Optimization of retarder parameters for switchable privacy mode automotive displays under asymmetric viewing conditions by Minseo Kang, Hoon-Sub Shin, Jong-Min Baek, Ji-Hoon Lee

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Accelerating materials property prediction via a hybrid Transformer Graph framework that leverages four body interactions by Mohammad Madani, Valentina Lacivita, Yongwoo Shin, Anna Tarakanova

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The effects of initial microstructure on the creep property of a 4th generation single crystal superalloy at mediate temperature and high stress by Huanchang Duan, Yuan Cheng, Xinbao Zhao, Lijie Qiao, Wanshun Xia, Quanzhao Yue, Jiachen Xu, Yuefeng Gu, Ze Zhang

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Effects of Temperature on the Microstructure and Magnetic Property of Cr-Doped ZnO DMS Prepared by Hydrothermal Route Assisted by Pulsed Magnetic Fields by Shiwei Wang, Min Zhong, Cong Liu, Ying Li, Mingyuan Zhu, Hongming Jin, Yemin Hu

“…In the present work, Cr-doped ZnO diluted magnetic semiconductor was synthesized by hydrothermal method under pulsed magnetic fields. …”
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Magnetic field strength gradiometer by R. A. Akhmedzhanov, A. I. Cheredov, A. V. Shchelkanov

“…The paper considers the possibility of constructing a magnetic field strength gradient meter based on the absolute helical instability of electron-hole plasma of a semiconductor sample. The functional scheme of the gradiometer and the results of experimental and theoretical studies of the sensitive element of the gradiometer are presented.…”
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Selective gas detection using composite oxides based on Cox Oy /MnO2–z by Yu. A. Stenkin, D. V. Sokolov

“…The article presents the results of a gas response study of oxide semiconductor layers based on cobalt and manganese oxides CoxOy /MnO2–z with different Co/Mn ratios. …”
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Octagonal Defects at Carbon Nanotube Junctions by W. Jaskólski, M. Pelc, Leonor Chico, A. Ayuela

“…We investigate knee-shaped junctions of semiconductor zigzag carbon nanotubes. Two dissimilar octagons appear at such junctions; one of them can reconstruct into a pair of pentagons. …”
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RECOVERY OF JAPAN'S TRADE BALANCE SURPLUS AS THE ENGINE OF THE ECONOMY GROWTH by D. Shevchenko

“…The general results of the first and second quarters of 2017 have been summed up, which make it possible to talk about the prospects for the growth of the Japanese economy and, most important, highlight the changes in the export structure that are associated with both the restoration of the automotive industry's traffic flow and the dynamics of semiconductor exports, and subsequent consumer demand dynamics implementation of the socio-economic development strategy set by the Government of Japan.…”
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Characteristics of electrical properties of nanocrystalline systems of zinc and cadmium selenides by V. V. Danshina

“…It is shown that the calculated values correlate with the experimental ones, which will make it possible to predict the stability of the operation of semiconductor devices.…”
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Degradation of VDMOSFET by Heavy Ion Irradiations by C. Salame, F. Pelanchon, P. Mialhe

“…This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental observations. …”
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Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth by Jiyao Du, Taofei Pu, Xiaobo Li, Liuan Li, Jinping Ao, Hongwei Gao

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Synergetic Phase Modulation and N‐Doping of MoS2 for Highly Sensitive Flexible NO2 Sensors by Jiyun Kim, Mengyao Li, Chun‐Ho Lin, Long Hu, Tao Wan, Ayad Saeed, Peiyuan Guan, Zijian Feng, Tushar Kumeria, Jianbo Tang, Dawei Su, Tom Wu, Dewei Chu

“…It is found that 2H semiconductor phase with nitrogen doping (N‐doping) in flexible gas sensors constructed with Ag electrodes exhibits the highest sensitivity of ≈2500% toward 10 ppm of NO2. …”
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Theoretical study of the electronic and optical properties of a composite formed by the zeolite NaA and a magnetite cluster by Joel Antúnez-García, Roberto Núñez-González, Vitalii Petranovskii, H’Linh Hmok, Armando Reyes-Serrato, Fabian N. Murrieta-Rico, Mufei Xiao, Jonathan Zamora

“…It is noteworthy that the composite exhibits magnetic properties of a half-semiconductor and a strong optical response within the visible and ultraviolet regions of the spectrum.…”
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Multiple Exciton Generation in Nanostructures for Advanced Photovoltaic Cells by Nicholas Siemons, Alessio Serafini

“…It reports on both semiconductor and carbon structures, both monocomposite (of various dimensionalities) and heterogeneous. …”
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Editorial Special Section on High-Performance Frequency Synthesizers by Salvatore Levantino, Wanghua Wu

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The analytic expressions of sensitivity parameters for fiber-optic refiective system by Vytautas Kleiza, Jonas Verkelis

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Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions by Mykola O. Semenenko, Mykhailo G. Dusheiko, Sergiy V. Mamykin, Valeriy O. Ganus, Mykhailo V. Kirichenko, Roman V. Zaitsev, Mykola M. Kharchenko, N. I. Klyui

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Waste floral foam to nanoporous activated carbon for efficient CO2 capture: An investigation on the property-performance correlation of KOH impregnation by Akshata Pattanshetti, Vidhya Jadhav, Amruta Koli, Miroslaw Kwiatkowski, Radha Kishan Motkuri, Deok-kee Kim, Sandip Sabale

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Epitaxial growth of transition metal nitrides by reactive sputtering by Florian Hörich, Christopher Lüttich, Jona Grümbel, Jürgen Bläsing, Martin Feneberg, Armin Dadgar, Rüdiger Goldhahn, André Strittmatter

“…Implementing transition metal nitride (TM-nitride) layers by epitaxy into group-III nitride semiconductor layer structures may solve substantial persisting problems for electronic and optoelectronic device configurations and subsequently enable new device classes in the favorable nitride semiconductor family. …”
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Application of vanadium dioxide in acoustic logging devices by N. A. Semenyuk, Yu. V. Kuznetsova, Vad. I. Surikov, Val. I. Surikov, А. А. Teploukhov

“…There is change in the electrical properties of the material in the phase transition metal– semiconductor. It is revealed that the value of the electrical resistivity jump at the phase transition is significantly less for the sample, after a series of 50 thermal cycles compared with the original sample.…”
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