for the Analysis of Quantum Error Correction Protocol Robustness by Benjamin Gys, Lander Burgelman, Kristiaan De Greve, Georges Gielen, Francky Catthoor

“…The development of future full-scale quantum computers (QCs) not only comprises the design of good quality qubits, but also entails the design of classical complementary metal–oxide semiconductor (CMOS) control circuitry and optimized operation protocols. …”
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Extreme Electron‐Photon Interaction in Disordered Perovskites by Sergey S. Kharintsev, Elina I. Battalova, Ivan A. Matchenya, Albert G. Nasibulin, Alexander A. Marunchenko, Anatoly P. Pushkarev

“…In this paper, a new strategy based on both cases for the light‐matter‐interaction enhancement in a direct bandgap semiconductor – lead halide perovskite CsPbBr3 – by using electric pulse‐driven structural disorder, is addressed. …”
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VO2 based polarization-independent dual-wavelength plasmonic switches using U and C shaped nanostructures by Kirti Dalal, Yashna Sharma

“…The switching mechanism is based on the transformation of the phase change material, VO2, from its monoclinic semiconductor state to its tetragonal metal state when exposed to an external stimulus. …”
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Synthesis, Characterization, and Low Temperature Sintering of Nanostructured BaWO4 for Optical and LTCC Applications by S. Vidya, Sam Solomon, J. K. Thomas

“…The basic optical properties and optical constants of the nano BaWO4 are studied using UV-visible absorption spectroscopy which showed that the material is a wide band gap semiconductor with band gap of 4.1 eV. The sample shows poor transmittance in ultraviolet region while maximum in visible-near infrared regions. …”
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Chemiluminescence of Mn-Doped ZnS Nanocrystals Induced by Direct Chemical Oxidation and Ionic Liquid-Sensitized Effect as an Efficient and Green Catalyst by Seyed Naser Azizi, Mohammad Javad Chaichi, Parmis Shakeri, Ahmadreza Bekhradnia, Mehdi Taghavi, Mousa Ghaemy

“…The CL properties of QDs not only will be helpful to study physical chemistry properties of semiconductor nanocrystals but also they are expected to find use in many fields such as luminescence devices, bioanalysis, and multicolor labeling probes.…”
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Reliable SRAM using NAND‐NOR Gate in beyond‐CMOS QCA technology by Marshal Raj, Lakshminarayanan Gopalakrishnan, Seok‐Bum Ko

“…Abstract The rise in complementary metal‐oxide semiconductor (CMOS) limitations has urged the industry to shift its focus towards beyond‐CMOS technologies to stay in race with Moore’s law. …”
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Influence of Air Annealing and Gamma Ray Irradiation on the Optical Properties of Cl16FePc Thin Films by Raji Koshy, C. S. Menon

“…Hexadecacholoro phthalocyanines have attracted interest as possible n-type organic semiconductor with high electron mobility and good stability characteristics. …”
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An Architecture of 2-Dimensional 4-Dot 2-Electron QCA Full Adder and Subtractor with Energy Dissipation Study by Md. Abdullah-Al-Shafi, Ali Newaz Bahar

“…Quantum-dot cellular automata (QCA) is the beginning of novel technology and is capable of an appropriate substitute for orthodox semiconductor transistor technology in the nanoscale extent. …”
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On broadband, linear-phase, flat group delay, all-pole, low-pass filters for high-speed, data communication by Mihai Sanduleanu, Dan Cracan

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Adaptive Sensing Private Property Protection Protocol Based on Cloud by Kai Fan, Wei Wang, Hui Li, Yintang Yang

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Nantenna for Standard 1550 nm Optical Communication Systems by Waleed Tariq Sethi, Hamsakutty Vettikalladi, Habib Fathallah, Mohamed Himdi

“…The detection of light frequency using nanooptical antennas may possibly become a good competitor to the semiconductor based photodetector because of the simplicity of integration, cost, and inherent capability to detect the phase and amplitude instead of power only. …”
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AgGaS₂ and Derivatives: Design, Synthesis, and Optical Properties by Guansheng Xing, Bing Chen

“…Silver gallium sulfide (AgGaS₂) is a ternary A^(I)B^(III)X^(VI)₂-type semiconductor featuring a direct bandgap and high chemical stability. …”
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Electronic Structure and Optical Properties of GaAs Doped with Rare-Earth Elements (Sc, Y, La, Ce, and Pr) by Yongrong Deng, Chunhong Zhang, Xinmao Qin, Wanjun Yan

“…Band structure calculations indicated that the lowest conduction band and highest valence band were evident at the G-point, demonstrating that rare-earth-element doping did not alter the material type of GaAs, which remained a direct-bandgap semiconductor. The bandgap of Sc-doped GaAs increased, whereas those of Y-, La-, Ce-, and Pr-doped GaAs decreased. …”
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The prediction of X2B6 monolayers with ultrahigh carrier mobility by Xiuzhi Du, Zhaoming Huang

“…Interestingly, the K2B6 and Rb2B6 monolayers demonstrate a metallic band structure, while the Na2B6 monolayer is a semiconductor with an ultra-narrow bandgap only about 0.42 eV. …”
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Performance Optimization of Fabricated Nanosheet GAA CMOS Transistors and 6T-SRAM Cells via Source/Drain Doping Engineering by Xuexiang Zhang, Qingkun Li, Lei Cao, Qingzhu Zhang, Renjie Jiang, Peng Wang, Jiaxin Yao, Huaxiang Yin

“…In this paper, special optimizations to source/drain (S/D) doping engineering including spacer bottom footing (SBF) and refining the lightly doped drain (LDD) implantation process are explored to enhance both fabricated complementary metal oxide semiconductor (CMOS) NSFETs and their 6T-SRAM cells. …”
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Near Junction Integration of Vapor Chamber for Transient Thermal Performance Improvements of SiC Power Module by Wei Mu, Laili Wang, Haoyuan Jin, Borong Hu, Binyu Wang, Jinfeng Zhang, Liang Wang, Teng Long

“…Power semiconductor modules are mostly stressed when faced with large junction temperature variations, leading to failures such as bond wire lift-off and solder fatigue. …”
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