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481
Hybrid Josephson Rhombus: A Superconducting Element with Tailored Current-Phase Relation
Published 2025-02-01“…Here, we introduce the hybrid Josephson rhombus, a highly tunable superconducting circuit containing four semiconductor-superconductor hybrid Josephson junctions embedded in a loop. …”
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482
Optical and Morphological Studies of Thermally Evaporated PTCDI-C8 Thin Films for Organic Solar Cell Applications
Published 2013-01-01“…PTCDI-C8 due to its relatively high photosensitivity and high electron mobility has attracted much attention in organic semiconductor devices. In this work, thin films of PTCDI-C8 with different thicknesses were deposited on silicon substrates with native silicon dioxide using a vacuum thermal evaporator. …”
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483
Valency-Based Descriptors for Silicon Carbides, Bismuth(III) Iodide, and Dendrimers in Drug Applications
Published 2020-01-01“…Silicon carbide (SiC), also called carborundum, is a semiconductor containing silicon and carbon. Dendrimers are repetitively branched molecules that are typically symmetric around the core and often adopt a spherical three-dimensional morphology. …”
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484
A Biometric Key Establishment Protocol for Body Area Networks
Published 2011-08-01“…Current advances in semiconductor technology have made it possible to implant a network of biosensors inside the human body for health monitoring. …”
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485
Deadbeat Control of a Modified Single-Phase Five-Level Photovoltaic Inverter with Reduced Number of Switches
Published 2020-01-01“…In this article, a modified single-phase five-level photovoltaic inverter is proposed with a single DC voltage source and six semiconductor switches. Compared with the presented inverters, the introduced topology has the advantage of decreased device count and the first switching frequency for high blocking voltage switches. …”
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486
Effect of Multijunction Approach on Electrical Measurements of Silicon and Germanium Alloy Based Thin-Film Solar Cell Using AMPS-1D
Published 2014-01-01“…Multijunction solar cells designed from silicon (Si)-germanium (Ge) alloy based semiconductor materials exhibit high theoretical efficiencies (19.6%) compared to the single junction one. …”
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487
Enhancing Interpretability of Neural Compact Models: Toward Reliable Device Modeling
Published 2024-01-01“…Despite their efficiency in simulating electronic devices, a significant barrier to the widespread adoption of NCMs in the industry remains: the lack of interpretability. In the semiconductor sector, where inaccuracies or failures can lead to considerable financial consequences, it is critical to ensure that the model’s predictions are both understandable and reliable. …”
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488
All-silicon non-volatile optical memory based on photon avalanche-induced trapping
Published 2025-01-01“…Here, we demonstrate an non-volatile optical memory exclusively using the most common semiconductor material, silicon. By manipulating the photon avalanche effect, we introduce a trapping effect at the silicon-silicon oxide interface, which in turn demonstrates a non-volatile reprogrammable optical memory cell with a record-high 4-bit encoding, robust retention and endurance. …”
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489
Recent Advances of Colossal Magnetoresistance in Versatile La-Ca-Mn-O Material-Based Films
Published 2025-01-01“…Hole-doped manganese oxides exhibit a gigantic negative magnetoresistance, referred to as colossal magnetoresistance (CMR), owing to the interplay between double-exchange (DE) ferromagnetic metal and charge-ordered antiferromagnetic insulator/semiconductor phases. Magnetoresistive manganites display a sharp resistivity drop at the metal–insulator transition temperature (T<sup>MI</sup>). …”
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490
Effective Atomic Number Determination of Rare Earth Oxides with Scattering Intensity Ratio
Published 2013-01-01“…The scattered gamma photons were collected by using a high-resolution HPGe semiconductor detector placed at to the incident beam. …”
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491
Design and optimization of high-contrast gratings for multispectral VCSEL-SOI laser sources
Published 2024-08-01“…A simulation model for spectral characteristics calculation is proposed, which includes two heterogeneously integrated parts of the VCSEL: 1) the lower output mirror based on a HCG grating in the silicon layer of the SOI surrounded by air cavities to enhance the contrast of the HCG; 2) the semiconductor VCSEL structure with an air aperture for current and optical confinement. …”
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492
Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste
Published 2025-01-01“…The third-generation semiconductor silicon carbide (SiC) has attracted widespread attention due to its excellent properties, such as high thermal conductivity, large bandgap, high breakdown field strength, and high saturation electronic drift rate, etc. …”
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493
Bistable Soft Shells for Programmable Mechanical Logic
Published 2025-02-01“…Abstract Mechanical computing promises to integrate semiconductor‐based digital logic in several applications, but it needs straightforward programmable devices for changing computing rules in situ. …”
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494
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495
Stability of GaN HEMT Device Under Static and Dynamic Gate Stress
Published 2024-01-01Get full text
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496
Prospects of Nanobiomaterials for Biosensing
Published 2011-01-01“…This review paper summarizes recent progress in the development of biosensors by integrating functional biomolecules with different types of nanomaterials, including metallic nanoparticles, semiconductor nanoparticles, magnetic nanoparticles, inorganic/organic hybrid, dendrimers, and carbon nanotubes/graphene.…”
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497
Circuit Distortion Analysis Based on the Simplified Newton's Method
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498
Broadband Polarization-Independent Edge Couplers With High Efficiency Based on SiN-Si Dual-Stage Structure
Published 2024-01-01“…Silicon nitride (SiN) plays a critical role in silicon photonics because of its lower refractive index, low waveguide loss, broad operating bandwidth and compatibility with complementary metal oxide semiconductor (CMOS) fabrication process. Here, we propose a polarization-independent sub-wavelength grating (SWG) edge coupler with high efficiency based on SiN-Si dual-stage structure with a length of only 315.8 μm. …”
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499
A fault‐diagnosis and tolerant control technique for five‐level cascaded H‐bridge inverters
Published 2021-07-01“…The consequences of faults increase as the number of power semiconductor devices increases and may lead to serious damage to the overall system. …”
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500
Packed bed optofluidic microreactors with Au decorated TiO2 nanoflowers for visible light photocatalytic water purification
Published 2025-02-01“…Theoretical analysis elucidates the influences of plasmonic effect and reactor configuration on the enhanced photocatalytic activity, emphasizing the potential of integrated optofluidic systems and plasmonic-semiconductor heterostructures for sustainable water treatment and energy applications.…”
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