Showing 521 - 540 results of 685 for search '"semiconductors"', query time: 0.05s Refine Results
  1. 521

    The study of five-level inverters with various PWM by O. A. Lysenko, A. A. Okhotnikov, V. A. Zakharenko, V. Yu. Kobenko

    Published 2019-12-01
    “…The relevance of the research is indicated by the increasing demands of technological processes for the economic use of electric energy, the reduction in power consumed by semiconductor converters, and also to the level of regulated reactive power. …”
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    Article
  2. 522

    Digital Simulation of Superconductive Memory System Based on Hardware Description Language Modeling by S. Narendran, J. Selvakumar

    Published 2018-01-01
    “…We have modeled a memory system using Josephson Junction to attain low power consumption using low input voltage compared to conventional Complementary Metal Oxide Semiconductor-Static Random Access Memory (CMOS-SRAM). …”
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  3. 523

    Preliminary reduction of chromium ore using Si sludge generated in silicon wafer manufacturing process by Jung W.-G., Back G.-S., Johra F.T., Kim J.-H., Chang Y.-C., Yoo S.-J.

    Published 2018-01-01
    “…In order to promote the recycling of by-product from Si wafer manufacturing process and to develop environment-friend and low cost process for ferrochrome alloy production, a basic study was performed on the preliminary reduction reaction between chromium ore and the Si sludge, comprised of SiC and Si particles, which is recovered from the Si wafer manufacturing process for the semiconductor and solar cell industries. Pellets were first made by mixing chromium ore, Si sludge, and some binders in the designed mixing ratios and were then treated at different temperatures in the 1116°C–1388°C range in an ambient atmosphere. …”
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  4. 524

    Nanoscaled Electrocatalytic Optically Modulated ZnO Nanoparticles through Green Process of Punica granatum L. and Their Antibacterial Activities by Xolile Fuku, Abdoulaye Diallo, Malik Maaza

    Published 2016-01-01
    “…The optical band gap of ZnO NPs was calculated to be 3.48 eV which indicates that ZnO NPs can be used in metal oxide semiconductor-based devices. Further, the nanomaterials were also found to be good inhibitors of bacterial strains at both low and high concentrations of 5–10 mg mL−1.…”
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  5. 525

    Integrating molecular photoswitch memory with nanoscale optoelectronics for neuromorphic computing by David Alcer, Nelia Zaiats, Thomas K. Jensen, Abbey M. Philip, Evripidis Gkanias, Nils Ceberg, Abhijit Das, Vidar Flodgren, Stanley Heinze, Magnus T. Borgström, Barbara Webb, Bo W. Laursen, Anders Mikkelsen

    Published 2025-01-01
    “…Here, we show that donor-acceptor Stenhouse adduct dyes integrated with III-V semiconductor nano-optoelectronics have combined excellent functionality for bio-inspired neural networks. …”
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    Article
  6. 526

    Optimized Control for MMCs with Reduced Power Loss and Extended Lifetime by Jifeng Zhao, Jia Pei, Yun Sun, Rujin Wang, Jun Hang, Shichuan Ding

    Published 2024-01-01
    “…Compared with the conventional power loss optimization control, the proposed control could decrease the maximal power consumption of the semiconductor devices without increasing the total loss of the SM. …”
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    Article
  7. 527

    Sonication-Assisted Synthesis of β-Mercuric Sulfide Nanoparticles by Xin Xu, Elizabeth R. Carraway

    Published 2012-12-01
    “…The nanoscale semiconductor β‐mercuric sulphide (HgS) has promising applications in electronic and optical fields. …”
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    Article
  8. 528

    Developing the quantum-dot single-photon sources with excellent performance by coupling asymmetric microcavity by Xiang You, Yu-Ming He

    Published 2025-01-01
    “…Semiconductor quantum dots (QDs) coupled with optical microcavities provide an excellent platform for generating high-performance single-photon sources. …”
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    Article
  9. 529
  10. 530

    The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET by Junghyeon Hwang, Giuk Kim, Hongrae Joh, Jinho Ahn, Sanghun Jeon

    Published 2024-01-01
    “…Metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FeFETs have significant potential for use in non-volatile memory applications. …”
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    Article
  11. 531

    An Area-Efficient Integrate-and-Fire Neuron Circuit with Enhanced Robustness against Synapse Variability in Hardware Neural Network by Arati Kumari Shah, Kannan Udaya Mohanan, Jisun Park, Hyungsoon Shin, Eou-Sik Cho, Seongjae Cho

