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421
Design and Analysis of a New High Step-Up Converter Using Switched-Inductor-Capacitor Voltage Multiplier Cells for Photovoltaic Application
Published 2024-01-01“…Also, the mathematical expressions for the design of inductors, capacitors, voltage and current stress of semiconductor devices are provided. The proposed converter is simulated in MATLAB-Simulink and validated the effectiveness of the performance using a laboratory-based Prototype of 250 W at 50 kHz with a 60% duty cycle. …”
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422
Global Existence and Large Time Behavior of Solutions to the Bipolar Nonisentropic Euler-Poisson Equations
Published 2014-01-01“…We study the one-dimensional bipolar nonisentropic Euler-Poisson equations which can model various physical phenomena, such as the propagation of electron and hole in submicron semiconductor devices, the propagation of positive ion and negative ion in plasmas, and the biological transport of ions for channel proteins. …”
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423
Effect of Electrochemical Treatment on Electrical Conductivity of Conical Carbon Nanotubes
Published 2016-01-01“…We assume that these changes can be associated with a decrease in the concentration of charge carriers as a result of hydrogen localization on the carbon π-orbitals, the transition from sp2 to sp3 hybridization of conical CNTs band structure, and, therefore, a metal-semiconductor-insulator transition.…”
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424
Improving radiation tolerance with room temperature annealing of pre-existing defects
Published 2025-01-01“…Pre-existing defects in semiconductor devices can act as nucleation sites for radiation damage. …”
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425
Nanoscale nonlocal thermal transport and thermal field emission in high-current resonant tunnel structures
Published 2025-01-01“…The model applies to vacuum and semiconductor resonant tunnel diode and triode structures with two and three electrodes and to the general case of two-way tunneling with electrode heating. …”
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426
Diverse Role of Silicon Carbide in the Domain of Nanomaterials
Published 2012-01-01“…Despite being an indirect band gap semiconductor, SiC is used in several high-performance electronic and optical devices. …”
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427
Electrochemical Study of Anodized Titanium in Phosphoric Acid
Published 2020-01-01“…Thus, the Mott Schottky model revealed that the formed film is an n-type semiconductor. The density of charge carriers is in good agreement with those found in the literature. …”
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428
Fatigue Life Prediction of the Zirconia Fixture Based on Boundary Element Method
Published 2020-01-01“…Zirconia grinding fixtures have been widely used in semiconductor industry to improve the quality and precision of the products. …”
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429
Fabrication of a Miniature Zinc Aluminum Oxide Nanowire Array Gas Sensor and Application for Environmental Monitoring
Published 2014-01-01“…A miniature n-type semiconductor gas sensor was fabricated successfully using zinc aluminum oxide nanowire array and applied to sense oxygen. …”
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430
Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire
Published 2025-03-01“…Enhancement-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were then fabricated with a gate-recessed process, incorporating a 5 µm gate field plate structure. …”
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431
Investigation of Fe-Doped Graphitic Carbon Nitride-Silver Tungstate as a Ternary Visible Light Active Photocatalyst
Published 2021-01-01“…Graphitic carbon nitride alone or in combination with various other semiconductor metal oxide materials acts as a competent visible light active photocatalyst for the removal of recalcitrant organic pollutants from wastewater. …”
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432
Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays
Published 2025-01-01Get full text
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433
Dynamics of Charge Transients in High Voltage Silicon and SiC NPN BJT Under High Injection Levels
Published 2025-01-01Get full text
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434
Photoactivity of Titanium Dioxide Foams
Published 2018-01-01“…Foam structures seem to be a good means of improving the photoactivity of semiconductor materials and can readily be used for applications such as air purification devices.…”
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435
Correlation between Electrochemical Impedance Spectroscopy and Structural Properties of Amorphous Tunisian Metanacrite Synthetic Material
Published 2014-01-01“…Therefore, by combining ac and dc electrical conductivity, a semiconductor behavior is evidenced. The dependence of the dielectric constant (ε′) and dielectric loss (ε″) on both temperature and frequency is also discussed.…”
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436
Coherent all Optical Reservoir Computing for Equalization of Impairments in Coherent Fiber Optic Communication Systems
Published 2024-01-01“…We compare the performances of the RC systems based on semiconductor saturable absorber mirror (SESAM) and highly nonlinear waveguide (HNLW). …”
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437
n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices
Published 2003-01-01“…The results indicated a positive shift in the value of the flat-band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark-current onset potential and the photo-current open-circuit potential towards more positive values. …”
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438
RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS
Published 2024-03-01“…This is a favorable condition for controlling the conductive state of materials in future applications in the semiconductor and thermoelectric industries. …”
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439
Structural Properties of Liquid SiC during Rapid Solidification
Published 2013-01-01“…The simulated results help understand the structural properties of liquid and amorphous SiC, as well as other similar semiconductor alloys.…”
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440
Structural Mechanisms of Quasi-2D Perovskites for Next-Generation Photovoltaics
Published 2025-02-01Get full text
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