    Published 2023-01-01
    “…The proposed neuron circuit is simulated on the 0.35-μm Si complementary metal-oxide-semiconductor technology node by a series of circuit simulations based on HSPICE. …”
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    Article
  12. 532

    A 0.002‐mm2 8‐bit 1‐MS/s low‐power time‐based DAC (T‐DAC) by Ali H. Hassan, Hassan Mostafa, Mohamed Refky, Khaled N. Salama, Ahmed M. Soliman

    Published 2021-11-01
    “…Complementary metal oxide semiconductor technology with a 1 V supply voltage, 1 MS/s conversion rate, and 0.9 μW power dissipation.…”
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  13. 533

    Synthesis and Characterization of Cerium Doped Titanium Catalyst for the Degradation of Nitrobenzene Using Visible Light by Padmini Ellappan, Lima Rose Miranda

    Published 2014-01-01
    “…The metal doped nanoparticles semiconductor catalyst was prepared by sol-sol method with the sol of Cerium. …”
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  14. 534

    Estimate Zinc-Oxide Particles on PMMA Mechanical Properties by Saja Ali Muhsin, Israa Mohammed Hummudi, Makarem A.R. Al-Ani

    Published 2022-06-01
    “…Zinc-oxide (ZnO) powder is widely used in dentistry and is considered a semiconductor material with the radio-opaque property. …”
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  15. 535

    The interaction and photostability of some xanthenes and selected azo sensitizing dyes with TiO2 nanoparticles by D. EL Mekkawi, M. S. A. Abdel-Mottaleb

    Published 2005-01-01
    “…We have tested simple Graetzel-type solar cells using semiconductor thin films consisting of TiO2 nanoparticles and some electron injecting dyes. …”
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    Article
  16. 536

    THE EFFECT OF CRITICAL ELECTRIC FIELDS ON THE ELECTRONIC DISTRIBUTION OF BILAYER ARMCHAIR GRAPHENE NANORIBBONS by Lam Thuy Duong Nguyen, Thi Kim Quyen Nguyen, Nguyen Huu Hanh Pham, Dang Khoa Le, Van Chinh Ngo, Thi Kim Loan Phan, Anh Huy Huynh, Thanh Tra Vu

    Published 2021-12-01
    “…The influence of the parallel electric field is less important in changing the gap size, resulting in the absence of the critical voltage over a very wide range [–1.5 V; 1.5 V] for the semiconductor-insulator group. Nevertheless, it is interesting to note the powerful role of the parallel electric field in modifying the energy band and electronic distribution at each energy level. …”
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  17. 537

    Enhancing Performance of SnO2-Based Dye-Sensitized Solar Cells Using ZnO Passivation Layer by W. M. N. M. B. Wanninayake, K. Premaratne, R. M. G. R. Rajapakse

    Published 2016-01-01
    “…Even though SnO2 shows high election mobility when compared to the semiconductor material commonly used in DSCs, the cell performance of SnO2-based DSCs is considerably low due to high electron recombination. …”
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  18. 538

    Investigation of an Electrochemical Method for Separation of Copper, Indium, and Gallium from Pretreated CIGS Solar Cell Waste Materials by Anna M. K. Gustafsson, Fredrik Björefors, Britt-Marie Steenari, Christian Ekberg

    Published 2015-01-01
    “…Recycling of the semiconductor material copper indium gallium diselenide (CIGS) is important to ensure a future supply of indium and gallium, which are relatively rare and therefore expensive elements. …”
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    Article
  19. 539

    Real-Time Respiratory Monitoring Using a Sparse-Sampled Frequency-Scanning White-Light Interferometry System by Wenyan Liu, Cheng Qian, Kexin Li, Yiping Wang, Xiaoyan Cai, Qiang Liu

    Published 2025-01-01
    “…We propose a novel sparse-sampled white-light interferometry system for respiratory monitoring, utilizing a monolithic integrated semiconductor tunable laser for quasi-continuous frequency scanning across 191.2–196.15 THz at a sampling rate of 5 kHz. …”
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  20. 540

    Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range by Sagnik Kumar, R. Muralidharan, G. Narayanan

    Published 2021-11-01
    “…Realisation of two‐dimensional electron gas‐based Hall sensors on Si substrates can have the advantages of low cost and integrability with complementary metal‐oxide semiconductor circuits. Design and fabrication of such Hall sensors and their characterisation over a wide temperature range of 75 to 500 K are reported. …”
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    Article